Abstract:Nonlinear silicon photonics has been an immense research subject in the past several years with promising prospects of delivering chip scale signal modulation, shaping and characterization tools. In particular, broadband parametric process has been considered for applications ranging from wideband light amplifiers to signal characterization and signal shaping tools. Although underlying nonlinear effect, Kerr phenomena, in silicon has generated promising result of wavelength conversion, the success of these devices have been challenged by the presence of nonlinear losses such as two photon absorption and the two photon generated free carrier absorption. Experimental demonstrations were limited to conversion efficiencies below -10dB. Here, we present the prospect of ultra wide discrete band conversion schemes and the prospect of parametric process at mid-infrared wavelengths where nonlinear losses are not present. In particular, we explore the parametric wavelength conversion scheme at mid-wave infrared wavelength (2 mu m similar to 6 mu m) by four-wave-fixing process in silicon waveguides with new cladding materials, such as sapphire, that can provide transparency up to 6 mu m and facilitate phase matching condition for discrete wavelength bands as far as 60THz away from each other. Design criteria include the optimization of mode overlap integrals and dispersion engineering for an ultra-wide band signals. The particular results of wavelength conversion between 2 mu m bands and 5 mu m bands, and between 1.8 mu m bands and >4 mu m bands will be presented. Prospects of frequency band conversion in generation of new infrared signals and low noise, room temperature detection of mid-infrared signals will also be discussed.

Process Variation in Silicon Photonic Devices.

Post-Processing Trimming of Silicon Photonic Devices Using Femtosecond Laser.

Experimental Analysis of Adiabatic Silicon Photonic Microring Resonators Under Process Variations

Study of Silicon Photonics Based on Standard CMOS Foundry

Passive Devices at 2 Μm Wavelength on 200 Mm CMOS-compatible Silicon Photonics Platform [Invited]

Development of Silicon Photonic Devices for Optical Interconnects

Parameter Extraction from Fabricated Silicon Photonic Devices

Silicon-based CMOS Photonic Devices Using Carrier Dispersion Effect

Process Variation-Aware Compact Model of Strip Waveguides for Photonic Circuit Simulation

Modeling and Characterization of Tunable Photonic Crystal Waveguides Based on Two-Dimensional Periodic Arrays of Silicon Pillars

In-Situ Study of Dynamics of Refractive Index Changes in Silicon Devices Induced by UV-light Irradiation

Transfer printing micro-assembly of silicon photonic crystal cavity arrays: beating the fabrication tolerance limit

Optical Signal Processing in SOI Waveguide Devices

Signal Processing in Silicon Waveguides

Silicon-based Ultra-Wide Discrete Band Conversion

Impact of Nonlinear Effects on the Silicon-Based Waveguides and Microring Resonators

High-Q and High-Order Side-Coupled Air-Mode Nanobeam Photonic Crystal Cavities in Silicon

Reliability-Aware Design Flow for Silicon Photonics On-Chip Interconnect

Optical and geometric parameter extraction across 300-mm photonic integrated circuit wafers

Tailoring Patterned Visible-Light Scattering by Silicon Photonic Crystals

Direct Fabrication Of Silicon Photonic Devices On A Flexible Platform And Its Application For Strain Sensing