Preparation and characteristics of nanoscale diamond-like carbon films for resistive memory applications
Di Fu,Dan Xie,Chenhui Zhang,Di Zhang,JieBin Niu,He Qian,Litian Liu,富迪,谢丹,张晨辉,张笛,牛洁斌,钱鹤,刘理天
DOI: https://doi.org/10.1088/0256-307X/27/9/098102
2010-01-01
Chinese Physics Letters
Abstract:We propose diamond-like carbon (DLC) as the resistance change material for nonvolatile memory applications. Nanoscale DLC films are prepared by filtered cathodic vacuum arc technique and integrated to W/DLC/W structure devices. The deposited DLC film has a thickness of about 20 nm and high sp(3) fraction content. Reversible bistable resistive switching from a high resistance state to a low resistance state, and vice versa, is observed under appropriate unipolar stimulation pulses. High resistance switching ratio (larger than a thousand times) and low level of switching power (about 11 mu W) are demonstrated. We propose that the mechanism of the repetitive resistive switching is the growth and breakage of conductive sp(2)-like filaments in the predominantly sp(3)-type insulating carbon upon applications of voltage pulses, which is consistent with the experimental results.