Abstract:To date, many materials have been successfully grown on substrates through van der Waals epitaxy without adhering to the constraint of lattice matching as is required for traditional chemical epitaxy. However, for elemental semiconductors such as Ge, this has been challenging and therefore it has not been achieved thus far. In this paper, we report the observation of Ge epitaxially grown on mica at a narrow substrate temperature range around 425 °C. Despite the large lattice mismatch (23%) and the lack of high in-plane symmetry in the mica surface, an epitaxial Ge film with [111] out-of-plane orientation is observed. Crystallinity and electrical properties degrade upon deviation from the ideal growth temperature, as shown by Raman spectroscopy, X-ray diffraction, and Hall effect measurements. X-ray pole figure analysis reveals that there exist multiple rotational domains in the epitaxial Ge film with dominant in-plane orientations between Ge1¯10 and mica[100] of (20n)°, where n = 0, 1, 2, 3, 4, 5. A superlattice area mismatch model was used to account for the likelihood of the in-plane orientation formation and was found to be qualitatively consistent with the observed dominant orientations. Our observation of Ge epitaxy with one out-of-plane growth direction through van der Waals forces is a step toward the growth of single crystal Ge films without the constraint in the lattice and symmetry matches with the substrates.

Rapid-melting-growth of Ge on insulator using Cobalt (Co) induced-crystallized Ge as the seed for lateral growth

Rapid Melt Growth of Germanium Crystals with Self-Aligned Microcrucibles on Si Substrates

Ni induced lateral crystallization of high density Ge-dots/Si heterostructures

Characterization of a Czochralski Grown Silicon Crystal Doped with 1020 Cm‐3 Germanium

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

Microstructures of Ge-dots/Si Multilayered Structures Fabricated by Ni-induced Lateral Crystallization

Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions

Study on crystal growth of Ge/Si quantum dots at different Ge deposition by using magnetron sputtering technique

Recrystallization properties of polycrystalline GeSi on SiO2

Heteroepitaxial Growth of Ge Films on Si Substrates by Molecular-Beam Epitaxy

A Very Low Temperature Single Crystal Germanium Growth Process on Insulating Substrate Using Ni-Induced Lateral Crystallization for Three-Dimensional Integrated Circuits

Control of Ge island coalescence for the formation of nanowires on silicon.

The Recrystallization Properties of Poly-Ge x Si 1-x ON SiO 2 /Si

The Recrystallization Properties of Poly-Ge<sub>x</sub>Si<sub>1-x</sub>ON SiO<sub>2</sub>/Si

The Growth and In-Situ Doping of SiGe/Si Strained Heterostructures by RTP/VLP-CVD

Metal-Induced Grown Poly-SiGe by SiGe Heteroepitaxy on Ni Disilicide

Growth and doping of silicon carbide with germanium: a review

Island-growth of SiCGe films on SiC

Growth of Quasi-Single-Crystal Silicon–Germanium Thin Films on Glass Substrates by Continuous Wave Laser Lateral Crystallization

Van Der Waals Epitaxy of Ge Films on Mica

Growth of Ge-Si strained layers and DC XRD study on epitaxial films