High-Performance Transistors by Design

Xiaojun Guo,S. R. P. Silva

DOI: https://doi.org/10.1126/science.1156327

IF: 56.9

2008-01-01

Science

Abstract:For large-area electronics, a redesign of the transistor structure can provide improved performance.

What problem does this paper attempt to address?

New structure transistors for advanced technology node CMOS ICs

Qingzhu Zhang,Yongkui Zhang,Yanna Luo,Huaxiang Yin

DOI: https://doi.org/10.1093/nsr/nwae008

IF: 20.6

2024-01-05

National Science Review

Abstract:ABSTRACT Over recent decades, advancements in complementary metal-oxide-semiconductor integrated circuits (ICs) have mainly relied on structural innovations in transistors. From planar transistors to the fin field-effect transistor (FinFET) and gate-all-around FET (GAAFET), more gate electrodes have been added to three-dimensional (3D) channels with enhanced control and carrier conductance to provide higher electrostatic integrity and higher operating currents within the same device footprint. Beyond the 1-nm node, Moore’s law scaling is no longer expected to be applicable to geometrical shrinkage. Vertical transistor stacking, e.g. in complementary FETs (CFET), 3D stack (3DS) FETs and vertical-channel transistors (VFET), for enhanced density and variable circuit or system design represents a revolutionary scaling approach for sustained IC development. Herein, innovative works on specific structures, key process breakthroughs, shrinking cell sizes and design methodologies for transistor structure research and development are reviewed. Perspectives on future innovations in advanced transistors with new channel materials and operating theories are also discussed.

multidisciplinary sciences
The Optimization and Fabrication of High Electron Mobility Transistors Integrated with Microstructure

Weili Shi,Chenyang Xue,Zhenxin Tan,Xuedong Tian,Jianjun Tang,Jun Liu,Jijun Xiong

DOI: https://doi.org/10.1177/1740349912442859

2012-01-01

Abstract:In this paper, trench-gate high electron mobility transistors, which have three channel directions with micro-cantilevers, have been design and fabricated. The action of the trench-gate direction on the sensitivity of the microstructure has been considered based on high electron mobility transistors as sensitive units which are located at the root of the micro-cantilever. The microstructure has been fabricated by using the process of dry and wet etching a GaAs substrate. Through selecting suitable material and appropriate mask layout, the high electron mobility transistors have been protected as sensitive units.
High Performance Tunnel Field Effect Transistor with a Tri-Material-gate Structure

Renrong Liang,Ning Cui,Mei Zhao,Wang, Jing

DOI: https://doi.org/10.1109/isdrs.2011.6135375

2011-01-01

Abstract:Recently tunnel field effect transistors (TFETs) have been extensively investigated due to the ability to suppress the short channel effects [1]. However, certain drawbacks of the TFET device, particularly its high average subthreshold swing (SS) and low on-state current, hamper the device's performance [2]. Another problem with TFETs is that they exhibit ambipolar behavior, which leads to high Ioff current [3]. To improve these characteristics simultaneously, we developed a novel TFET design with a tri-material-gate (TMG), and its properties were analyzed by numerical simulations.
How Materials and Device Factors Determine the Performance: A Unified Solution for Transistors with Nontrivial Gates and Transistor-Diode Hybrid Integration

Chuan Liu,Xiaojie Li,Yiyang Luo,Ya Wang,Sujuan Hu,Chenning Liu,Xiaoci Liang,Hang Zhou,Jun Chen,Juncong She,Shaozhi Deng

DOI: https://doi.org/10.1002/advs.202104896

2022-01-01

Abstract:Advanced field-effect transistors (FETs) with nontrivial gates (e.g., offset-gates, mid-gates, split-gates, or multi-gates) or hybrid integrations (e.g., with diodes, photodetectors, or field-emitters) have been extensively developed in pursuit for the "More-than-Moore" demand. But understanding their conduction mechanisms and predicting current-voltage relations is rather difficult due to countless combinations of materials and device factors. Here, it is shown that they could be understood within the same physical picture, i.e., charge transport from gated to nongated semiconductors. One proposes an indicator based on material and device factors for characterizing the transport and derives a unified and simplified solution for describing the current-voltage relations, current saturation, channel potentials, and drift field. It is verified by simulations and experiments of different types of devices with varied materials and device factors, employing organic, oxide, nanomaterial semiconductors in transistors or hybrid integrations. The concise and unified solution provides general rules for quick understanding and designing of these complex, innovative devices.
A Low Cost & High Performance PNP Transistor Design & Fabrication in SiGe BiCMOS

Donghua Liu,Jing Shi,Jun Hu,Wenting Duan,Pengliang Ci,Jia Pan,Fan Chen,Xiongbin Chen,Jingfeng Huang,Wensheng Qian,Xiangming Xu,Sheng'An Xiao,Tungyuan Chu

DOI: https://doi.org/10.1149/05201.0023ecst

2012-01-01

Abstract:The study and design of a low cost and high performance vertical PNP transistor at BiCMOS process platform is presented. The effect of different device designs on baseline process has been compared in terms of their electrics characteristics simulation result. The performance of PNP has been improved further through process optimization with the aid of process simulation. The fabricated PNP transistor silicon data shows consistent performance with simulation. Finally the performance of PNP device has met the target including current gain above 38, breakdown voltage (BV CEO) over 7 volts and cut-off frequency (f T) 10GHz. Its performance addresses the requirement for high speed circuit design.
Research Progress in Ge-based Advanced Field Effect Transistor Technology

Yi ZHAO,Zejie ZHENG,Junkang LI

DOI: https://doi.org/10.1360/ssi-2019-0207

2020-01-01

Abstract:The modern integrated circuit is among the worlds mostcomplex systems, but at its heart is a very simple, and we think beautiful,device: the transistor. Right now, 7 nm process technology is the cutting edge in traditional silicon-based integrated-circuit-manufacturing industry. However,the downscaling of the technological node in accordance with Moores Law is becomingincreasingly difficult, not to mention fantastically expensive. Ge has beenconsidered a promising channel material due its high hole andelectron motilities, which facilitate the drive-current boost withoutdownscaling the devices dimensions. This paper summaries the current state-of-the-art Gemetal-oxide-semiconductor field-effect transistors (MOSFETs) from these three angles: gate stacks, source/drainformation, and new device structure. It is found that many criticalphysical and engineering problems concerning Ge MOSFETs are still under discussion, including basic device fabrication and the deep physicalunderstanding of Ge MOSFETs. Nevertheless, Ge MOSFETs reported by bothacademic and industrial researchers show superior performance totraditional Si MOSFETs, suggesting that Ge is a promising material for future high-performance complementary-MOS (CMOS) devices under 3 nm node.
High-Performance Dual-Gate Transistors Based on Aligned Carbon Nanotubes

Jinshuai Lv,Zizhuo Shen,Dehuan Meng,Lian-Mao Peng,Chenguang Qiu

DOI: https://doi.org/10.1021/acsami.4c12453

IF: 9.5

2024-10-16

ACS Applied Materials & Interfaces

Abstract:Aligned carbon nanotubes (A-CNTs), with atomic-scale thickness and ultrahigh carrier mobility, hold promise for constructing future sub-1 nm node integrated circuits (ICs) with higher speed and lower power consumption. However, the fabricated A-CNT transistors often suffer from the disorder of high-density CNT, which degrade the off-characteristic deviating significantly from theoretical values. Introducing a dual-gate (DG) configuration can provide higher gate control efficiency compared to...

materials science, multidisciplinary,nanoscience & nanotechnology
Nanomaterials in transistors: From high-performance to thin-film applications

Aaron D Franklin,Aaron D. Franklin

DOI: https://doi.org/10.1126/science.aab2750

IF: 56.9

2015-08-14

Science

Abstract:Improving transistors with nanomaterials High-performance silicon transistors and thin-film transistors used in display technologies are fundamentally limited to miniaturization. Incorporating nanomaterials—such as carbon nanotubes, graphene, and related two-dimensional materials like molybdenum disulfide—into these devices as gate materials may circumvent some of these limitations. Franklin reviews the opportunities and challenges for incorporating nanomaterials into transistors to improve performance. Because high-performance transistors are distinct from thin-film transistors, incorporating them into flexible or transparent platforms raises new challenges. Science , this issue 10.1126/science.aab2750

multidisciplinary sciences
Small Feature‐Size Transistors Based on Low‐Dimensional Materials: From Structure Design to Nanofabrication Techniques

Xiaqing Fu,Zhifang Liu,Huaipeng Wang,Dan Xie,Yilin Sun

DOI: https://doi.org/10.1002/advs.202400500

IF: 15.1

2024-06-19

Advanced Science

Abstract:With the unique device structures and the development of 2D materials, many transistors with ultrasmall feature‐sizes are successfully fabricated. This review summarizes the novel, advanced methods for fabricating ultrasmall nanoscale transistors, and discusses the challenges and future trends of ultrasmall devices. For several decades after Moore's Law is proposed, there is a continuous effort to reduce the feature‐size of transistors. However, as the size of transistors continues to decrease, numerous challenges and obstacles including severe short channel effects (SCEs) are emerging. Recently, low‐dimensional materials have provided new opportunities for constructing small feature‐size transistors due to their superior electrical properties compared to silicon. Here, state‐of‐the‐art low‐dimensional materials‐based transistors with small feature‐sizes are reviewed. Different from other works that mainly focus on material characteristics of a specific device structure, the discussed topics are utilizing device structure design including vertical structure and nano‐gate structure, and nanofabrication techniques to achieve small feature‐sizes of transistors. A comprehensive summary of these small feature‐size transistors is presented by illustrating their operation mechanism, relevant fabrication processes, and corresponding performance parameters. Besides, the role of small feature‐size transistors based on low‐dimensional materials in further reducing the small footprint is also clarified and their cutting‐edge applications are highlighted. Finally, a comparison and analysis between state‐of‐art transistors is made, as well as a glimpse into the future research trajectory of low dimensional materials‐based small feature‐size transistors is briefly outlined.

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry
Designing sub-10-nm Metal-Oxide-Semiconductor Field-Effect Transistors via Ballistic Transport and Disparate Effective Mass: The Case of Two-Dimensional BiN

Wenhan Zhou,Shengli Zhang,Shiying Guo,Yangyang Wang,Jing Lu,Xing Ming,Zhi Li,Hengze Qu,Haibo Zeng

DOI: https://doi.org/10.1103/PhysRevApplied.13.044066

IF: 4.6

2020-01-01

Physical Review Applied

Abstract:In the post-Moore era, improving energy efficiency is an urgent requirement for microelectronics moving towards the Internet of Things, artificial intelligence, and 5G. In particular, two-dimensional (2D) materials with natural passivation, gate electrostatics, and high mobility have attracted significant attention for integrated circuits in the race towards next-generation field-effect transistors (FETs). Here, by coupling first-principles and nonequilibrium-Green's-function approaches, we obtain a physical understanding of the ballistic transport properties of a V-V binary bismuth nitride (BiN) material. Promisingly, monolayer BiN has sharp conduction-band and flat valence-band edges, which exhibit disparate effective masses. Simulated sub-10-nm monolayer BiN transistors show potential device performance and fulfill the high-performance and low-power requirements of the goals of the International Technology Roadmap for Semiconductors 2028 with their optimal parameters. Furthermore, by comprehensively analyzing the effective mass, density of states, on-state current, subthreshold swing, etc., we show that materials whose band dispersions have an extreme character have advantages for transistors. Also, benchmarking of the energy-delay product confirms that BiN FETs possess sufficient competitiveness against other 2D FETs. We believe that this could be a guide for designing potential channel materials for next-generation FETs.
2D materials readiness for the transistor performance breakthrough

Qing Zhang,Chunsen Liu,Peng Zhou

DOI: https://doi.org/10.1016/j.isci.2023.106673

IF: 5.8

2023-04-01

iScience

Abstract:As the size of the transistor scales down, this strategy has confronted challenges because of the fundamental limits of silicon materials. Besides, more and more energy and time are consumed by the data transmission out of transistor computing because of the speed mismatching between the computing and memory. To meet the energy efficiency demands of big data computing, the transistor should have a smaller feature size and store data faster to overcome the energy burden of computing and data transfer. Electron transport in two-dimensional (2D) materials is constrained within a 2D plane and different materials are assembled by the van der Waals force. Owning to the atomic thickness and dangling-bond-free surface, 2D materials have demonstrated advantages in transistor scaling-down and heterogeneous structure innovation. In this review, from the performance breakthrough of 2D transistors, we discuss the opportunities, progress and challenges of 2D materials in transistor applications.

multidisciplinary sciences
Small footprint transistor architecture for photoswitching logic and in situ memory

Chunsen Liu,Huawei Chen,Xiang Hou,Heng Zhang,Jun Han,Yu-Gang Jiang,Xiaoyang Zeng,David Wei Zhang,Peng Zhou

DOI: https://doi.org/10.1038/s41565-019-0462-6

IF: 38.3

2019-05-27

Nature Nanotechnology

Abstract:The need for continuous size downscaling of silicon transistors is driving the industrial development of strategies to enable further footprint reduction<sup><a href="/articles/s41565-019-0462-6#ref-CR1">1</a>,<a href="/articles/s41565-019-0462-6#ref-CR2">2</a></sup>. The atomic thickness of two-dimensional materials allows the potential realization of high-area-efficiency transistor architectures. However, until now, the design of devices composed of two-dimensional materials has mimicked the basic architecture of silicon circuits<sup><a href="#ref-CR3">3</a>,<a href="#ref-CR4">4</a>,<a href="#ref-CR5">5</a>,<a href="/articles/s41565-019-0462-6#ref-CR6">6</a></sup>. Here, we report a transistor based on a two-dimensional material that can realize photoswitching logic (OR, AND) computing in a single cell. Unlike the conventional transistor working mechanism, the two-dimensional material logic transistor has two surface channels. Furthermore, the material thickness can change the logic behaviour—the architecture can be flexibly expanded to achieve in situ memory such as logic computing and data storage convergence in the same device. These devices are potentially promising candidates for the construction of new chips that can perform computing and storage with high area-efficiency and unique functions.

materials science, multidisciplinary,nanoscience & nanotechnology
High-Performance Transistors Based on Zinc Tin Oxides by Single Spin-Coating Process

Yunlong Zhao,Lian Duan,Guifang Dong,Deqiang Zhang,Juan Qiao,Liduo Wan,Yong Qiu

DOI: https://doi.org/10.1021/la304581c

IF: 3.9

2012-01-01

Langmuir

Abstract:Films of zinc tin oxide (ZTO), grown from solutions with zinc acetate dehydrate and tin(II) 2-ethylhexanoate dissolved in 2-methoxyethanol, have been used to fabricate thin-film transistors in combination with solution-processed aluminum oxide as the gate insulator. And the nonhomogeneity of the single-layer ZTO films, caused by both ZTO film-substrate interaction and surface crystallization, has been studied, which is essential to achieve high performance transistors. In the bottom-contact thin-film transistor based on a Sn-rich layer of ZTO, a high mobility of 78.9 cm(2) V(-1) s(-1) in the saturation region has been obtained, with an on-to-off current ratio of 10(5) and a threshold gate voltage of 1.6 V.
The future transistors

Wei Cao,Huiming Bu,Maud Vinet,Min Cao,Shinichi Takagi,Sungwoo Hwang,Tahir Ghani,Kaustav Banerjee

DOI: https://doi.org/10.1038/s41586-023-06145-x

IF: 64.8

2023-08-17

Nature

Abstract:The metal–oxide–semiconductor field-effect transistor (MOSFET), a core element of complementary metal–oxide–semiconductor (CMOS) technology, represents one of the most momentous inventions since the industrial revolution. Driven by the requirements for higher speed, energy efficiency and integration density of integrated-circuit products, in the past six decades the physical gate length of MOSFETs has been scaled to sub-20 nanometres. However, the downscaling of transistors while keeping the power consumption low is increasingly challenging, even for the state-of-the-art fin field-effect transistors. Here we present a comprehensive assessment of the existing and future CMOS technologies, and discuss the challenges and opportunities for the design of FETs with sub-10-nanometre gate length based on a hierarchical framework established for FET scaling. We focus our evaluation on identifying the most promising sub-10-nanometre-gate-length MOSFETs based on the knowledge derived from previous scaling efforts, as well as the research efforts needed to make the transistors relevant to future logic integrated-circuit products. We also detail our vision of beyond-MOSFET future transistors and potential innovation opportunities. We anticipate that innovations in transistor technologies will continue to have a central role in driving future materials, device physics and topology, heterogeneous vertical and lateral integration, and computing technologies.

multidisciplinary sciences
High-throughput design of functional-engineered MXene transistors with low-resistive contacts

Sirsha Guha,Arnab Kabiraj,Santanu Mahapatra

DOI: https://doi.org/10.1038/s41524-022-00885-6

IF: 12.256

2022-09-22

npj Computational Materials

Abstract:Two-dimensional material-based transistors are being extensively investigated for CMOS (complementary metal oxide semiconductor) technology extension; nevertheless, downscaling appears to be challenging owing to high metal-semiconductor contact resistance. Here, we propose a functional group-engineered monolayer transistor architecture that takes advantage of MXenes' natural material chemistry to offer low-resistive contacts. We design an automated, high-throughput computational pipeline that first performs hybrid density functional theory-based calculations to find 16 sets of complementary transistor configurations by screening more than 23,000 materials from an MXene database and then conducts self-consistent quantum transport calculations to simulate their current-voltage characteristics for channel lengths ranging from 10 nm to 3 nm. Performance of these devices has been found to meet the requirements of the international roadmap for devices and systems (IRDS) for several benchmark metrics (on current, power dissipation, delay, and subthreshold swing). The proposed balanced-mode, functional-engineered MXene transistors may lead to a realistic solution for the sub-decananometer technology scaling by enabling doping-free intrinsically low contact resistance.

materials science, multidisciplinary,chemistry, physical
Design and optimization of CMOS layout structure for improved semiconductor device performance

Peihao Huang

DOI: https://doi.org/10.1088/1742-6596/2649/1/012040

2023-12-07

Journal of Physics Conference Series

Abstract:CMOS layout structure plays a very important role in the field of semiconductor. Since the invention of CMOS technology in the 1970s, engineers have developed many other CMOS layout technologies based on it. This paper will also focus on the CMOS transistor layout structure, focusing on the analysis of three more important structures, demonstrating their impact on the performance of semiconductor devices. Before that, this paper will first introduce the basic theory of CMOS, such as the drift and diffusion of charge carriers in PN junctions, and the working principle of PMOS and NMOS, so as to facilitate us to further describe the optimization and improvement of CMOS structure. Then, the performance and characteristics of each structure are introduced in detail, and finally the comparison is made to highlight their advantages in technology and performance compared with traditional structures. In the future, CMOS structure layout will also become a hot spot, constantly creating more reasonable and advanced structures to improve semiconductor performance.
HamFET: A High-Performance Subthermionic Transistor Through Incorporating Hybrid Switching Mechanism

Qianqian Huang,Shaodi Xu,Ru Huang

DOI: https://doi.org/10.1109/jxcdc.2023.3338480

2024-01-01

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits

Abstract:Field-effect transistors (FETs) switched by quantum band-to-band tunneling (BTBT) mechanism, rather than conventional thermionic emission mechanism, are emerging as an exciting device candidate for future ultralow-power electronics due to their exceptional electronic properties of subthermionic subthreshold swing. However, fundamental limitations in drive current have hindered such technology encountering for high-performance and high-speed operations, especially for silicon-based device. Here, we demonstrate a novel pathway of integrating tunneling and thermionic emission mechanisms together, to circumvent their respective limitation and design a hybrid adaptively modulated FET (HamFET) that orients power saving and performance enhancement simultaneously. This transistor architecture, utilizing a nested source configuration without cost or area penalties, exhibits both ultrasteep (subthermionic) subthreshold swing and the largest "on" and "off" current ratio over the state-of-the-art tunneling transistors. Our design methodology of hybrid switching mechanism is also applicable to other mechanism, material, and architecture systems, opening the doors to a range of high-speed application opportunities for ultralow-power but performance-insufficient electronics.
Modifying the Power and Performance of 2-Dimensional MoS 2 Field Effect Transistors

Fulin Zhuo,Jie Wu,Binhong Li,Moyang Li,Chee Leong Tan,Zhongzhong Luo,Huabin Sun,Yong Xu,Zhihao Yu

DOI: https://doi.org/10.34133/research.0057

IF: 11

2023-01-01

Research

Abstract:Over the past 60 years, the semiconductor industry has been the core driver for the development of information technology, contributing to the birth of integrated circuits, Internet, artificial intelligence, and Internet of Things. Semiconductor technology has been evolving in structure and material with co-optimization of performance–power–area–cost until the state-of-the-art sub-5-nm node. Two-dimensional (2D) semiconductors are recognized by the industry and academia as a hopeful solution to break through the quantum confinement for the future technology nodes. In the recent 10 years, the key issues on 2D semiconductors regarding material, processing, and integration have been overcome in sequence, making 2D semiconductors already on the verge of application. In this paper, the evolution of transistors is reviewed by outlining the potential of 2D semiconductors as a technological option beyond the scaled metal oxide semiconductor field-effect transistors. We mainly focus on the optimization strategies of mobility ( μ ), equivalent oxide thickness ( EOT ), and contact resistance ( R C ), which enables high ON current ( I on ) with reduced driving voltage ( V dd ). Finally, we prospect the semiconductor technology roadmap by summarizing the technological development of 2D semiconductors over the past decade.

multidisciplinary sciences
A Novel Tunnel FET Design Through Adaptive Bandgap Engineering with Constant Sub-Threshold Slope over 5 Decades of Current and High $\text{i}_{\mathrm {on}}/\text{i}_{\mathrm {OFF}}$ Ratio

Yang Zhao,Chunlei Wu,Qianqian Huang,Cheng Chen,Jiadi Zhu,Lingyi Guo,Rundong Jia,Zhu Lv,Yuchao Yang,Ming Li,Ru Huang

DOI: https://doi.org/10.1109/led.2017.2679031

IF: 4.8157

2017-01-01

IEEE Electron Device Letters

Abstract:In this letter, a novel hetero-stacked TFET (HS-TFET) is experimentally demonstrated and optimized for the first time, which can effectively suppress the subthreshold slope (SS) degradation without leakage current increase through self-adaptively current replenishing with bandgap engineering, greatly alleviating the critical issue of high average SS in conventional TFETs. Based on CMOS-compatible technology, the fabricated HS-TFETs of vertically stacked Si-Si1-xGex source can experimentally achieve superior performance with nearly constant SS over five decades of drain current, high Ion (similar to 14 mu A/mu m @ V-DS = -1 V), and large Ion/Ioff ratio (similar to 10(7)). The proposed device with high process compatibility shows great potentials for future ultra-low power applications.
Emerging Materials and Transistors for Integrated Circuits

Ming Liu,Lian-Mao Peng

DOI: https://doi.org/10.1093/nsr/nwae040

IF: 20.6

2024-01-01

National Science Review

Abstract:>The device technology for integrated circuits(ICs) has received a great deal of attention in the past decade since the mainstream silicon-based complementary metal-oxide-semiconductor(CMOS) field-effect transistor(FET) for modern ICs had been encountering development bottlenecks due to the combination of power constraints, physics, cost and fabrication processes.

High-Performance Transistors by Design

New structure transistors for advanced technology node CMOS ICs

The Optimization and Fabrication of High Electron Mobility Transistors Integrated with Microstructure

High Performance Tunnel Field Effect Transistor with a Tri-Material-gate Structure

How Materials and Device Factors Determine the Performance: A Unified Solution for Transistors with Nontrivial Gates and Transistor-Diode Hybrid Integration

A Low Cost & High Performance PNP Transistor Design & Fabrication in SiGe BiCMOS

Research Progress in Ge-based Advanced Field Effect Transistor Technology

High-Performance Dual-Gate Transistors Based on Aligned Carbon Nanotubes

Nanomaterials in transistors: From high-performance to thin-film applications

Small Feature‐Size Transistors Based on Low‐Dimensional Materials: From Structure Design to Nanofabrication Techniques

Designing sub-10-nm Metal-Oxide-Semiconductor Field-Effect Transistors via Ballistic Transport and Disparate Effective Mass: The Case of Two-Dimensional BiN

2D materials readiness for the transistor performance breakthrough

Small footprint transistor architecture for photoswitching logic and in situ memory

High-Performance Transistors Based on Zinc Tin Oxides by Single Spin-Coating Process

The future transistors

High-throughput design of functional-engineered MXene transistors with low-resistive contacts

Design and optimization of CMOS layout structure for improved semiconductor device performance

HamFET: A High-Performance Subthermionic Transistor Through Incorporating Hybrid Switching Mechanism

Modifying the Power and Performance of 2-Dimensional MoS 2 Field Effect Transistors

A Novel Tunnel FET Design Through Adaptive Bandgap Engineering with Constant Sub-Threshold Slope over 5 Decades of Current and High $\text{i}_{\mathrm {on}}/\text{i}_{\mathrm {OFF}}$ Ratio

Emerging Materials and Transistors for Integrated Circuits