Abstract:This study presents a colloidal synthesis method to produce thermoelectric Cu3SbSe4 nanocrystals with high yield. Pb doping is employed to increase carrier concentration and effective mass, confirmed by experimental studies and theoretical calculations. Additionally, lattice distortions and other intriguing nanostructures are found to significantly reduce thermal conductivity. Consequently, the thermoelectric figure of merit zT is greatly enhanced. Developing cost‐effective and high‐performance thermoelectric (TE) materials to assemble efficient TE devices presents a multitude of challenges and opportunities. Cu3SbSe4 is a promising p‐type TE material based on relatively earth abundant elements. However, the challenge lies in its poor electrical conductivity. Herein, an efficient and scalable solution‐based approach is developed to synthesize high‐quality Cu3SbSe4 nanocrystals doped with Pb at the Sb site. After ligand displacement and annealing treatments, the dried powders are consolidated into dense pellets, and their TE properties are investigated. Pb doping effectively increases the charge carrier concentration, resulting in a significant increase in electrical conductivity, while the Seebeck coefficients remain consistently high. The calculated band structure shows that Pb doping induces band convergence, thereby increasing the effective mass. Furthermore, the large ionic radius of Pb2+ results in the generation of additional point and plane defects and interphases, dramatically enhancing phonon scattering, which significantly decreases the lattice thermal conductivity at high temperatures. Overall, a maximum figure of merit (zTmax) ≈ 0.85 at 653 K is obtained in Cu3Sb0.97Pb0.03Se4. This represents a 1.6‐fold increase compared to the undoped sample and exceeds most doped Cu3SbSe4‐based materials produced by solid‐state, demonstrating advantages of versatility and cost‐effectiveness using a solution‐based technology.

Study of the Thermoelectric Properties of Lead Selenide Doped with Boron, Gallium, Indium, or Thallium.

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Enhanced Thermoelectric Performance of PbSe Co-Doped with Ag and Sb

Thermoelectric properties of n-type transition metal-doped PbSe

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Band Structure Engineering of Bi<sub>4</sub>O<sub>4</sub>SeCl<sub>2</sub> for Thermoelectric Applications

Electronic Structures and Thermoelectric Properties of (ag, Te), (sn, Te) and (sb, Te) Dually Doped PbSe on Cationic and Anionic Sites

Study on the Effect of Sn, In, and Se Co-Doping on the Thermoelectric Properties of GeTe

Modulating the Valence of Ga and the Deep Level Impurity for High Thermoelectric Performance of N-Type Pb0.98Ga0.02Te1-xSex Compounds

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Enhancement of thermoelectric performance in n-type PbTe1-ySey by doping Cr and tuning Te:Se ratio

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Preparation of Heavily Doped P-Type PbSe with High Thermoelectric Performance by the NaCl Salt-Assisted Approach

Band Engineering Through Pb‐Doping of Nanocrystal Building Blocks to Enhance Thermoelectric Performance in Cu3SbSe4

Ag, Pb co-doped SnSe high performance thermoelectric materials

Boosting the Thermoelectric Performance of PbSe from the Band Convergence Driven By Spin‐Orbit Coupling

High Thermoelectric Properties for Sn-doped AgSbSe 2