Understanding Thickness-Dependent Charge Transport in Pentacene Transistors by Low-Frequency Noise

yong xu,chuan liu,william scheideler,songlin li,wenwu li,yenfu lin,francis balestra,gerard ghibaudo,kazuhito tsukagoshi
DOI: https://doi.org/10.1109/LED.2013.2277613
2013-01-01
Abstract:Close correlation between low-frequency noise and charge transport in pentacene transistors is observed. The trap density evolving with pentacene deposition reveals transformation of growth phase and different transport mechanisms. It explains the greatly altered mobility and contact resistance in which the upper surface's trapping plays an important role. Inspecting contact noise shows high density of traps at contacts that result possibly from pyramid like growth of pentacene or contact damage or both.
What problem does this paper attempt to address?