Total Ionizing Dose Effect on Low On/off Switching Ratio TiO2 Memristive Memories

Chi Yaqing,Liu Rongrong,Tang Zhensen,Song Ruiqiang

DOI: https://doi.org/10.1109/tns.2014.2318298

2013-01-01

Abstract:Total ionizing dose effect is experimentally investigated on the electrical characteristics of low on/off switching ratio TiO2 memristive memories for the first time. Degradations of parameters have no impact on data storage and reading/writing operations.

What problem does this paper attempt to address?

Total Ionizing Dose (TID) Effects on $\hbox{tao}_{x}$ -Based Resistance Change Memory

Lijie Zhang,Ru Huang,Dejin Gao,Pan Yue,Poren Tang,Fei Tan,Yimao Cai,Yangyuan Wang

DOI: https://doi.org/10.1109/ted.2011.2148121

IF: 3.1

2011-01-01

IEEE Transactions on Electron Devices

Abstract:In this brief, the total ionizing dose (TID) effects of gamma rays generated from a Co-60 source on the TaOx-based resistive switching memory (resistive random-access memory, RRAM) is investigated. The low-resistance state (LRS) of the RRAM is immune to TID effects, whereas the sensitivity of the high-resistance state (HRS) of RRAM to TID effects depends on the dimensions of the device, including the thickness of the oxide film and the area of the device. The HRS of the device with large area and thick oxide layer is vulnerable to TID effects and has a high probability to change into the LRS. Further investigation found that the lower the high resistance, the higher the failure rate of the RRAM device under TID impact, which indicates that the multilevel cell of RRAM should be carefully designed for space system applications considering the radiation effects. The failure of the HRS under TID is explained by defect generation in the oxide film.
The impact of oxidation voltage on the switching characteristics of Ag/TiO2/Ti nanotube memristor

Chaozheng Zhao,Yuanxing Li,Shuyi Yao,Zongtao Zhu,Hui Chen

DOI: https://doi.org/10.1142/s0217979225400351

2024-06-26

International Journal of Modern Physics B

Abstract:International Journal of Modern Physics B, Ahead of Print. Titanium dioxide is one of the earliest materials used in memristors. It is widely studied and researched due to its advantages of the simple preparation process, high dielectric constant, wide bandgap and chemical stability. In this paper, a two-step anodization process was used to prepare the oxidized nanotubes array, which served as the foundation for fabricating Ag/TiO2/Ti memristors. The research delved into the impact of diverse oxidation voltages on the resistive performance of memristor and discussed the underlying mechanism for resultant performance.

physics, condensed matter, applied, mathematical
A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memory

Xing Long Shao,Kyung Min Kim,Kyung Jean Yoon,Seul Ji Song,Jung Ho Yoon,Hae Jin Kim,Tae Hyung Park,Dae Eun Kwon,Young Jae Kwon,Yu Min Kim,Xi Wen Hu,Jin Shi Zhao,Cheol Seong Hwang

DOI: https://doi.org/10.1039/c6nr02800d

IF: 6.7

2016-09-28

Nanoscale

Abstract:Thermochemical and electronic trapping/detrapping mechanism-based resistance switching in TiO2 is one of the most extensively researched topics in the field of resistance-switching random access memory (ReRAM). In this study, the subtle correlation between the formation and rupture of the Magnéli-based conducting filament (CF), which is the mechanism of non-polar thermochemical-reaction-based switching, and the electron trapping/detrapping at the defect centers, which is the mechanism of bipolar electronic switching, is examined in detail. The chemical interaction between the TiN top electrode and the TiO2 layer generates a stable and immobile electron trapping layer, which is called a "switching layer", whereas the thin region between the just-mentioned switching layer and the remaining Magnéli CF after the thermochemical reset comprises a non-switching layer. The seemingly very complicated switching behavior with respect to the bias polarity, compliance current, and detailed biasing sequence could be reasonably explained by the phenomenological model based on the combined motions of the CF, switching layer, and non-switching layer. Light-induced detrapping experiments further supplement the suggested switching model.
Total ionizing dose (TID) effects of γ ray radiation on switching behaviors of Ag/AlO x /Pt RRAM device.

Fang Yuan,Zhigang Zhang,Jer-Chyi Wang,Liyang Pan,Jun Xu,Chao-Sung Lai

DOI: https://doi.org/10.1186/1556-276X-9-452

2014-01-01

Nanoscale Research Letters

Abstract:The total ionizing dose (TID) effects of (60)Co γ ray radiation on the resistive random access memory (RRAM) devices with the structure of Ag/AlO x /Pt were studied. The resistance in low resistance state (LRS), set voltage, and reset voltage are almost immune to radiation, whereas the initial resistance, resistance at high resistance state (HRS), and forming voltage were significantly impacted after radiation due to the radiation-induced holes. A novel hybrid filament model is proposed to explain the radiation effects, presuming that holes are co-operated with Ag ions to build filaments. In addition, the thermal coefficients of the resistivity in LRS can support this hybrid filament model. The Ag/AlO x /Pt RRAM devices exhibit radiation immunity to a TID up to 1 Mrad(Si) and are highly suitable for radiation-hard electronics applications.
Optimization of the Cycle Numbers of TiO 2 Resistive Random-Access Memory Devices by Annealing

Shuyi Yao,Yuanxing Li,Chaozheng Zhao,Fengying Wang,Yujie Bai,Yao Wang,Zongtao Zhu,Hui Chen

DOI: https://doi.org/10.1021/acsaelm.2c01646

IF: 4.494

2023-02-08

ACS Applied Electronic Materials

Abstract:Resistance switching (RS) devices that are based on titanium dioxide (TiO2) nanomaterials have recently attracted substantial research interest because of their simple preparation technology and potential applications in the applications of memory devices. In this paper, the RS characteristics of TiO2-based memristors were regulated by changing the crystal structure of the TiO2 film. Resistive switching memory, consisting of Ag/amorphous TiO2/Ti fabricated by anodic oxidation, exhibited poor cycling stability. Annealing was applied to the anodized sample over the temperature range of 230–680 °C, and the structure of TiO2 was investigated throughout the process. Amorphous TiO2 transformed into the anatase phase as the annealing temperature was increased to 280 °C and the stable cycle number of the device peaked at 51. By annealing at >450 °C, TiO2 was gradually transformed into the rutile phase, and the stable cycle number of the device decreased to 7. X-ray photoelectron spectroscopy confirmed that the concentration of oxygen vacancies in rutile TiO2 decreased with increasing temperature compared with that in anatase TiO2, resulting in the declining performance of the device. This work presents a low-cost annealing process to prepare stable anatase TiO2-based memristors, which will promote the industrialization of the devices for nonvolatile memory applications in the future.

materials science, multidisciplinary,engineering, electrical & electronic
Effect of voltage polarity and amplitude on electroforming of TiO2 based memristive devices.

Hao Jiang,Qiangfei Xia

DOI: https://doi.org/10.1039/c3nr00622k

IF: 6.7

2013-01-01

Nanoscale

Abstract:Pt/TiO2/Pt/Ti memristive devices were electrically formed to either the ON or OFF state using voltages of the same polarity but with different amplitudes. The forming step dictated the subsequent switching behaviour. A qualitative model based on the creation and migration of oxygen vacancies was proposed to explain the experimental results. sdf
Interfacial reaction induced digital-to-analog resistive switching in TiO2-based memory devices

Lifang Hu,Wei Gao,Ming Xiao,Zihao Li

DOI: https://doi.org/10.1016/j.physb.2022.413730

2022-05-01

Abstract:In the study, TiO2 based resistive random access memory (RRAM) was fabricated by sol-gel technique. By changing the thickness of the TiO2 layer, the devices showed a transition of bipolar digital-type to analog-type memristive behavior under cyclic voltage sweeping process, along with well-defined high and low resistance states. The creation and rupture of nanoscale conductive filaments by drift of the oxygen vacancies was responsible for the digital behavior. The digital-type conduction mechanisms were explained as trap-controlled space charge-limited current conduction mechanism at high resistance state and Ohmic conduction mechanism at low resistance state, respectively. Schottky barrier change induced by the formation of the interfacial layer between Al and TiO2 was responsible for the analog behavior. The analog-type switching mechanisms were explained as trapping and de-trapping of carriers. The interfacial microstructure between TiO2 and electrode would affect the resistive switching behavior of the devices remarkably.
Total-Ionizing-Dose Effects on Resistance Stability of Programmable Metallization Cell Based Memory and Selectors

W. Chen,R. Fang,H. J. Barnaby,M. B. Balaban,Y. Gonzalez-Velo,J. L. Taggart,A. Mahmud,K. Holbert,A. H. Edwards,M. N. Kozicki

DOI: https://doi.org/10.1109/tns.2016.2618359

IF: 1.703

2017-01-01

IEEE Transactions on Nuclear Science

Abstract:In this paper, the operation and effects of radiation on Programmable Metallization Cells (PMC) memory and selector devices are analyzed and discussed. The Ag- or Cu-Ge30Se70 devices demonstrate non-volatile memory switching characteristics while the Ag- or Cu-SiO2 devices show a volatile threshold switching property. The impact of total ionizing dose from gamma-ray irradiation on both device types is investigated experimentally. It is found that the virgin and high-resistance state of Ge30Se70 memory devices degrade after gamma-ray exposure while they are well preserved in SiO2 selector devices.
Total Ionizing Radiation Effects of 2-T SONOS for 130 Nm/4 Mb NOR Flash Memory Technology

FengYing Qiao,LiYang Pan,Xiao Yu,HaoZhi Ma,Dong Wu,Jun Xu

DOI: https://doi.org/10.1007/s11432-013-4982-7

2014-01-01

Science China Information Sciences

Abstract:In this paper, we have studied the total ionizing dose (TID) radiation response up to 2 Mrad(Si) of silicon-oxide-nitride-oxide-silicon (SONOS) memory cells and memory circuits, fabricated in a 130 nm complimentary metal-oxide-semiconductor (CMOS) SONOS technology. We explored the threshold voltage (V T ) degradation mechanism and found that the V T shifts of SONOS cells depend on the charge state; simply programming the cell to a higher V T cannot compensate for the radiation induced V T loss. The off-state current (I off) increase in the SONOS cell is also studied in this paper. Both V T and I off degradation would affect the memory system. Read data failures are mainly caused by V T shifts under irradiation, and program and erase failures are mainly caused by increased I off, which overloads the charge pumping circuit. By varying the reference current, our 4 Mb NOR flash chip has the potential to survive a radiation dose of 1 Mrad(Si) in read mode.
Improvement Of Resistive Switching Properties In Zro2-Based Reram With Implanted Ti Ions

Qi Liu,Shibing Long,Wei Wang,Qingyun Zuo,Sen Zhang,Junning Chen,Ming Liu

DOI: https://doi.org/10.1109/LED.2009.2032566

IF: 4.8157

2009-01-01

IEEE Electron Device Letters

Abstract:In this letter, the resistive switching properties of a ZrO2-based memory film with implanted Ti ions are investigated. The testing results demonstrate that doping Ti in ZrO2 can remove the electroforming process and reduce the variations of switching parameters such as Set voltage and resistance in OFF state. Furthermore, the Ti-doped ZrO2 resistive switching memory also exhibits high device yield (nearly 100%), low operating voltage, fast speed, large on/off ratio (> 10(4)), and long retention time (> 10(7) s). The formation and rupture of conducting filaments are suggested to be responsible for the resistive switching phenomenon. The doped Ti impurities can improve the formation of conducting filaments and switching behaviors.
Resistive switching and synaptic learning performance of a TiO2 thin film based device prepared by sol–gel and spin coating techniques

Weitao Han,Lifang Hu,Hao Wang

DOI: https://doi.org/10.1088/1361-6528/ab6472

IF: 3.5

2019-12-20

Nanotechnology

Abstract:A resistance random access memory device based on TiO2 thin films was fabricated using a sol–gel spin and coating techniques. The composition, surface morphology, and microstructure of the TiO2 films were characterized using x-ray diffraction, Raman spectroscopy, scanning electronic microscopy, and transmission electron microscopy, respectively. The fabricated Al/TiO2 film/fluorine-doped tin oxide device exhibited electroforming-free bipolar resistive switching characteristics with a stable ON/OFF ratio higher than 300. The performance of the endurance cycling was still good after 100 direct sweeping cycles. A retention time of no less than 104 s was confirmed. A switching mechanism is systematically discussed based on the test results, and space-charge-limited current was found to be responsible for the switching behavior. Multilevel memory performance was realized in the as-fabricated devices. The synaptic performance was investigated by applying consecutive positive (0–2 V) and negative (0 to −1.6 V) voltage sweeps. The fabricated devices were found to exhibit ‘learning-experience’ behavior.

Engineering,Materials Science,Medicine,Physics
Degradation Characteristics of Resistive Switching Memory Devices Correlated with Electric Field Induced Ion-Migration Effect of Anode

liu rui,qiu gang,chen bing,gao bin,kang jinfeng

DOI: https://doi.org/10.1088/0256-307X/30/11/117104

2013-01-01

Chinese Physics Letters

Abstract:The electrode effect of resistive switching memory devices on resistive switching behaviors is studied. Compared to TiN- or Ti-electrode devices, significantly reduced switching parameters such as resistance-ratio of high-and low-resistance states and set-voltage are observed experimentally in the Al-electrode devices when a positive voltage bias is applied to the Al-electrode during the forming process. An electric-field induced metal-ion-migration effect is proposed to elucidate the observed electrode dependence of the resistive switching behaviors in the resistive switching memory devices. The further measured data identify the validity of the proposed mechanism.
Metal/TiO 2 Interfaces for Memristive Switches

J. Joshua Yang,John Paul Strachan,Feng Miao,Min-Xian Zhang,Matthew D. Pickett,Wei Yi,Douglas A. A. Ohlberg,G. Medeiros-Ribeiro,R. Stanley Williams

DOI: https://doi.org/10.1007/s00339-011-6265-8

2011-01-01

Applied Physics A

Abstract:The interfaces between metal electrodes and the oxide in TiO2-based memristive switches play a key role in the switching as well as in the I–V characteristics of the devices in different resistance states. We demonstrate here that the work function of the metal electrode has a surprisingly minor effect in determining the electronic barrier at the interface. In contrast, Ti oxides can be readily reduced by most electrode metals. The amount of oxygen vacancies created by these chemical reactions essentially determines the electronic barrier at the device interfaces.
Nonvolatile resistive switching memory behavior of the TiOx-based memristor

Hosameldeen Elshekh,Hongyan Wang,Shouhui Zhu,Chuan Yang,Jiangqiu Wang

DOI: https://doi.org/10.1016/j.chemphys.2024.112217

IF: 2.552

2024-04-01

Chemical Physics

Abstract:Memristors represent cutting-edge technology for extensive applications in integrated electronic devices, high-performance computing, digital and analog circuitry, and artificial intelligence. In this study, we fabricated a memristor device using a thin titanium oxide (TiOx) film as a functional layer by magnetron sputtering. We proposed a physical model to explain the device's resistive switching (RS) behavior based on a comprehensive analysis of conductance derived from current-voltage (I-V) curves. We found that the device exhibited improved resistance switching ratio, durability, and low operating voltage, which are desirable for high-density memory applications. We also revealed the roles of the space charge-limited current (SCLC) mechanism, Ohmic conduction in the RS process, and the formation and rupture of conductive filaments of silver and oxygen vacancies. Our findings demonstrate the effectiveness of TiOx as a functional layer and the importance of magnetron sputtering as a fabrication method for enhancing the performance of memristive devices. Our study also advances the mechanistic understanding of RS and highlights the potential of metal oxides in memristor technology. This research propels the ongoing exploration of innovative materials to enhance memristive devices' functionality and application scope in various technological domains.

chemistry, physical,physics, atomic, molecular & chemical
Nonvolatile behavior of resistive switching memory in Ag/WO x /TiO y /ITO device based on WO x /TiO y heterojunction

Hosameldeen Elshekh,Hongyan Wang,Chuan Yang,Shouhui Zhu

DOI: https://doi.org/10.1063/5.0189364

IF: 2.877

2024-04-05

Journal of Applied Physics

Abstract:Two-terminal structure memristors are the most promising electronic devices that could play a significant role in artificial intelligence applications of the next generation and the post-Moore era. In this work, we fabricated the memristive device by depositing a heterojunction WOx/TiOy functional layer onto an indium tin oxide substrate using magnetron sputtering. The Ag/WOx/TiOy/ITO device exhibits improved memory behavior of bipolar resistive switching (RS) nonvolatile compared to TiOy-based single-layer memristors, enabling it to meet high-density information storage requirements. Moreover, our device exhibited the coexistence of the negative differential resistance effect and the behavior of the RS memory. Through a comprehensive analysis of conductivity on the curve of current–voltage (I–V), a physical model based on the mechanism of space charge-limited current, ohmic conduction, and Schottky emission was suggested to explain the behavior device RS memory. This study's findings demonstrate that including a heterojunction bilayer WOx/TiOy as a functional layer can significantly improve the performance of memristive devices. This advancement expands the potential application of ferroelectric metallic oxide heterojunctions within the field of memristors.

physics, applied
Observation of Two Resistance Switching Modes in TiO2memristive Devices Electroformed at Low Current

Feng Miao,J. Joshua Yang,Julien Borghetti,Gilberto Medeiros-Ribeiro,R. Stanley Williams

DOI: https://doi.org/10.1088/0957-4484/22/25/254007

IF: 3.5

2011-01-01

Nanotechnology

Abstract:We report the observation of two resistance switching modes in certain 50 nm × 50 nm crossbar TiO(2) memristive devices that have been electroformed with a low-current process. The two switching modes showed opposite switching polarities. The intermediate state was shared by both modes (the ON state of the high-resistance mode or the OFF state of the low-resistance mode) and exhibited a relaxation to a more resistive state, including an initial transient decay. The activation energies of such a decay and ON-switching to the intermediate state were determined to be 50-210 meV and 1.1 eV, respectively. Although they are attributed to the coexistence of charge trapping and ionic motion, the ionic motion dominates in both switching modes. Our results indicate that the two switching modes in our system correspond to different switching layers adjacent to the interfaces at the top and bottom electrodes.
Improvement of Resistive Switching Properties in <formula formulatype="inline"><tex Notation="TeX">$ \hbox{ZrO}_{2}$</tex></formula>-Based <emphasis emphasistype="roman">ReRAM</emphasis> With Implanted Ti Ions

Qi Liu,Shibing Long,Wei Wang,Qingyun Zuo,Sen Zhang,Junning Chen,Ming Liu

DOI: https://doi.org/10.1109/LED.2009.2032566

IF: 4.8157

2009-01-01

IEEE Electron Device Letters

Abstract:In this letter, the resistive switching properties of a ZrO2-based memory film with implanted Ti ions are investigated. The testing results demonstrate that doping Ti in ZrO2 can remove the electroforming process and reduce the variations of switching parameters such as set voltage and resistance in off state. Furthermore, the Ti-doped ZrO2 resistive switching memory also exhibits high device yiel...
Engineering resistive switching behavior in TAO<inf>x</inf> based memristive devices for non-von Neuman computing applications

Jingxian Li,Teng Zhang,Qingxi Duan,Lidong Li,Yuchao Yang,Ru Huang

DOI: https://doi.org/10.1109/CSTIC.2018.8369200

2018-01-01

Abstract:Memristive devices are nowadays widely investigated for non-von Neuman computing, such as neuromorphic and in-memory computing, where memristors with incremental switching behavior are favorable for neuromorphic hardware while binary resistance state with high on/off ratio is desirable for the in-memory logic. Here we report the engineering of the resistive switching behavior in tantalum oxide based memristive devices by introducing an ion diffusion limiting layer Al 2 O 3 at the TiN/TaO x interface in order to satisfy the different requirements of various applications. This study could provide clues to the optimization of memristive devices for future neuromorphic and logic applications.
Investigation of Total Ionizing Dose (TID)Effect on High-Voltage Circuits in Flash Memory

Da-wei YANG,Li-fang LIU,Feng-ying QIAO,Hong LU,Li-yang PAN

DOI: https://doi.org/10.3969/j.issn.1002-2279.2014.06.002

2014-01-01

Microprocessors

Abstract:TheTIDradiationdegradationofhigh-voltagecircuitsintheflashmemorycircuitsystem is studied.We evaluates the effect of TID radiation to the internal high -voltage charge pumpings and their periphery circuits.The results show that the functional failures of charge pumping circuits are induced by the increasing leakage of memory array and high-voltage transistors after radiation,and leads to operation failure from the programming.
Negative Photoconductance Effect: An Extension Function of the TiO x ‐Based Memristor

Guangdong Zhou,Bai Sun,Xiaofang Hu,Linfeng Sun,Zhuo Zou,Bo Xiao,Wuke Qiu,Bo Wu,Jie Li,Juanjuan Han,Liping Liao,Cunyun Xu,Gang Xiao,Lihua Xiao,Jianbo Cheng,Shaohui Zheng,Lidan Wang,Qunliang Song,Shukai Duan

DOI: https://doi.org/10.1002/advs.202003765

IF: 15.1

2021-05-06

Advanced Science

Abstract:The negative photoconductance (NPC) effect, defined as an increase in resistance upon exposure to illumination, holds great potential for application in photoelectric devices. A prepared memristor with the structure of Ag|graphene quantum dots (GQDs)|TiOx|F-doped SnO2 exhibits typical bipolar resistive switching (RS) memory behavior. The NPC effect is impressively observed in the high resistance state branch of the RS memory, enabling the memristor function to be extended to both memory logic display and multistate data storage. The observed NPC effect is attributed to the excitation, migration, and compensation of oxygen vacancy at the GQDs/TiOx interface, at which the electron transportation is efficiently restricted because of the variation in the charge distribution and electrostatic potential under illumination. Experiments, theoretical calculations, and physical models are used to provide engineer the interface with the aim of building the NPC effect in the memristive device. These results unveil a new horizon on extending the functionality of the memristor.

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry

Total Ionizing Dose Effect on Low On/off Switching Ratio TiO2 Memristive Memories

Total Ionizing Dose (TID) Effects on $\hbox{tao}_{x}$ -Based Resistance Change Memory

The impact of oxidation voltage on the switching characteristics of Ag/TiO2/Ti nanotube memristor

A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memory

Total ionizing dose (TID) effects of γ ray radiation on switching behaviors of Ag/AlO x /Pt RRAM device.

Optimization of the Cycle Numbers of TiO 2 Resistive Random-Access Memory Devices by Annealing

Effect of voltage polarity and amplitude on electroforming of TiO2 based memristive devices.

Interfacial reaction induced digital-to-analog resistive switching in TiO2-based memory devices

Total-Ionizing-Dose Effects on Resistance Stability of Programmable Metallization Cell Based Memory and Selectors

Total Ionizing Radiation Effects of 2-T SONOS for 130 Nm/4 Mb NOR Flash Memory Technology

Improvement Of Resistive Switching Properties In Zro2-Based Reram With Implanted Ti Ions

Resistive switching and synaptic learning performance of a TiO2 thin film based device prepared by sol–gel and spin coating techniques

Degradation Characteristics of Resistive Switching Memory Devices Correlated with Electric Field Induced Ion-Migration Effect of Anode

Metal/TiO 2 Interfaces for Memristive Switches

Nonvolatile resistive switching memory behavior of the TiOx-based memristor

Nonvolatile behavior of resistive switching memory in Ag/WO x /TiO y /ITO device based on WO x /TiO y heterojunction

Observation of Two Resistance Switching Modes in TiO2memristive Devices Electroformed at Low Current

Improvement of Resistive Switching Properties in <formula formulatype="inline"><tex Notation="TeX">$ \hbox{ZrO}_{2}$</tex></formula>-Based <emphasis emphasistype="roman">ReRAM</emphasis> With Implanted Ti Ions

Engineering resistive switching behavior in TAO<inf>x</inf> based memristive devices for non-von Neuman computing applications

Investigation of Total Ionizing Dose (TID)Effect on High-Voltage Circuits in Flash Memory

Negative Photoconductance Effect: An Extension Function of the TiO x ‐Based Memristor