Tunnel spin injection into graphene using Al2O3 barrier grown by atomic layer deposition on functionalized graphene surface

Takehiro Yamaguchi,Satoru Masubuchi,Kazuyuki Iguchi,Rai Moriya,Tomoki Machida

DOI: https://doi.org/10.1016/j.jmmm.2011.09.031

2011-10-06

Abstract:We demonstrate electrical tunnel spin injection from a ferromagnet to graphene through a high-quality Al2O3 grown by atomic layer deposition (ALD). The graphene surface is functionalized with a self-assembled monolayer of 3,4,9,10-perylene tetracarboxylic acid (PTCA) to promote adhesion and growth of Al2O3 with a smooth surface. Using this composite tunnel barrier of ALD-Al2O3 and PTCA, a spin injection signal of 30 ohm has been observed from non-local magnetoresistance measurements at 45 K, revealing potentially high performance of ALD-Al2O3/PTCA tunnel barrier for spin injection into graphene.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: **How to achieve effective electrical spin injection from ferromagnets to graphene through high - quality Al₂O₃ tunneling barriers**. Specifically, the author hopes to improve the spin injection efficiency and quality by growing Al₂O₃ barriers on the functionalized graphene surface using atomic layer deposition (ALD) technology.

### Main problem background

1. **The application potential of graphene in spintronics**:
- Due to its unique electrical properties and band structure, graphene has received extensive attention in the fields of basic physics and applied physics.
- Graphene has great application prospects in spintronics because it is expected to have a very long spin diffusion length, which stems from its weak spin - orbit interaction and hyperfine interaction.

2. **Limitations of existing spin injection techniques**:
- In order to achieve efficient spin injection, researchers have tried various interface designs, including directly depositing ferromagnets on graphene, reducing the contact area, and inserting low - temperature - grown Al₂O₃ tunneling barriers, etc.
- Although some progress has been made, the existing spin injection efficiency is still lower than the theoretical expectation, and the spin lifetime is short, so further improvement is required.

3. **Advantages of ALD technology**:
- ALD is an emerging technology that can deposit smooth and high - quality oxide thin films and can control the thickness of the deposited layer at the atomic level.
- However, the clean graphene surface is inert to ALD precursors because there are no available dangling bonds. For this reason, the author used 3,4,9,10 - perylenetetracarboxylic dianhydride (PTCA) self - assembled monolayer (SAM) to functionalize the graphene surface to promote the growth of ALD - Al₂O₃.

### Main contributions of the paper

1. **Successfully achieved the preparation of ALD - Al₂O₃/PTCA composite tunneling barriers**:
- Using PTCA SAM improves the adhesion and growth quality of Al₂O₃ during the ALD process.

2. **Observed a significant non - local magnetoresistance (NLMR) signal**:
- At 45 K, the measured non - local magnetoresistance change (ΔRNL) is approximately 30 Ω, indicating that the ALD - Al₂O₃/PTCA composite tunneling barrier has potential high performance in spin injection.

3. **Verified the spin transport characteristics**:
- Through Hanle effect measurement, parameters such as injected spin polarization, spin relaxation time, spin diffusion constant, and spin diffusion length were extracted, further confirming the success of spin injection and transport.

In summary, this paper aims to significantly improve the spin injection efficiency and spin transport performance by improving the preparation method of ALD - Al₂O₃/PTCA composite tunneling barriers, providing a new approach for future graphene spintronics applications.