Abstract:In order to obtain high-quality through-silicon via (TSV) arrays for high voltage applications, we optimized the fabrication processes of the Si holes, evaluated the dielectric layers, carried out hole filling by Cu plating, and detected the final structure and electric properties of the TSVs. The Si through-hole array was fabricated in an 8-inch Si substrate as follows: First, a blind Si hole array was formed by the Si deep reactive etching (DRIE) technique using the Bosch process, but with the largest width of the top scallops reduced to 540 nm and the largest notch elimidiameternated by backside grinding, which also opens the bottom ends of the Si blind holes and forms 500-μm-deep Si through holes. Then, the sidewalls of the Si holes were further smoothed by a combination of thermal oxidation and wet etching of the thermal oxide. The insulating capability of the dielectric layers was evaluated prior to metal filling by using a test kit. The metal filling of the through holes was carried out by bottom-up Cu electroplating and followed by annealing at 300 °C for 1 h to release the electroplating stress and to prevent possible large metal thermal expansion in subsequent high-temperature processes. The TSV arrays with different hole diameters and spacing were detected: no visible defects or structure peeling was found by scanning electron microscopy (SEM) observations, and no detectable interdiffusion between Cu and the dielectric layers was detected by energy dispersive X-ray (EDX) analyses. Electric tests indicated that the leakage currents between two adjacent TSVs were as low as 6.80 × 10−10 A when a DC voltage was ramped up from 0 to 350 V, and 2.86 × 10−9 A after a DC voltage was kept at 100 V for 200 s.

Cu pumping effect under different annealing conditions

Effects of Post-Cmp Annealing on TSV Cu Protrusion and Leakage Current

Study on the behaviors of Cu filling in special through-silicon-vias by the simulation of electric field distribution

Research on Effect of Annealing on Copper Deposited by Electroplating in High Density TSV

Effect of Copper TSV Annealing on Via Protrusion for TSV Wafer Fabrication

Investigate the Microstructure Changes in Cu Through-Silicon Vias (tsvs) under Thermal Process

Influence of inhomogeneous anisotropic Copper grains in TSV on the thermo-mechanical behaviors in the annealing process

Investigations of Annealing Effect on TSV CMP

Influence of Copper Pumping on Integrity and Stress of Through-Silicon Vias

Influence of Temperature on Pumping Rate and Crystalline Grain of Copper Filler in Through-Silicon Vias

Optimization of Cu protrusion of wafer-to-wafer hybrid bonding for HBM packages application

Modeling and Characterization of Annealing Effect on the Cu Protrusion and Thermomechanically Behaviors of Through Glass Via

CU seed, CMP process development and via resistance extraction in through silicon via technology

Copper Chemical Mechanical Polishing and Wafer Thinning with Temporary Bonding for Through Silicon Via Interconnect

Influence of annealing conditions on the mechanical and microstructural behavior of electroplated Cu-TSV

Reliability Simulation Analysis of TSV Structure in Silicon Interposer under Temperature Cycling

Effect of Rapid Thermal Processing on High Temperature Oxygen Precipitation Behaviour in Czochralski Silicon Wafer

The Effect of Inhibitors on the Electrochemical Deposition of Copper Through-silicon Via and its CMP Process Optimization

Process Optimization and Performance Evaluation of TSV Arrays for High Voltage Application

Cu electroplating chemistry and process enabling rapid TSV filling with long bath life

Extrusion Suppression of TSV Filling Metal by Cu-W Electroplating for Three-Dimensional Microelectronic Packaging