Abstract:Modulation of the microstructure and configurational entropy tuning are the core stratagem for improving thermoelectric performance. However, the correlation of evolution among the preparation methods, chemical composition, structural defects, configurational entropy, and thermoelectric properties is still unclear. Herein, two series of AgSbTe2-based compounds were synthesized by an equilibrium melting-slow-cooling method and a nonequilibrium melting-quenching-spark plasma sintering (SPS) method, respectively. The equilibrium method results in coarse grains with a size of >300 μm in the samples and a lower defect concentration, leading to higher carrier mobility of 10.66 cm2 V-1 s-1 for (Ag2Te)0.41(Sb2Te3)0.59 compared to the sample synthesized by nonequilibrium preparation of 1.83 cm2 V-1 s-1. Moreover, tuning the chemical composition of nonstoichiometric AgSbTe2 effectively improves the configurational entropy and creates a large number of cation vacancies, which evolve into dense dislocations in the samples. Owing to all of these in conjunction with the strong inharmonic vibration of lattice, an ultralow thermal conductivity of 0.51 W m-1 K-1 at room temperature is achieved for the (Ag2Te)0.42(Sb2Te3)0.58 sample synthesized by the equilibrium preparation method. Due to the enhanced carrier mobility, optimized carrier concentration, and low thermal conductivity, the (Ag2Te)0.42(Sb2Te3)0.58 sample synthesized by the equilibrium preparation method possesses the highest ZT of 1.04 at 500 K, more than 60% higher than 0.64 at 500 K of the same composition synthesized by nonequilibrium preparation.

Scattering Mechanisms and Compositional Optimization of High‐Performance Elemental Te as a Thermoelectric Material

Enhancing the average thermoelectric figure of merit of elemental Te by suppressing grain boundary scattering

Mid-temperature Thermoelectric Performance of Zone-Melted Sb2(Te,Se)3 Alloys Near Phase Transition Boundary

Strong lattice anharmonicity securing intrinsically low lattice thermal conductivity and high performance thermoelectric SnSb2Te4 via Se alloying

High Thermoelectric Performance Via Hierarchical Compositionally Alloyed Nanostructures.

Compositional Fluctuations Locked by Athermal Transformation Yielding High Thermoelectric Performance in GeTe

Boosting thermoelectric performance of SnTe by selective alloying and band tuning

Band convergence and nanostructure modulations lead to high thermoelectric performance in SnPb0.04Te-y% AgSbTe2

High-Performance SnTe Thermoelectric Materials Enabled by the Synergy of Band Convergence and Phonon Scattering

Enhancing Thermoelectric Performance of AgSbTe 2 -Based Compounds via Microstructure Modulation Combining with Entropy Engineering

Valence Band Modification and Enhanced Phonon‐Phonon Interactions for High Thermoelectric Performance in GeTe

Functionally Separated Electronic Band Engineering Via Multi-Element Doping Plus High-Density Defects Advances Board-Temperature-range Thermoelectric Performance in GeTe

Modifying Roles of CuSbSe2 in Realizing High Thermoelectric Performance of GeTe

Enhanced Thermoelectric Performance of P‐Type (Bi,Sb)2Te3 by Incorporating Non‐Stoichiometric Ag5Te3 and Refining Te‐Se Ratio

Realizing high thermoelectric performance in Te nanocomposite through Sb2Te3 incorporation

Achieving Superior Thermoelectric Performance in Ge4Se3Te Via Symmetry Manipulation with I–V–VI2 Alloying

Simultaneous Optimization of Carrier Concentration and Alloy Scattering for Ultrahigh Performance GeTe Thermoelectrics

High‐Performance Industrial‐Grade p‐Type (Bi,Sb)2Te3 Thermoelectric Enabled by a Stepwise Optimization Strategy

Realizing High Thermoelectric Performance in GeTe‐Based Supersaturated Solid Solutions

Enhancing the Thermoelectric Performance of GeSb4Te7 Compounds via Alloying Se

Realizing High Thermoelectric Performance in Cu2Te Alloyed Cu1.15In2.29Te4