Abstract:We have fabricated graphene spin-valve devices utilizing scalable materials made from chemical vapor deposition (CVD). Both the spin-transporting graphene and the tunnel barrier material are CVD-grown. The tunnel barrier is realized by h-BN, used either as a monolayer or bilayer and placed over the graphene. Spin transport experiments were performed using ferromagnetic contacts deposited onto the barrier. We find that spin injection is still greatly suppressed in devices with a monolayer tunneling barrier due to resistance mismatch. This is, however, not the case for devices with bilayer barriers. For those devices, a spin relaxation time of 260 ps intrinsic to the CVD graphene material is deduced. This time scale is comparable to those reported for exfoliated graphene, suggesting that this CVD approach is promising for spintronic applications which require scalable materials.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: how to use hexagonal boron nitride (h - BN) grown by chemical vapor deposition (CVD) as a tunnel barrier material to improve the performance of CVD - graphene - based spin - valve devices, especially to enhance their spin - transport properties. Specifically, the research aims to overcome the non - uniformity formed by existing oxide tunnel barriers on large - area graphene and the resulting low spin - injection efficiency. ### Problem Background: 1. **Superiority of Graphene**: Due to its low spin - orbit coupling, almost non - existent hyperfine interaction, and extremely high carrier mobility at room temperature, graphene is considered an ideal material for spintronics applications. 2. **Existing Challenges**: Although graphene performs well in spin - transport, most of the existing research focuses on high - quality epitaxial or exfoliated graphene and uses various oxide - based tunnel barriers. These methods are difficult to achieve large - scale production and application. 3. **Advantages and Challenges of CVD Graphene**: CVD graphene can provide large - area materials, which are suitable for large - scale production, but its spin - transport performance is affected by the quality of the tunnel barrier. In particular, oxide tunnel barriers are prone to form pinholes, resulting in low spin - injection efficiency. ### Research Objectives: - **Using CVD h - BN as a Tunnel Barrier**: By using CVD - grown h - BN as a tunnel barrier, the research team hopes to overcome the limitations of oxide tunnel barriers and achieve more uniform coverage and higher spin - injection efficiency. - **Evaluating Spin - Transport Properties**: Through experimental verification, the research team hopes to prove that the spin - valve devices combining CVD graphene and CVD h - BN can exhibit excellent spin - transport properties at room temperature and low temperatures, including longer spin - relaxation times and larger spin - diffusion lengths. ### Main Findings: - **Limited Effect of Single - layer h - BN**: For single - layer h - BN tunnel barriers, spin - injection is still suppressed due to resistance mismatch. - **Significant Improvement of Double - layer h - BN**: For double - layer h - BN tunnel barriers, the research team observed a spin - relaxation time of about 260 picoseconds, which is comparable to the time scale reported for exfoliated graphene samples, indicating that the system combining CVD graphene and CVD h - BN has good spin - transport performance. - **Consistency of Non - local and Local Measurements**: The research team also carried out non - local and local magnetoresistance measurements to further verify the spin - transport properties of the device. ### Conclusion: By using CVD h - BN as a tunnel barrier, the research team has successfully improved the spin - transport performance of CVD - graphene spin - valve devices, providing a new approach for future large - scale spintronics applications.

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