Abstract:The use of graphene in spintronic devices is contingent on its ability to convert a spin current into a charge current. We have systematically investigated the spin pumping induced spin-to-charge current conversion at the Graphene/FM interface and the effect of interface modification through high spin orbit coupling (SOC) material (Pt) as an interlayer (IL) of varying thicknesses by using broadband FMR spectroscopy. The spin mixing conductance is enhanced from $1.66 \times 10^{18}$ m$^{-2}$ to $2.72 \times 10^{18}$ m$^{-2}$ whereas the spin current density is enhanced from 0.135$\pm $0.003 to 0.242$\pm$0.004 MA/m$^{2}$ at the Graphene/FM interface due to the interface modification using high SOC material Pt as an interlayer. The spin current to charge current conversion efficiency turns out to be $\approx 0.003$ nm for the Graphene/FM interface. These findings support the idea that Graphene in combination with high SOC material (Pt) could be a potential candidate for spintronic applications, specifically for spin-torque-based memory applications.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: **How to enhance the conversion efficiency from spin current to charge current by introducing platinum (Pt), a material with high spin - orbit coupling (SOC), as an intermediate layer at the graphene/ferromagnet (FM) interface, thereby increasing the application potential of graphene in spintronic devices**. Specifically, the authors studied the following problems: 1. **Spin - pumping effect**: When the ferromagnetic layer is coupled with the non - magnetic layer, how the pure spin current generated by magnetization precession can be effectively converted into charge current at the graphene/FM interface. 2. **Effect of interface modification**: By inserting high - SOC material Pt with different thicknesses as an intermediate layer at the graphene/FM interface, study its influence on spin - mixing conductance and spin - current density. 3. **Conversion mechanism from spin current to charge current**: Explore the roles of the inverse Rashba - Edelstein effect (IREE) and the inverse spin - Hall effect (ISHE) in different interface structures, especially the relative contributions of these two effects in the graphene/Pt/FM interface. ### Main findings - **Increase in spin - mixing conductance**: By introducing the Pt intermediate layer, the spin - mixing conductance is increased from $1.66\times 10^{18}\, \text{m}^{-2}$ to $2.72\times 10^{18}\, \text{m}^{-2}$. - **Increase in spin - current density**: The spin - current density is increased from $0.135\pm 0.003\, \text{MA/m}^2$ to $0.242\pm 0.004\, \text{MA/m}^2$. - **Improvement in conversion efficiency**: The conversion efficiency from spin current to charge current is increased from about $0.003\, \text{nm}$ to $0.062\, \text{nm}$, especially after introducing the Pt intermediate layer. These results indicate that graphene combined with high - SOC materials (such as Pt) can significantly improve the conversion efficiency from spin current to charge current, making it a potential candidate material for spintronics applications (such as spin - torque - based memories).

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