Enhanced Spin Injection into Single Layer Graphene with Atomically Smooth MgO Barrier

Han, Wei,Pi, K.,McCreary, K.M.,Yan Li

DOI: https://doi.org/10.1109/drc.2010.5551950

2010-01-01

Abstract:Atomically smooth MgO barrier on SLG and tunneling spin injection into SLG have been achieved. A large non-local MR of 130 Ω with a large spin injection efficiency of 31% is reported. These achievements are important advances for graphene spintronics.

What problem does this paper attempt to address?

Tunneling Spin Injection into Single Layer Graphene.

Wei Han,K. Pi,K. M. McCreary,Yan Li,Jared J. I. Wong,A. G. Swartz,R. K. Kawakami

DOI: https://doi.org/10.1103/physrevlett.105.167202

IF: 8.6

2010-01-01

Physical Review Letters

Abstract:We achieve tunneling spin injection from Co into single layer graphene (SLG) using TiO₂ seeded MgO barriers. A nonlocal magnetoresistance (ΔR(NL)) of 130 Ω is observed at room temperature, which is the largest value observed in any material. Investigating ΔR(NL) vs SLG conductivity from the transparent to the tunneling contact regimes demonstrates the contrasting behaviors predicted by the drift-diffusion theory of spin transport. Furthermore, tunnel barriers reduce the contact-induced spin relaxation and are therefore important for future investigations of spin relaxation in graphene.
Enhanced Spin Injection Efficiency and Extended Spin Lifetimes in Graphene Spin Valves

Wei Han,J. R. Chen,K. M. McCreary,H. Wen,R. K. Kawakami

DOI: https://doi.org/10.1117/12.901199

2011-01-01

Abstract:Enhanced spin injection efficiency and extended spin lifetimes are achieved in graphene spin valves. Spin injection efficiency is enhanced via tunneling spin injection into graphene through an MgO barrier. A large nonlocal magetoresistance of 130 Omega is observed for a single layer graphene (SLG) spin valve at room temperature (RT) with spin injection efficiency of similar to 26-30%. Extended spin lifetimes are observed using tunneling contact to suppress the contact induced spin relaxation. In SLG, spin lifetime as long as 771 ps is observed at RT. In bilayer graphene (BLG), we observe the spin lifetime of 6.2 ns at 20 K, which is the longest value reported in any graphene spin valve. Furthermore, contrasting spin relaxation behaviors are observed in SLG and BLG, which suggests that Elliot-Yafet spin relaxation dominates in SLG at low temperatures, while Dyakonov-Perel spin relaxation dominates in BLG at low temperatures.
Enhanced spin accumulation at room temperature in graphene spin valves with amorphous carbon interfacial layers

I. Neumann,M. V. Costache,G. Bridoux,J. F. Sierra,S. O. Valenzuela

DOI: https://doi.org/10.1063/1.4820586

2015-06-15

Abstract:We demonstrate a large enhancement of the spin accumulation in monolayer graphene following electron-beam induced deposition of an amorphous carbon layer at the ferromagnet-graphene interface. The enhancement is 10^4-fold when graphene is deposited onto poly(methyl metacrylate) (PMMA) and exposed with sufficient electron-beam dose to cross-link the PMMA, and 10^3-fold when graphene is deposited directly onto SiO2 and exposed with identical dose. We attribute the difference to a more efficient carbon deposition in the former case due to an increase in the presence of compounds containing carbon, which are released by the PMMA. The amorphous carbon interface can sustain very large current densities without degrading, which leads to very large spin accumulations exceeding 500 microeVs at room temperature.

Mesoscale and Nanoscale Physics
Spin and charge transport in graphene-based spin transport devices with Co/MgO spin injection and spin detection electrodes

F. Volmer,M. Drögeler,G. Güntherodt,C. Stampfer,B. Beschoten

DOI: https://doi.org/10.1016/j.synthmet.2015.07.007

2015-06-25

Abstract:In this review we discuss spin and charge transport properties in graphene-based single-layer and few-layer spin-valve devices. We give an overview of challenges and recent advances in the field of device fabrication and discuss two of our fabrication methods in more detail which result in distinctly different device performances. In the first class of devices, Co/MgO electrodes are directly deposited onto graphene which results in rough MgO-to-Co interfaces and favor the formation of conducting pinholes throughout the MgO layer. We show that the contact resistance area product (R$_c$A) is a benchmark for spin transport properties as it scales with the measured spin lifetime in these devices indicating that contact-induced spin dephasing is the bottleneck for spin transport even in devices with large R$_c$A values. In a second class of devices, Co/MgO electrodes are first patterned onto a silicon substrate. Subsequently, a graphene-hBN heterostructure is directly transferred onto these prepatterned electrodes which provides improved interface properties. This is seen by a strong enhancement of both charge and spin transport properties yielding charge carrier mobilities exceeding 20000 cm$^2$/(Vs) and spin lifetimes up to 3.7 ns at room temperature. We discuss several shortcomings in the determination of both quantities which complicates the analysis of both extrinsic and intrinsic spin scattering mechanisms. Furthermore, we show that contacts can be the origin of a second charge neutrality point in gate dependent resistance measurements which is influenced by the quantum capacitance of the underlying graphene layer.

Mesoscale and Nanoscale Physics
Efficient spin injection into graphene through a tunnel barrier: overcoming the spin conductance mismatch

Qingyun Wu,Lei Shen,Zhaoqiang Bai,Minggang Zeng,Ming Yang,Zhigao Huang,Yuan Ping Feng

DOI: https://doi.org/10.48550/arXiv.1411.0779

2014-11-04

Materials Science

Abstract:Employing first-principles calculations, we investigate efficiency of spin injection from a ferromagnetic (FM) electrode (Ni) into graphene and possible enhancement by using a barrier between the electrode and graphene. Three types of barriers, h-BN, Cu(111), and graphite, of various thickness (0-3 layers) are considered and the electrically biased conductance of the Ni/Barrier/Graphene junction are calculated. It is found that the minority spin transport channel of graphene can be strongly suppressed by the insulating h-BN barrier, resulting in a high spin injection efficiency. On the other hand, the calculated spin injection efficiencies of Ni/Cu/Graphene and Ni/Graphite/Graphene junctions are low, due to the spin conductance mismatch. Further examination on the electronic structure of the system reveals that the high spin injection efficiency in the presence of a tunnel barrier is due to its asymmetric effects on the two spin states of graphene.
Almost Perfect Spin Filtering in Graphene-Based Magnetic Tunnel Junctions

Victor Zatko,Simon M-M Dubois,Florian Godel,Marta Galbiati,Julian Peiro,Anke Sander,Cécile Carretero,Aymeric Vecchiola,Sophie Collin,Karim Bouzehouane,Bernard Servet,Frédéric Petroff,Jean-Christophe Charlier,Marie-Blandine Martin,Bruno Dlubak,Pierre Seneor

DOI: https://doi.org/10.1021/acsnano.2c03625

IF: 17.1

2022-09-27

ACS Nano

Abstract:We report on large spin-filtering effects in epitaxial graphene-based spin valves, strongly enhanced in our specific multilayer case. Our results were obtained by the effective association of chemical vapor deposited (CVD) multilayer graphene with a high quality epitaxial Ni(111) ferromagnetic spin source. We highlight that the Ni(111) spin source electrode crystallinity and metallic state are preserved and stabilized by multilayer graphene CVD growth. Complete nanometric spin valve junctions are fabricated using a local probe indentation process, and spin properties are extracted from the graphene-protected ferromagnetic electrode through the use of a reference Al2O3/Co spin analyzer. Strikingly, spin-transport measurements in these structures give rise to large negative tunnel magneto-resistance TMR = -160%, pointing to a particularly large spin polarization for the Ni(111)/Gr interface PNi/Gr, evaluated up to -98%. We then discuss an emerging physical picture of graphene-ferromagnet systems, sustained both by experimental data and ab initio calculations, intimately combining efficient spin filtering effects arising (i) from the bulk band structure of the graphene layers purifying the extracted spin direction, (ii) from the hybridization effects modulating the amplitude of spin polarized scattering states over the first few graphene layers at the interface, and (iii) from the epitaxial interfacial matching of the graphene layers with the spin-polarized Ni surface selecting well-defined spin polarized channels. Importantly, these main spin selection effects are shown to be either cooperating or competing, explaining why our transport results were not observed before. Overall, this study unveils a path to harness the full potential of low Resitance.Area (RA) graphene interfaces in efficient spin-based devices.
Tunnel spin injection into graphene using Al2O3 barrier grown by atomic layer deposition on functionalized graphene surface

Takehiro Yamaguchi,Satoru Masubuchi,Kazuyuki Iguchi,Rai Moriya,Tomoki Machida

DOI: https://doi.org/10.1016/j.jmmm.2011.09.031

2011-10-06

Abstract:We demonstrate electrical tunnel spin injection from a ferromagnet to graphene through a high-quality Al2O3 grown by atomic layer deposition (ALD). The graphene surface is functionalized with a self-assembled monolayer of 3,4,9,10-perylene tetracarboxylic acid (PTCA) to promote adhesion and growth of Al2O3 with a smooth surface. Using this composite tunnel barrier of ALD-Al2O3 and PTCA, a spin injection signal of 30 ohm has been observed from non-local magnetoresistance measurements at 45 K, revealing potentially high performance of ALD-Al2O3/PTCA tunnel barrier for spin injection into graphene.

Mesoscale and Nanoscale Physics
Suppression of contact-induced spin dephasing in graphene/MgO/Co spin-valve devices by successive oxygen treatments

F. Volmer,M. Drögeler,E. Maynicke,N. von den Driesch,M. L. Boschen,G. Güntherodt,C. Stampfer,B. Beschoten

DOI: https://doi.org/10.1103/PhysRevB.90.165403

2014-08-07

Abstract:By successive oxygen treatments of graphene non-local spin-valve devices we achieve a gradual increase of the contact resistance area products ($R_cA$) of Co/MgO spin injection and detection electrodes and a transition from linear to non-linear characteristics in the respective differential dV-dI-curves. With this manipulation of the contacts both spin lifetime and amplitude of the spin signal can significantly be increased by a factor of seven in the same device. This demonstrates that contact-induced spin dephasing is the bottleneck for spin transport in graphene devices with small $R_cA$ values. With increasing $R_cA$ values, we furthermore observe the appearance of a second charge neutrality point (CNP) in gate dependent resistance measurements. Simultaneously, we observe a decrease of the gate voltage separation between the two CNPs. The strong enhancement of the spin transport properties as well as the changes in charge transport are explained by a gradual suppression of a Co/graphene interaction by improving the oxide barrier during oxygen treatment.

Mesoscale and Nanoscale Physics
Spin Transport in Graphite and Graphene Spin Valves

Wei Han,K. Pi,W. H. Wang,K. M. McCreary,Yan Li,W. Bao,P. Wei,J. Shi,C. N. Lau,R. K. Kawakami

DOI: https://doi.org/10.1117/12.826705

2009-01-01

Abstract:Spin transport in graphene devices has been investigated in both local and non-local spin valve geometries. In the nonlocal measurement, spin transport and spin precession in single layer and bilayer graphene have both been achieved with transparent Co contacts. Gate controllable non-local spin signal was also demonstrated in this system. For the local graphite spin valve device, we report MR up to 12% for devices with tunneling contacts. We observe a correlation between the nonlinearity of the I-V curve and the presence of local MR and conclude that tunnel barriers can be employed to surmount the conductance mismatch problem in this system. These studies indicate that the improvement of tunnel barriers on graphene, especially to inhibit the formation of pinholes, is an important step to achieve more efficient
Large-Scale Fabrication of Bn Tunnel Barriers for Graphene Spintronics

Wangyang Fu,Peter Makk,Romain Maurand,Matthias Braeuninger,Christian Schoenenberger

DOI: https://doi.org/10.1063/1.4893578

IF: 2.877

2014-01-01

Journal of Applied Physics

Abstract:We have fabricated graphene spin-valve devices utilizing scalable materials made from chemical vapor deposition (CVD). Both the spin-transporting graphene and the tunnel barrier material are CVD-grown. The tunnel barrier is realized by Hexagonal boron nitride, used either as a monolayer or bilayer and placed over the graphene. Spin transport experiments were performed using ferromagnetic contacts deposited onto the barrier. We find that spin injection is still greatly suppressed in devices with a monolayer tunneling barrier due to resistance mismatch. This is, however, not the case for devices with bilayer barriers. For those devices, a spin relaxation time of ∼260 ps intrinsic to the CVD graphene material is deduced. This time scale is comparable to those reported for exfoliated graphene, suggesting that this CVD approach is promising for spintronic applications which require scalable materials.
Enhancement of spin current to charge current conversion in Ferromagnet/Graphene interface

Mahammad Tahir,Subhakanta Das,Mukul Gupta,Rohit Medwal,Soumik Mukhopadhyay

2024-05-25

Abstract:The use of graphene in spintronic devices is contingent on its ability to convert a spin current into a charge current. We have systematically investigated the spin pumping induced spin-to-charge current conversion at the Graphene/FM interface and the effect of interface modification through high spin orbit coupling (SOC) material (Pt) as an interlayer (IL) of varying thicknesses by using broadband FMR spectroscopy. The spin mixing conductance is enhanced from $1.66 \times 10^{18}$ m$^{-2}$ to $2.72 \times 10^{18}$ m$^{-2}$ whereas the spin current density is enhanced from 0.135$\pm $0.003 to 0.242$\pm$0.004 MA/m$^{2}$ at the Graphene/FM interface due to the interface modification using high SOC material Pt as an interlayer. The spin current to charge current conversion efficiency turns out to be $\approx 0.003$ nm for the Graphene/FM interface. These findings support the idea that Graphene in combination with high SOC material (Pt) could be a potential candidate for spintronic applications, specifically for spin-torque-based memory applications.

Mesoscale and Nanoscale Physics
Large-Area Intercalated 2D-Pb/Graphene Heterostructure as a Platform for Generating Spin-Orbit Torque

Alexander Vera,Boyang Zheng,Wilson Yanez,Kaijie Yang,Seong Yeoul Kim,Xinglu Wang,Jimmy C. Kotsakidis,Hesham El-Sherif,Gopi Krishnan,Roland J. Koch,T. Andrew Bowen,Chengye Dong,Yuanxi Wang,Maxwell Wetherington,Eli Rotenberg,Nabil Bassim,Adam L. Friedman,Robert M. Wallace,Chaoxing Liu,Nitin Samarth,Vincent H. Crespi,Joshua A. Robinson

DOI: https://doi.org/10.1021/acsnano.4c04075

2024-08-20

Abstract:A scalable platform to synthesize ultrathin heavy metals may enable high efficiency charge-to-spin conversion for next-generation spintronics. Here we report the synthesis of air-stable, epitaxially registered monolayer Pb underneath bilayer graphene on SiC (0001) by confinement heteroepitaxy (CHet). Diffraction, spectroscopy, and microscopy reveal CHet-based Pb intercalation predominantly exhibits a mottled hexagonal superstructure due to an ordered network of Frenkel-Kontorova-like domain walls. The system's air stability enables ex-situ spin torque ferromagnetic resonance (ST-FMR) measurements that demonstrate charge-to-spin conversion in graphene/Pb/ferromagnet heterostructures with a 1.5x increase in the effective field ratio compared to control samples.

Materials Science
Enhancement of Spin Injection into Graphene by Water Dipping

K. M. McCreary,Hua Wen,H. Yu,Wei Han,E. Johnston-Halperin,R. K. Kawakami

DOI: https://doi.org/10.48550/arXiv.1108.0380

2011-08-01

Materials Science

Abstract:We immerse single layer graphene spin valves into purified water for a short duration (<1 min) and investigate the effect on spin transport. Following water immersion, we observe an enhancement in nonlocal magnetoresistance. Additionally, the enhancement of spin signal is correlated with an increase in junction resistance, which produces an increase in spin injection efficiency. This study provides a simple way to improve the signal magnitude and establishes the robustness of graphene spin valves to water exposure, which enables future studies involving chemical functionalization in aqueous solution.
Nanosecond spin lifetimes in single- and few-layer graphene-hBN heterostructures at room temperature

Marc Drögeler,Frank Volmer,Maik Wolter,Bernat Terrés,Kenji Watanabe,Takashi Taniguchi,Gernot Güntherodt,Christoph Stampfer,Bernd Beschoten

DOI: https://doi.org/10.1021/nl501278c

2014-06-10

Abstract:We present a new fabrication method of graphene spin-valve devices which yields enhanced spin and charge transport properties by improving both the electrode-to-graphene and graphene-to-substrate interface. First, we prepare Co/MgO spin injection electrodes onto Si$^{++}$/SiO$_2$. Thereafter, we mechanically transfer a graphene-hBN heterostructure onto the prepatterned electrodes. We show that room temperature spin transport in single-, bi- and trilayer graphene devices exhibit nanosecond spin lifetimes with spin diffusion lengths reaching 10$\mu$m combined with carrier mobilities exceeding 20,000 cm$^2$/Vs.

Mesoscale and Nanoscale Physics
Large-scale BN tunnel barriers for graphene spintronics

Wangyang Fu,Péter Makk,Romain Maurand,Matthias Bräuninger,Christian Schönenberger

DOI: https://doi.org/10.1063/1.4893578

2014-07-06

Abstract:We have fabricated graphene spin-valve devices utilizing scalable materials made from chemical vapor deposition (CVD). Both the spin-transporting graphene and the tunnel barrier material are CVD-grown. The tunnel barrier is realized by h-BN, used either as a monolayer or bilayer and placed over the graphene. Spin transport experiments were performed using ferromagnetic contacts deposited onto the barrier. We find that spin injection is still greatly suppressed in devices with a monolayer tunneling barrier due to resistance mismatch. This is, however, not the case for devices with bilayer barriers. For those devices, a spin relaxation time of 260 ps intrinsic to the CVD graphene material is deduced. This time scale is comparable to those reported for exfoliated graphene, suggesting that this CVD approach is promising for spintronic applications which require scalable materials.

Mesoscale and Nanoscale Physics,Materials Science
Gate‐Tunable Spin Hall Effect in Trilayer Graphene/Group‐IV Monochalcogenide van der Waals Heterostructures

Haozhe Yang,Zhendong Chi,Garen Avedissian,Eoin Dolan,Muthumalai Karuppasamy,Beatriz Martín‐García,Marco Gobbi,Zdenek Sofer,Luis E. Hueso,Fèlix Casanova

DOI: https://doi.org/10.1002/adfm.202404872

IF: 19

2024-04-27

Advanced Functional Materials

Abstract:The spin Hall effect in trilayer graphene proximitized with tin sulfide (SnS), a group‐IV monochalcogenide, is observed with non‐local spin precession experiments up to room temperature. The output of the spin‐charge interconversion as well as the spin Hall angle is gate tunable and exhibits a maximum when the Fermi level is around the charge neutrality point of the graphene. Spintronic devices require materials that facilitate effective spin transport, generation, and detection. In this regard, graphene emerges as an ideal candidate for long‐distance spin transport owing to its minimal spin‐orbit coupling, which, however, limits its capacity for effective spin manipulation. This problem can be overcome by putting spin‐orbit coupling materials in close contact with graphene leading to spin‐orbit proximity and, consequently, efficient spin‐to‐charge conversion through mechanisms such as the spin Hall effect. Here, the gate‐dependent spin Hall effect in trilayer graphene proximitized with tin sulfide (SnS) is reported and quantified, a group‐IV monochalcogenide that has recently been predicted to be a viable alternative to transition‐metal dichalcogenides for inducing strong spin‐orbit coupling in graphene. The spin Hall angle exhibits a maximum around the charge neutrality point of graphene up to room temperature. The findings expand the library of materials that induce spin‐orbit coupling in graphene to a new class, group‐IV monochalcogenides, thereby highlighting the potential of 2D materials to pave the way for the development of innovative spin‐based devices and future technological applications.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Spin-dependent Transport Properties in Covalent–organic Molecular Device with Graphene Nanoribbon Electrodes

Wei Chen,Weiwei Mao,Baoan Bian,Ning Xu,Runfeng Chen,Xing-ao Li,Lianhui Wang

DOI: https://doi.org/10.1016/j.comptc.2016.07.015

IF: 2.292

2016-01-01

Computational and Theoretical Chemistry

Abstract:Based on the first-principles method, the spin-dependent transport properties of covalent-organic molecular device embedded between two zigzag-edge graphene nanoribbon (ZGNR) electrodes have been studied. It is revealed that in the parallel (P) spin configuration of two ZGNR electrodes, the molecular device exhibits a robust spin filtering effect (up to 100%). In another case of antiparallel (AP) spin configuration, dual spin filtering, spin rectifying as well as negative differential resistance (NDR) effects were discovered. These calculated results offer useful ideas for designing high-performance ZGNR-based molecular devices. (C) 2016 Elsevier B.V. All rights reserved.
Opto-Valleytronic Spin Injection in Monolayer MoS2/Few-Layer Graphene Hybrid Spin Valves

Yunqiu,Luo,Jinsong Xu,Tiancong Zhu,Guanzhong Wu,Elizabeth J. McCormick,Wenbo Zhan,Mahesh R. Neupane,Roland K. Kawakami

DOI: https://doi.org/10.48550/arXiv.1705.09371

2017-05-25

Mesoscale and Nanoscale Physics

Abstract:Two dimensional (2D) materials provide a unique platform for spintronics and valleytronics due to the ability to combine vastly different functionalities into one vertically-stacked heterostructure, where the strengths of each of the constituent materials can compensate for the weaknesses of the others. Graphene has been demonstrated to be an exceptional material for spin transport at room temperature, however it lacks a coupling of the spin and optical degrees of freedom. In contrast, spin/valley polarization can be efficiently generated in monolayer transition metal dichalcogenides (TMD) such as MoS2 via absorption of circularly-polarized photons, but lateral spin or valley transport has not been realized at room temperature. In this letter, we fabricate monolayer MoS2/few-layer graphene hybrid spin valves and demonstrate, for the first time, the opto-valleytronic spin injection across a TMD/graphene interface. We observe that the magnitude and direction of spin polarization is controlled by both helicity and photon energy. In addition, Hanle spin precession measurements confirm optical spin injection, spin transport, and electrical detection up to room temperature. Finally, analysis by a one-dimensional drift-diffusion model quantifies the optically injected spin current and the spin transport parameters. Our results demonstrate a 2D spintronic/valleytronic system that achieves optical spin injection and lateral spin transport at room temperature in a single device, which paves the way for multifunctional 2D spintronic devices for memory and logic applications.
Tunable Spin-Orbit Interaction in Trilayer Graphene Exemplified in Electric-Double-Layer Transistors

Zhuoyu Chen,Hongtao Yuan,Yanfeng Zhang,Kentaro Nomura,Teng Gao,Yabo Gao,Hidekazu Shimotani,Zhongfan Liu,Yoshihiro Iwasa

DOI: https://doi.org/10.1021/nl204012c

IF: 10.8

2012-01-01

Nano Letters

Abstract:Taking advantage of ultrahigh electric field generated in electric-double-layer transistors (EDLTs), we investigated spin-orbit interaction (SOI) and its modulation in epitaxial trilayer graphene. It was found in magnetotransport that the dephasing length L(φ) and spin relaxation length L(so) of carriers can be effectively modulated with gate bias. As a direct result, SOI-induced weak antilocalization (WAL), together with a crossover from WAL to weak localization (WL), was observed at near-zero magnetic field. Interestingly, among existing localization models, only the Iordanskii-Lyanda-Geller-Pikus theory can successfully reproduce the obtained magnetoconductance well, serving as evidence for gate tuning of the weak but distinct SOI in graphene. Realization of SOI and its large tunability in the trilayer graphene EDLTs provides us with a possibility to electrically manipulate spin precession in graphene systems without ferromagnetics.
Enhancement of spin accumulation in few-layer graphene lateral spin valve

Wenyu Liu,Zuoquan Tan,Gehui Zhang,Meijie Zhu,Hua Xu,Le Wang

DOI: https://doi.org/10.1016/j.rinp.2022.105531

IF: 4.565

2022-06-01

Results in Physics

Abstract:Spin injection, spin accumulation and spin detection have been investigated in few-layer graphene lateral spin valves at room temperature. Compared to the zero value of spin accumulation signal in Co/Graphene/Co lateral spin valve even after thermal treatment, clear spin accumulation signals were observed in Co/MgO/Graphene/MgO/Co lateral spin valve after 270 oC thermal annealing. Our finding provides a robust way to achieve the spin injection in graphene lateral spin valves.

physics, multidisciplinary,materials science

Enhanced Spin Injection into Single Layer Graphene with Atomically Smooth MgO Barrier

Tunneling Spin Injection into Single Layer Graphene.

Enhanced Spin Injection Efficiency and Extended Spin Lifetimes in Graphene Spin Valves

Enhanced spin accumulation at room temperature in graphene spin valves with amorphous carbon interfacial layers

Spin and charge transport in graphene-based spin transport devices with Co/MgO spin injection and spin detection electrodes

Efficient spin injection into graphene through a tunnel barrier: overcoming the spin conductance mismatch

Almost Perfect Spin Filtering in Graphene-Based Magnetic Tunnel Junctions

Tunnel spin injection into graphene using Al2O3 barrier grown by atomic layer deposition on functionalized graphene surface

Suppression of contact-induced spin dephasing in graphene/MgO/Co spin-valve devices by successive oxygen treatments

Spin Transport in Graphite and Graphene Spin Valves

Large-Scale Fabrication of Bn Tunnel Barriers for Graphene Spintronics

Enhancement of spin current to charge current conversion in Ferromagnet/Graphene interface

Large-Area Intercalated 2D-Pb/Graphene Heterostructure as a Platform for Generating Spin-Orbit Torque

Enhancement of Spin Injection into Graphene by Water Dipping

Nanosecond spin lifetimes in single- and few-layer graphene-hBN heterostructures at room temperature

Large-scale BN tunnel barriers for graphene spintronics

Gate‐Tunable Spin Hall Effect in Trilayer Graphene/Group‐IV Monochalcogenide van der Waals Heterostructures

Spin-dependent Transport Properties in Covalent–organic Molecular Device with Graphene Nanoribbon Electrodes

Opto-Valleytronic Spin Injection in Monolayer MoS2/Few-Layer Graphene Hybrid Spin Valves

Tunable Spin-Orbit Interaction in Trilayer Graphene Exemplified in Electric-Double-Layer Transistors

Enhancement of spin accumulation in few-layer graphene lateral spin valve