Abstract:Two covalent organic frameworks (COFs) films are prepared to construct resistive‐switching (RS) memory devices. The integration of hydroxyl motifs can improve the RS performance due to intramolecular hydrogen bonding interactions, demonstrating a lower turn‐on voltage and a higher ON/OFF current ratio as well as exceptional high‐temperature endurance and solvent resistance. Covalent organic frameworks (COFs) are promising active mediums for high‐performance data storage devices stemming from their high crystallinity, ordered porous channels, predetermined topology, and rigid architectures, while relative studies are still limited. Here, two COFs (i.e., COF‐EtD and COF‐EtA)‐based resistive‐switching memory devices are proposed to demonstrate the impact of intramolecular hydrogen bonding interactions, both of which exhibit nonvolatile write‐once‐read‐many (WORM) memory characteristics. Comparatively, COF‐EtD with the hydroxyl motif decoration illustrated a lower SET voltage (i.e., turn‐on voltage) and a higher ON/OFF current ratio as well as exceptional high‐temperature endurance and solvent resistance. Mechanism explorations suggest that the resistance‐switching behavior of COF‐EtD may be controlled by the synergistic effect of space‐charge‐limited current and conductive filaments. This finding is the first example of simply varying the functional group of COFs to regulate the WORM resistive switching behavior, providing some inspiration for the advancement of electronic memories and positively contributing to the realization of high endurance and high‐density electric storage materials.

Nonvolatile Resistive Switching in Co Doped Amorphous Carbon Film

Resistive switching in Nb-doped SrZrO3 memory films: An effective approach with a Cu modulation layer

Investigation of Resistive Switching in Graphite-Like Carbon Thin Film for Non-Volatile Memory Applications

The Resistive Switching Memory of CoFe2O4 Thin Film Using Nanoporous Alumina Template

Bipolar resistive switching characteristics of cobalt-doped HfO2-based memory films

Resistive Switching Properties and Physical Mechanism of Cobalt Ferrite Thin Films

Nonvolatile resistive switching in lead-free La2CoMnO6-based memory device

Electroforming Free Controlled Bipolar Resistive Switching in Al/CoFe2O4/FTO device with Self-Compliance Effect

Anisotropic Magnetoresistance of Nano-conductive Filament in Co/HfO2/Pt Resistive Switching Memory

The role of graphitic filaments in resistive switching behaviour of amorphous silicon carbide thin films

An Atomic Switch Using Oxygenated Amorphous Carbon As Solid Electrolyte

Controllable Organic Resistive Switching Achieved by One-Step Integration of Cone-Shaped Contact

Temperature-dependent Resistive Switching of Amorphous Carbon/silicon Heterojunctions

Enhanced Resistive Switching Performance of Spinel MnCo2O4 Resistive Random Access Memory Devices: Effects of Annealing Temperatures and Annealing Atmospheres

Nonpolar Resistive Switching in Cu/SiC/Au Non-Volatile Resistive Memory Devices

Intramolecular Hydrogen Bonding Interactions Induced Enhancement in Resistive Switching Memory Performance for Covalent Organic Framework‐Based Memristors

Hydrogen Induced Redox Mechanism in Amorphous Carbon Resistive Random Access Memory

Resistive Switching Behavior in Diamond-Like Carbon Films Grown by Pulsed Laser Deposition for Resistance Switching Random Access Memory Application

Improved Resistive Switching Performance through Donor-Acceptor Structure Construction in Memristors Based on Covalent Organic Framework Films

Tunable Positive Magnetoresistance Effect of Co-Doped Amorphous Carbon Films

Unipolar Resistive Switching Effect and Mechanism of Solution-Processed Spinel Co3o4 Thin Films