Abstract:The thermal transport properties of nanowires can be significantly influenced by the implementation of a core-shell structure, which introduces interface scattering and phonon localization effects, opening avenues for novel applications. In this paper, we use the method of non-equilibrium molecular dynamics to simulate the effects of system temperature, cross-sectional width, and nanopillar inter-face on the thermal transport of GaN/Si3N4 core-shell nanowires. The thermal transport process ofphonons in core-shell nanowires is studied by calculating the vibrational density of states, phonon participation rate and dispersion curve. The results show that the core-shell nanowires characterized by smooth interfaces exhibit a 17.4% decrease in thermal conductivity at room temperature when contrasted with pristine GaN nanowires. In addition, the thermal conductivity of pristine GaN increases monotonically with the cross-sectional width, while the core-shell nanowires exhibit a phenomenon of initially decreasing and then increasing. The thermal conductivity of core-shell nanowires decreases by 23% due to the inclusion of nanopillars at the interface. The presence of nano-pillars increases phonon-surface scattering intensity at low frequency and modifies phonon dispersion to decrease the group velocity. The hybridization of phonon modes between those of the nanopillars and the Si3N4 shell gives rise to numerous dispersionless resonance phonon modes that span the entire phonon spectrum. These results suggest that controlling the long-wavelength phonon modes at the interface and leveraging the resonance of nanopillars can reduce the thermal conductivity of GaN/Si3N4 core-shell nanowires, so that the heat transfer can be effectively adjusted.

Enhanced minority carrier lifetimes in GaAs/AlGaAs core-shell nanowires through shell growth optimization.

Improvement of minority carrier lifetime in GaAs/AlxGa1−xAs core-shell nanowires

Long Minority Carrier Lifetime In Au-Catalyzed Gaas/Alxga1-Xas Core-Shell Nanowires

Carrier Lifetime and Mobility Enhancement in Nearly Defect-Free Core-Shell Nanowires Measured Using Time-Resolved Terahertz Spectroscopy.

High Performance Gaas/Algaas Radial Heterostructure Nanowires Grown By Mocvd

Determination of the optimal shell thickness for self-catalysed GaAs/AlGaAs core-shell nanowires

Self-Seeded MOCVD Growth and Dramatically Enhanced Photoluminescence of InGaAs/InP Core–Shell Nanowires

Electron mobilities approaching bulk limits in "surface-free" GaAs nanowires.

Nearly Intrinsic Exciton Lifetimes in Single Twin-Free Gaas/Algaas Core-Shell Nanowire Heterostructures

Strongly enhanced minority lifetimes in single silicon nanowires by surface passivation

Studies on Carrier Recombination in GaN/AlN Quantum Dots in Nanowires with a Core–Shell Structure

Exciton dynamics in GaAs/(Al,Ga)As core-shell nanowires with shell quantum dots

Growth, Structural and Optical Properties of GaAs/AlGaAs Core/Shell Nanowires with and without Quantum Well Shells

Enhancement of Radiation Tolerance in GaAs/AlGaAs Core-Shell and InP Nanowires

Tailoring thermal transport and confinement effect ofGaN/Si3N4nanowires utilizing core-shell architecture

Influence of Auger heating and Shockley-Read-Hall recombination on hot carrier dynamics in InGaAs nanowires

Influence of Fabrication Processes and Annealing Treatment on the Minority Carrier Lifetime of Silicon Nanowire Films

Improved minority carrier lifetime in p-type GaN by suppressing the non-radiative recombination process

Investigation on minority carrier lifetime, diffusion length and recombination mechanism of Mg-doped GaN grown by MOCVD

Defect-Free GaAs/AlGaAs Core–Shell Nanowires on Si Substrates

Modulation doping of GaAs/AlGaAs core-shell nanowires with effective defect passivation and high electron mobility