Bottom-Up (Cu, Ag, Au)/Al2O3/Bi2Te3 Assembled Thermoelectric Heterostructures

Zhenhua Wu,Shuai Zhang,Zekun Liu,Cheng Lu,Zhiyu Hu

DOI: https://doi.org/10.3390/mi12050480

IF: 3.4

2021-04-22

Micromachines

Abstract:The interface affects the transmission behavior of electrons and phonons, which in turn determines the performance of thermoelectric materials. In this paper, metals (Cu, Ag, Au)/Al2O3/Bi2Te3 heterostructures have been fabricated from bottom to up to optimize the thermoelectric power factor. The introducing metals can be alloyed with Bi2Te3 or form interstitials or dopants to adjust the carrier concentration and mobility. In addition, the metal-semiconductor interface as well as the metal-insulator-semiconductor interface constructed by the introduced metal and Al2O3 would further participate in the regulation of the carrier transport process. By adjusting the metal and oxide layer, it is possible to realize the simultaneous optimization of electric conductivity and Seebeck coefficient. This work will enable the optimal and novel design of heterostructures for thermoelectric materials with further improved performance.

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied

What problem does this paper attempt to address?

The paper aims to address the issue of optimizing the performance of thermoelectric materials, particularly by constructing (Cu, Ag, Au)/Al₂O₃/Bi₂Te₃ heterostructures to enhance thermoelectric performance. Specifically, the researchers attempt to optimize the thermoelectric power factor by introducing metal layers and oxide layers to adjust carrier concentration and mobility. Additionally, these interfaces can scatter phonons, reducing lattice thermal conductivity and further improving the overall thermoelectric performance of the material.

The main contributions of the paper are:
1. **Interface Effects**: By constructing metal-semiconductor (MS) and metal-insulator-semiconductor (MIS) interfaces, the carrier concentration and mobility are synergistically regulated through the carrier filtering effect or tunneling electron control at the interfaces.
2. **Performance Enhancement**: Experimental results show that the thermoelectric power factor of the Cu/Al₂O₃/Bi₂Te₃ heterostructure reached 6.5 µW·cm⁻¹·K⁻², which is 1.75 times that of the pure Bi₂Te₃ film.
3. **Future Prospects**: Future work will focus on optimizing the size of metal particles, the thickness of the oxide layer, and the annealing process to further enhance thermoelectric performance.

In summary, this paper systematically introduces metal and oxide layers to explore how interface engineering can optimize the performance of thermoelectric materials, providing new ideas and methods for developing high-performance thermoelectric materials.