Abstract:In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an in-depth perspective of state-of-the-art oxide-based RRAM. The critical voltage and constant reaction energy properties were found, which can be used to prospectively modulate voltage and operation time to control RRAM device working performance and forecast material composition. The quantized switching phenomena in RRAM devices were demonstrated at ultra-cryogenic temperature (4K), which is attributed to the atomic-level reaction in metallic filament. In the aspect of chemical mechanisms, we use the Coulomb Faraday theorem to investigate the chemical reaction equations of RRAM for the first time. We can clearly observe that the first-order reaction series is the basis for chemical reaction during reset process in the study. Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device. As for its materials, silicon oxide is compatible to semiconductor fabrication lines. It is especially promising for the silicon oxide-doped metal technology to be introduced into the industry. Based on that, double-ended graphene oxide-doped silicon oxide based via-structure RRAM with filament self-aligning formation, and self-current limiting operation ability is demonstrated. The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process. Besides, we have also adopted a new concept of supercritical CO2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.

Simultaneous Implementation of Resistive Switching and Rectifying Effects in a Metal-Organic Framework with Switched Hydrogen Bond Pathway.

Resistive Switching Nanodevices Based on Metal–Organic Frameworks

Interface Engineering With Mos2-Pd Nanoparticles Hybrid Structure For A Low Voltage Resistive Switching Memory

High-throughput phase-field simulations and machine learning of resistive switching in resistive random-access memory

Multistate structures in a hydrogen-bonded polycatenation non-covalent organic framework with diverse resistive switching behaviors

Oxide-based RRAM: Unified microscopic principle for both unipolar and bipolar switching

Complementary Metal Oxide Semiconductor Compatible Hf-Based Resistive Random Access Memory with Ultralow Switching Current/Power

Resistive Random Access Memory Cells with a Bilayer TiO2/SiOX Insulating Stack for Simultaneous Filamentary and Distributed Resistive Switching

Physical and Chemical Mechanisms in Oxide-Based Resistance Random Access Memory.

Intramolecular Hydrogen Bonding Interactions Induced Enhancement in Resistive Switching Memory Performance for Covalent Organic Framework‐Based Memristors

Enhancement of Resistive Switching Performance in Hafnium Oxide (HfO2) Devices via Sol-Gel Method Stacking Tri-Layer HfO2/Al-ZnO/HfO2 Structures

Study on Multilevel Resistive Switching Behavior with Tunable ON/OFF Ratio Capability in Forming-Free ZnO QDs-Based RRAM

Modulating Metallic Conductive Filaments Via Bilayer Oxides in Resistive Switching Memory

Optically Mediated Nonvolatile Resistive Memory Device Based on Metal-Organic Frameworks

Nonvolatile and Volatile Resistive Switching Characteristics in MoS2 Thin Film for RRAM Application

Multilevel Resistive Switching With Ionic And Metallic Filaments

Resistive Switching Memory Devices Based on All-inorganic Perovskite CsPbBr3 Quantum Dot

Resistive switching and electrical control of ferromagnetism in a Ag/HfO2/Nb:SrTiO3/Ag resistive random access memory (RRAM) device at room temperature.

Optimization of the Forming Process of HfOx-Based RRAM to Achieve Bidirectional Forming and Enhanced Switching Performance by Inserting an Oxygen-Vacancy-Rich Layer

A novel high-performance and energy-efficient RRAM device with multi-functional conducting nanofilaments

Interface Engineering Via MoS2 Insertion Layer for Improving Resistive Switching of Conductive‐Bridging Random Access Memory