Abstract:Achieving bulk-like charge carrier mobilities in semiconductor nanowires is a major challenge facing the development of nanowire based electronic devices. Here we demonstrate that engineering the GaAs nanowire surface by overcoating with opitimized AlGaAs shells is an effective means of obtaining exceptionally high carrier mobilities and lifetimes. We performed measurments of GaAs/AlGaAs core-shell nanowires using optical pump-terahertz probe spectroscopy: a noncontact and accurate probe of carrier transport on ultrafast time scales. The carrier lifetimes and mobilities both improved significantly with increasing AlGaAs shell thickness. Remarkably, optimized GaAs/AlGaAs core-shell nanowires exhibited electron mobilities up to 3000 cm(2) V-1 s(-1), reaching over 65% of the electron mobility typical of high quality undoped bulk GaAs at equivalent photoexcited carrier densities. This points to the high interface quality and the very low levels of ionized impurities and lattice defects in these nanowires. The improvement in mobility were concomitant with drastic improvemtnts in photoconductivity lifetime, raching 1.6 ns. Comparison of photoconductivity and photoluminscence dynamics indicates that midgap GaAs surface states, and consequently surface band-bending and depletion, are effectively eliminated in these high quality heterostructures.

High Performance Gaas/Algaas Radial Heterostructure Nanowires Grown By Mocvd

Long Minority Carrier Lifetime In Au-Catalyzed Gaas/Alxga1-Xas Core-Shell Nanowires

Growth, Structural and Optical Properties of GaAs/AlGaAs Core/Shell Nanowires with and without Quantum Well Shells

Electron mobilities approaching bulk limits in "surface-free" GaAs nanowires.

High Efficiency Ultraviolet Emission from AlxGa1−xN Core-Shell Nanowire Heterostructures Grown on Si (111) by Molecular Beam Epitaxy

Growth of Zinc Blende Gaas/Algaas Radial Heterostructure Nanowires by A Two-Temperature Process

Enhanced minority carrier lifetimes in GaAs/AlGaAs core-shell nanowires through shell growth optimization.

Improvement of minority carrier lifetime in GaAs/AlxGa1−xAs core-shell nanowires

Growth and Properties of III–V Compound Semiconductor Heterostructure Nanowires

Nearly Intrinsic Exciton Lifetimes in Single Twin-Free Gaas/Algaas Core-Shell Nanowire Heterostructures

Optical properties of single InP and GaAs nanowire heterostructures

Self-Seeded MOCVD Growth and Dramatically Enhanced Photoluminescence of InGaAs/InP Core–Shell Nanowires

Structural and Optical Properties of Axial and Radial Heterostructure Ill-V Nanowires Grown by Metalorganic Chemical Vapour Deposition

Growth, Structural and Optical Properties of GaAs, InGaAs and AlGaAs Nanowires and Nanowire Heterostructures

Carrier Lifetime and Mobility Enhancement in Nearly Defect-Free Core-Shell Nanowires Measured Using Time-Resolved Terahertz Spectroscopy.

Multi-Colour Emission From Gaas Core-Algaas Shell Photonic Nanowires

Growth of III-V Nanowires and Nanowire Heterostructures by Metalorganic Chemical Vapor Deposition

Ultrafast Dynamics of Exciton Formation in Semiconductor Nanowires

Self-Catalyzed AlGaAs Nanowires and AlGaAs/GaAs Nanowire-Quantum Dots on Si Substrates

Optical, structural, and numerical investigations of GaAs/AlGaAs core-multishell nanowire quantum well tubes

Studies on Carrier Recombination in GaN/AlN Quantum Dots in Nanowires with a Core–Shell Structure