Abstract:Recent applications require vertical chip stacking to increase the performance of many devices without the need of advanced node components. Image sensors and vision systems will embed more and more smart functions, for instance, image processing, object recognition, and movement detection. In this perspective, the combination of Cu-to-Cu direct hybrid bonding technology with Through-Silicon-Via (TSV) will allow 3D interconnection between pixels and the associated computing and memory structures, each function fabricated on a separate wafer. Wafer-to-wafer hybrid bonding was achieved with multi-pitch design—1–4 μm—of single levels of Cu damascene patterned on 300 mm silicon substrates. Defect-free bonding, as far as the extreme edge of the wafer, was demonstrated on a stack with three wafers. Middle wafers thinning was done with grinding only and with a thickness uniformity (TTV) <2 μm to an ultimate thinning as low as 3 μm. Alignment performance was characterized by post-bonding for two superposed hybrid bonding interfaces. In our set of wafers, modeling the alignment with translation, rotation, and scaling components enables us to optimize the residuals down to 3σ < 100 nm. A process flow of thin TSV with a fine pitch of 2 μm for high-density vertical interconnect through a three-wafer stack was developed. Via-last TSV architecture was adopted with 1 μm TSV diameter and 10 μm thickness. Lithography, etching solutions, Ti/TiN barrier deposition, and void-free Cu filling solutions were demonstrated. TSV cross sections after CMP and connections with top and bottom Cu damascene lines show good profile control. Process developments are matured and can be reliably used in the fabrication of an electrical test vehicle including vertical interconnects associating multi-wafers stacking with a hybrid bonding process and high-density thin TSV applicable to low pitches (<5 μm).

Fabrication and characterization of bump-less Cu-Cu bonding by wafer-on-wafer stacking for 3D IC

Novel design and reliability assessment of a 3D DRAM stacking based on Cu-Sn micro-bump bonding and TSV interconnection technology

Effects of Bonding Parameters on the Reliability of Fine-Pitch Cu/Ni/SnAg Micro-Bump Chip-to-Chip Interconnection for Three-Dimensional Chip Stacking

Development of low temperature Cu Cu bonding and hybrid bonding for three-dimensional integrated circuits (3D IC)

Fabrication of Fine-Pitch Cu-Sn Microbumps Using Electroplating and Wet Seed Layer Etching

Cu–Cu Bonded Microbump Interconnects with a 10- $\mu$ M Pitch for 3-D-stacked Chiplets

Fabrication and Comparison of Bumpless Wafer-On-Wafer Integration and Bump-Containing Chip-On-Chip Integration

3D Integration via D2D Bump-Less Cu Bonding with Protruded and Recessed Topographies

Three-dimensional hybrid bonding integration challenges and solutions toward multi-wafer stacking

Solid-State-Diffusion Bonding for Wafer-Level Fine-Pitch Cu/Sn/Cu Interconnect in 3-D Integration

Development of Equivalent Material Properties of Microbump for Simulating Chip Stacking Packaging

Chip-to-wafer (C2W) 3D integration with well-controlled template alignment and wafer-level bonding

Fabrication of Complicated Three Dimensional Structures Utilizing Multi-Stack Bonding

An Exploratory Study to Achieve Cu Bump Bonding Structures with Assistance of Bimodal-sized Cu Nanoparticles by Low-Temperature Thermocompression Bonding in Air

Materials, Processing and Reliability of Low Temperature Bonding in 3D Chip Stacking

Recent Progress on Bumpless Cu/SiO2 Hybrid Bonding for 3D Heterogeneous Integration

Mechanical and Electrical Reliability Assessment of Bump-Less Wafer-on-wafer Integration with One-Time Bottom-Up TSV Filling

Reliability characterization of Chip-on-Wafer-on-Substrate (CoWoS) 3D IC integration technology

Wafer-to-Wafer Hybrid Bonding Development by Advanced Finite Element Modeling for 3-D IC Packages

Enhanced Cu-to-Cu direct bonding by controlling surface physical properties

Modelling and characterization on wafer to wafer hybrid bonding technology for 3D IC packaging