Abstract:In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an in-depth perspective of state-of-the-art oxide-based RRAM. The critical voltage and constant reaction energy properties were found, which can be used to prospectively modulate voltage and operation time to control RRAM device working performance and forecast material composition. The quantized switching phenomena in RRAM devices were demonstrated at ultra-cryogenic temperature (4K), which is attributed to the atomic-level reaction in metallic filament. In the aspect of chemical mechanisms, we use the Coulomb Faraday theorem to investigate the chemical reaction equations of RRAM for the first time. We can clearly observe that the first-order reaction series is the basis for chemical reaction during reset process in the study. Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device. As for its materials, silicon oxide is compatible to semiconductor fabrication lines. It is especially promising for the silicon oxide-doped metal technology to be introduced into the industry. Based on that, double-ended graphene oxide-doped silicon oxide based via-structure RRAM with filament self-aligning formation, and self-current limiting operation ability is demonstrated. The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process. Besides, we have also adopted a new concept of supercritical CO2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.

Hydrogen Induced Redox Mechanism in Amorphous Carbon Resistive Random Access Memory

Tri-resistive switching behavior of hydrogen induced resistance random access memory

Resistance Switching Induced by Hydrogen and Oxygen in Diamond-Like Carbon Memristor

High-throughput phase-field simulations and machine learning of resistive switching in resistive random-access memory

Physical and Chemical Mechanisms in Oxide-Based Resistance Random Access Memory.

Molecular Dynamics Study of the Switching Mechanism of Carbon-Based Resistive Memory

Resistive switching behaviors and mechanisms of HfS<sub>2</sub> film memory devices studied by experiments and density functional theory calculations

Anatomy of Resistive Switching Behavior in Titanium Oxide Based RRAM Device

Scaling-down Characteristics of Nanoscale Diamond-Like Carbon Based Resistive Switching Memories

A Resistive Device with Electrolyte As Active Electrode

Conduction mechanism and impedance analysis of HfO x -based RRAM at different resistive states

A physics/circuit-based switching model for carbon-based resistive memory with sp 2/sp 3 cluster conversion

Conduction Mechanism and Impedance Analysis of HfOx-based RRAM at Different Resistive States

Uncorrelated Multiple Conductive Filament Nucleation and Rupture in Ultra-Thin High-Κ Dielectric Based Resistive Random Access Memory

Nonvolatile Resistive Switching in Co Doped Amorphous Carbon Film

Magnetoresistance of conductive filaments in resistive switching Co/HfO 2 /Pt structures

Investigations of Conduction Mechanisms of the Self-Rectifying N+si-Hfo2–ni RRAM Devices

Simultaneous Implementation of Resistive Switching and Rectifying Effects in a Metal-Organic Framework with Switched Hydrogen Bond Pathway.

The Role of Hydrogen in ReRAM

Probing the Critical Region of Conductive Filament in Nanoscale HfO2 Resistive-Switching Device by Random Telegraph Signals

Complementary Resistive Switching Behavior Induced by Varying Forming Current Compliance in Resistance Random Access Memory