Abstract:An ideal thermoelectric material would be a semiconductor with high electrical conductivity and relatively low thermal conductivity: an "electron crystal, phonon glass". Introducing nanoscale heterostructures into the bulk TE matrix is one way of achieving this intuitively anomalous electron/phonon transport behavior. The heterostructured interfaces are expected to play a significant role in phonon scattering to reduce thermal conductivity and in the energy-dependent scattering of electrical carriers to improve the Seebeck coefficient. A nanoparticle building block assembly approach is plausible to fabricate three-dimensional heterostructured materials on a bulk commercial scale. However, a key problem in applying this strategy is the possible negative impact on TE performance of organic residue from the nanoparticle capping ligands. Herein, we report a wet chemical, surfactant-free, low-temperature, and easily up-scalable strategy for the synthesis of nanoscale heterophase Bi(2)Te(3)-Te via a galvanic replacement reaction. The micro-nano heterostructured material is fabricated bottom-up, by mixing the heterophase with commercial Bi(2)Te(3). This unique structure shows an enhanced zT value of ∼0.4 at room temperature. This heterostructure has one of the highest figures of merit among bismuth telluride systems yet achieved by a wet chemical bottom-up assembly. In addition, it shows a 40% enhancement of the figure of merit over our lab-made material without nanoscale heterostructures. This enhancement is mainly due to the decrease in the thermal conductivity while maintaining the power factor. Overall, this cost-efficient and room-temperature synthesis methodology provides the potential for further improvement and large-scale thermoelectric applications.

Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency

High Thermoelectric Performance of a Sc2Si2Te6 Monolayer at Medium Temperatures: an Ab Initio Study.

Heterostructured Approaches to Efficient Thermoelectric Materials

Dual Alloying Enables High Thermoelectric Performance in AgSbTe2 by Manipulating Carrier Transport Behavior

Bottom-Up Metal/Oxide/Bi2Te3 Heterostructures for Enhanced Thermoelectric Properties

Significantly improved thermoelectric performance of Ag-doped Bi0.5Sb1.5Te3 films deriving from high-efficient carrier filtering effect

2D Bi2Te3/Si heterostructure with high thermoelectric power factor enabled by interface regulated carrier injection

Engineering of charge carriers via a two-dimensional heterostructure to enhance the thermoelectric figure of merit.

High Thermoelectric Performance of All-Oxide Heterostructures with Carrier Double-Barrier Filtering Effect

Enhanced Thermopower Via Carrier Energy Filtering in Solution-Processable Pt-Sb2te3 Nanocomposites

Synergistic modulation of mobility and thermal conductivity in (Bi,Sb)2Te3 towards high thermoelectric performance

Surfactant-free Synthesis of Bi2Te3-Te Micro-Nano Heterostructure with Enhanced Thermoelectric Figure of Merit.

Melt-Centrifuged (bi,sb)2 Te3 : Engineering Microstructure Toward High Thermoelectric Efficiency.

Synergistic Strategy Via Modulated Energy Filtering and Hierarchical Defects Evolution for High Performance Gete Thermoelectrics

Achieving high thermoelectric performance through carrier concentration optimization and energy filtering in Cu3SbSe4-based materials

Scattering Mechanisms and Compositional Optimization of High‐Performance Elemental Te as a Thermoelectric Material

High‐Performance Industrial‐Grade p‐Type (Bi,Sb)2Te3 Thermoelectric Enabled by a Stepwise Optimization Strategy

Excellent thermoelectric performance of ZrTe2 thin films and device

Bottom-Up (Cu, Ag, Au)/Al<sub>2</sub>O<sub>3</sub>/Bi<sub>2</sub>Te<sub>3</sub> Assembled Thermoelectric Heterostructures

High Thermoelectric Conversion Efficiency of MgAgSb-based Material with Hot-Pressed Contacts

Synergistic Texturing and Bi/Sb‐Te Antisite Doping Secure High Thermoelectric Performance in Bi 0.5 Sb 1.5 Te 3 ‐Based Thin Films