Study of microscopic mechanisms in HAT-CN/NPB interface devices under consideration of trap action
Keao Peng,Yunxia Guan,Shuang Xu,Aobo Zhao,Pengyu Zhu,Yimeng Fan,Lijia Chen,Lianbin Niu
DOI: https://doi.org/10.1080/00268976.2024.2395445
2024-08-30
Molecular Physics
Abstract:Traps within semiconductor devices are crucial in determining the device performance. Identifying the root cause of trap generation necessitates a thorough investigation of the underlying micro-mechanisms. This study presents the current density–voltage (J-V) characteristic curves for devices employing HAT-CN/NPB as the interface material. The presence of traps in the devices is confirmed by fitting the power-law relationship J∝(V−V i ) m+1 . Subsequent investigation employs the magnetic effect as a diagnostic tool, uncovering that the TPI process generates distinct substates, which markedly influence the device performance. The interaction between a trap-bound triplet exciton and a free polariton leads to the formation of double-state trions, thereby enhancing device luminous intensity. In contrast, the interaction of a free triplet exciton with a bound polariton yields quartet trions, which impede charge transport, as demonstrated by the analysis of magneto-conductance amplitude and positive and negative in this study. This manuscript integrates findings from the TPI process, photoelectric data, and magnetic effect data to elucidate the device response to traps.
chemistry, physical,physics, atomic, molecular & chemical