Abstract:With the feature size shrinking, traditional electronic design methodologies face some bottlenecks such as per wafer cost, large interconnect delay, and high leakage power. Threedimensional integration circuit (3D IC) has been regarded as a promising solution to mitigate these problems. 3D ICs stack separate tiers in the vertical direction and connect them using vertical connections such as Through-Silicon-Vias (TSVs). Compared with traditional 2D integration, the 3D technology can provide many benefits such as reduction in the interconnect wire length, improvement of memory bandwidth, and support for realization of heterogeneous integration [1]. 3D power delivery network (PDN) is the basic support system for 3D ICs, which includes the power/ground (P/G) networks, the vertical interconnects, and the package (shown in Figure 1). In 3D PDNs, P/G TSVs connect the P/G networks in different tiers, and the bottommost tier is connected to the package through metal bumps and then routed to the voltage sources on the PCB board. The design of a 3D PDN is much more complex than the design of a 2D power network [2] and considered as one of the most critical challenges in IC design. As power coupling between different tiers becomes tighter and multiple tiers are stacked together into small footprints, delivering current to all parts of the 3D IC becomes highly challenging. An irrational PDN design may result in low supply voltage levels in the grid, i.e. large IR-drop, and thus increase the gate delay, lead to timing violations and harm the functionality of circuits [3]. To design a PDN, suitable simulation approaches are necessary. However, PDN analysis is usually a time and resource consuming task since there are millions of nodes in most mesh-based PDNs. The simulation problem becomes tougher in 3D cases as the network scale may be several times larger than that of 2D cases. Nevertheless, most existing studies tend to regard the 3D power system as a whole like a 2D power system, which does not utilize the inherent 3D structure and causes inefficiency. Considering that TSVs naturally form good partition boundaries, a hierarchical technique to analyze the 3D PDN regarding the power grid of each layer as a macro-model may lead to efficiency and offer an opportunity for further parallel speedup. Numerous studies spring up these years in the field of 3D PDN design. However, most studies tended to simply increase the number of TSVs to mitigate power supply problems. Since TSV fabrication causes tensile stress around TSVs and results in significant carrier mobility variation in the devices P/G TSV

A hybrid vertical interconnect for three-dimensional network-on-chip

Modeling and Characterization of Carbon-Based Heterogeneous Interconnects for 3-D Ics

Lateral Asynchronous and Vertical Synchronous 3D Network on Chip with Double Pumped Vertical Links.

Two 10Gb/s/pin Low-Power Interconnect Methods for 3D ICs

An Inductive-Coupling Interconnected Application-Specific 3D NoC Design.

Dual-link interconnect architecture for 3-D Mesh-based network on chip

Redundant Vias Insertion for Performance Enhancement in 3D ICs.

Dual-Link Hierarchical Cluster-Based Interconnect Architecture for 3D Network on Chip

High Aspect Ratio Copper Through-Silicon-vias for 3D Integration

Different designs of TSVs for 3D IC: Signal integrity analysis with cascaded scattering matrix

A 3D Integration Testing Vehicle with TSV Interconnects

Incremental 3D NoC synthesis based on physical-aware router merging algorithm

Through-Silicon-Via Assignment for 3D ICs

Crosstalk Reduction in TSV Arrays with Direct Ohmic Contact Between Metal and Silicon-Substrate

Skybridge-3D-CMOS: A Vertically-Composed Fine-Grained 3D CMOS Integrated Circuit Technology

Optimizing Vertical Link Placement and Congestion Aware Dynamic Elevator Assignment for Partially Connected 3D-Nocs

Hierarchical Simulation and Optimization of 3 D Power Delivery Network

System-level optimization of Network-on-Chips for heterogeneous 3D System-on-Chips

Electrical Characterization of RF TSV for 3D Multi-Core and Heterogeneous ICs

Design and analysis of an I-shaped TSV structure for 3D SiP

Three-dimensional hybrid bonding integration challenges and solutions toward multi-wafer stacking