Disease burden in four populations of dog and cat breeds compared to mixed-breed dogs and European shorthair cats.

S. Keijser,L. Meijndert,H. Fieten,B. J. Carrière,F. Steenbeek,Peter A. J. Leegwater,Jan Rothuizen,Mirjam Nielen

DOI: https://doi.org/10.1016/j.prevetmed.2017.02.016

IF: 3.372

2017-05-01

Preventive Veterinary Medicine

Abstract:

What problem does this paper attempt to address?

Spin Filter and Spin Valve in Ferromagnetic Graphene

Yu Song,Gang Dai

DOI: https://doi.org/10.1063/1.4921668

IF: 4

2015-01-01

Applied Physics Letters

Abstract:We propose and demonstrate that a EuO-induced and top-gated graphene ferromagnetic junction can be simultaneously operated as a spin filter and a spin valve. We attribute such a remarkable result to a coexistence of a half-metal band and a common energy gap for opposite spins in ferromagnetic graphene. We show that both the spin filter and the spin valve can be effectively controlled by a back gate voltage, and they survive for practical metal contacts and finite temperature. Specifically, larger single spin currents and on-state currents can be reached with contacts with work functions similar to graphene, and the spin filter can operate at higher temperature than the spin valve.
Theoretical prediction of perfect spin filtering at interfaces between close-packed surfaces of Ni or Co and graphite or graphene

V. M. Karpan,P. A. Khomyakov,A. A. Starikov,G. Giovannetti,M. Zwierzycki,M. Talanana,G. Brocks,J. van den Brink,P. J. Kelly

DOI: https://doi.org/10.1103/physrevb.78.195419

IF: 3.7

2008-11-19

Physical Review B

Abstract:The in-plane lattice constants of close-packed planes of fcc and hcp Ni and Co match that of graphite almost perfectly so that they share a common two-dimensional reciprocal space. Their electronic structures are such that they overlap in this reciprocal space for one spin direction only allowing us to predict perfect spin filtering for interfaces between graphite and (111) fcc or (0001) hcp Ni or Co. First-principles calculations of the scattering matrix show that the spin filtering is quite insensitive to amounts of interface roughness and disorder which drastically influence the spin-filtering properties of conventional magnetic tunnel junctions or interfaces between transition metals and semiconductors. When a single graphene sheet is adsorbed on these open d-shell transition-metal surfaces, its characteristic electronic structure, with topological singularities at the K points in the two-dimensional Brillouin zone, is destroyed by the chemical bonding. Because graphene bonds only weakly to Cu which has no states at the Fermi energy at the K point for either spin, the electronic structure of graphene can be restored by dusting Ni or Co with one or a few monolayers of Cu while still preserving the ideal spin-injection property.

physics, condensed matter, applied,materials science, multidisciplinary
A seamless graphene spin valve based on proximity to van der Waals magnet Cr$_2$Ge$_2$Te$_6$

Haozhe Yang,Marco Gobbi,Franz Herling,Van Tuong Pham,Francesco Calavalle,Beatriz Martín-García,Albert Fert,Luis E. Hueso,Fèlix Casanova

2024-08-11

Abstract:Pristine graphene is potentially an ideal medium to transport spin information. Proximity effects, where a neighbouring material is used to alter the properties of a material in adjacent (or proximitized) regions, can also be used in graphene to generate and detect spins by acquiring spin-orbit coupling or magnetic exchange coupling. However, the development of seamless spintronic devices that are based uniquely on proximity effects remains challenging. Here, we report a two-dimensional graphene spin valve that is enabled by proximity to the van der Waals magnet Cr$_2$Ge$_2$Te$_6$. Spin precession measurements show that graphene acquires both spin-orbit coupling and magnetic exchange coupling when interfaced with the Cr$_2$Ge$_2$Te$_6$. This leads to spin generation by both electrical spin injection and the spin Hall effect, while retaining long-distance spin transport. The simultaneous presence of spin-orbit coupling and magnetic exchange coupling also leads to a sizeable anomalous Hall effect.

Mesoscale and Nanoscale Physics
Spin inversion in graphene spin valves by gate-tunable magnetic proximity effect at one-dimensional contacts

Jinsong Xu,Simranjeet Singh,Jyoti Katoch,Guanzhong Wu,Tiancong Zhu,Igor Žutić,Roland K. Kawakami

DOI: https://doi.org/10.1038/s41467-018-05358-3

IF: 16.6

2018-07-20

Nature Communications

Abstract:Graphene has remarkable opportunities for spintronics due to its high mobility and long spin diffusion length, especially when encapsulated in hexagonal boron nitride (h-BN). Here, we demonstrate gate-tunable spin transport in such encapsulated graphene-based spin valves with one-dimensional (1D) ferromagnetic edge contacts. An electrostatic backgate tunes the Fermi level of graphene to probe different energy levels of the spin-polarized density of states (DOS) of the 1D ferromagnetic contact, which interact through a magnetic proximity effect (MPE) that induces ferromagnetism in graphene. In contrast to conventional spin valves, where switching between high- and low-resistance configuration requires magnetization reversal by an applied magnetic field or a high-density spin-polarized current, we provide an alternative path with the gate-controlled spin inversion in graphene.

multidisciplinary sciences
Spin-Tunneling Magnetoresistive Effects in Bottom-Up-Grown Ni/Graphene/Ni Nanojunctions

Weicheng Qiu,Fuze Jiang,Junping Peng,Mengchun Pan,Peisen Li,Jiafei Hu,Yueguo Hu

DOI: https://doi.org/10.1021/acsami.4c11199

IF: 9.5

2024-11-01

ACS Applied Materials & Interfaces

Abstract:Two-dimensional (2D) materials embedded in magnetic tunnel junctions (MTJs) provide a platform to increase the control over spin transport properties by the proximity spin-filtering effect. This could be harnessed to craft spintronic devices with low power consumption and high performance. We explore the spin transport in the 2D MTJs based on graphene, which is uniformly grown on Ni(111) substrates using the chemical vapor deposition technique. After the Ni thin film is deposited bottom-up on...

materials science, multidisciplinary,nanoscience & nanotechnology
Opto-Valleytronic Spin Injection in Monolayer MoS2/Few-Layer Graphene Hybrid Spin Valves

Yunqiu,Luo,Jinsong Xu,Tiancong Zhu,Guanzhong Wu,Elizabeth J. McCormick,Wenbo Zhan,Mahesh R. Neupane,Roland K. Kawakami

DOI: https://doi.org/10.48550/arXiv.1705.09371

2017-05-25

Mesoscale and Nanoscale Physics

Abstract:Two dimensional (2D) materials provide a unique platform for spintronics and valleytronics due to the ability to combine vastly different functionalities into one vertically-stacked heterostructure, where the strengths of each of the constituent materials can compensate for the weaknesses of the others. Graphene has been demonstrated to be an exceptional material for spin transport at room temperature, however it lacks a coupling of the spin and optical degrees of freedom. In contrast, spin/valley polarization can be efficiently generated in monolayer transition metal dichalcogenides (TMD) such as MoS2 via absorption of circularly-polarized photons, but lateral spin or valley transport has not been realized at room temperature. In this letter, we fabricate monolayer MoS2/few-layer graphene hybrid spin valves and demonstrate, for the first time, the opto-valleytronic spin injection across a TMD/graphene interface. We observe that the magnitude and direction of spin polarization is controlled by both helicity and photon energy. In addition, Hanle spin precession measurements confirm optical spin injection, spin transport, and electrical detection up to room temperature. Finally, analysis by a one-dimensional drift-diffusion model quantifies the optically injected spin current and the spin transport parameters. Our results demonstrate a 2D spintronic/valleytronic system that achieves optical spin injection and lateral spin transport at room temperature in a single device, which paves the way for multifunctional 2D spintronic devices for memory and logic applications.
Thermoelectric spin voltage in graphene

Juan F. Sierra,Ingmar Neumann,Jo Cuppens,Bart Raes,Marius V. Costache,Sergio O. Valenzuela

DOI: https://doi.org/10.1038/s41565-017-0015-9

2018-04-25

Abstract:In recent years, new spin-dependent thermal effects have been discovered in ferromagnets, stimulating a growing interest in spin caloritronics, a field that exploits the interaction between spin and heat currents. Amongst the most intriguing phenomena is the spin Seebeck effect, in which a thermal gradient gives rise to spin currents that are detected through the inverse spin Hall effect. Non-magnetic materials such as graphene are also relevant for spin caloritronics, thanks to efficient spin transport, energy-dependent carrier mobility and unique density of states. Here, we propose and demonstrate that a carrier thermal gradient in a graphene lateral spin valve can lead to a large increase of the spin voltage near to the graphene charge neutrality point. Such an increase results from a thermoelectric spin voltage, which is analogous to the voltage in a thermocouple and that can be enhanced by the presence of hot carriers generated by an applied current. These results could prove crucial to drive graphene spintronic devices and, in particular, to sustain pure spin signals with thermal gradients and to tune the remote spin accumulation by varying the spin-injection bias.

Mesoscale and Nanoscale Physics
Spintronics with graphene

Pierre Seneor,Bruno Dlubak,Marie-Blandine Martin,Abdelmadjid Anane,Henri Jaffres,Albert Fert

DOI: https://doi.org/10.1557/mrs.2012.277

2014-11-13

Abstract:Because of its fascinating electronic properties, graphene is expected to produce breakthroughs in many areas of nanoelectronics. For spintronics, its key advantage is the expected long spin lifetime, combined with its large electron velocity. In this article, we review recent theoretical and experimental results showing that graphene could be the long-awaited platform for spintronics. A critical parameter for both characterization and devices is the resistance of the contact between the electrodes and the graphene, which must be large enough to prevent quenching of the induced spin polarization but small enough to allow for the detection of this polarization. Spin diffusion lengths in the 100-{\mu}m range, much longer than those in conventional metals and semiconductors, have been observed. This could be a unique advantage for several concepts of spintronic devices, particularly for the implementation of complex architectures or logic circuits in which information is coded by pure spin currents.

Materials Science,Mesoscale and Nanoscale Physics
Profile and competences for the European dentist.

Alphons J. M. Plasschaert,W. P. Holbrook,E. Delap,C. Martínez,A. Walmsley

DOI: https://doi.org/10.1111/J.1600-0579.2005.00369.X

2005-08-01

European Journal Of Dental Education

Abstract:This paper presents the profile and competences for the European Dentist as approved by the General Assembly of the Association for Dental Education in Europe at its annual meeting held in Cardiff in September 2004. A task-force drafted the document, which was then sent to all European Dental Schools. Reactions received were used to amend the document. European dental schools are expected to adhere to the profile and the 17 major competences but the supporting competences may vary in detail between schools. The document will be reviewed in 5 years time. This paper will be disseminated to ministries of health, national dental associations and dental specialty associations or societies in Europe and these organisations will be asked to offer their comments. This information will be used in the reviewing process to be started in 2007. It is hoped that the availability of this document will assist dental schools in Europe to further harmonize and improve the quality of their curricula.
Gate Voltage Induced Spin-Filtering Effect in A Junction Based on Zigzag Graphene Nanoribbons

Fei Liu,Yunlu Li,Xiaoyan Liu,Jinfeng Kang

DOI: https://doi.org/10.1063/1.3664130

IF: 4

2011-01-01

Applied Physics Letters

Abstract:The spin polarized electronic transport in a junction based on ferromagnetic (FM) zigzag graphene nanoribbons (ZGNRs) is investigated by means of the non-equilibrium Green function technique within the mean field Hubbard model. By applying a step-like potential, the spin polarized current can be got, since the band structures of two spin states in FM ZGNRs are non-degenerate and the coherent electron transport obeys the band selective rule. The junction works as a spin-filter and the spin-filtering efficiency can reach the value 100%.
Spin Transport in Graphite and Graphene Spin Valves

Wei Han,K. Pi,W. H. Wang,K. M. McCreary,Yan Li,W. Bao,P. Wei,J. Shi,C. N. Lau,R. K. Kawakami

DOI: https://doi.org/10.1117/12.826705

2009-01-01

Abstract:Spin transport in graphene devices has been investigated in both local and non-local spin valve geometries. In the nonlocal measurement, spin transport and spin precession in single layer and bilayer graphene have both been achieved with transparent Co contacts. Gate controllable non-local spin signal was also demonstrated in this system. For the local graphite spin valve device, we report MR up to 12% for devices with tunneling contacts. We observe a correlation between the nonlinearity of the I-V curve and the presence of local MR and conclude that tunnel barriers can be employed to surmount the conductance mismatch problem in this system. These studies indicate that the improvement of tunnel barriers on graphene, especially to inhibit the formation of pinholes, is an important step to achieve more efficient
Spin and charge transport in graphene-based spin transport devices with Co/MgO spin injection and spin detection electrodes

F. Volmer,M. Drögeler,G. Güntherodt,C. Stampfer,B. Beschoten

DOI: https://doi.org/10.1016/j.synthmet.2015.07.007

2015-06-25

Abstract:In this review we discuss spin and charge transport properties in graphene-based single-layer and few-layer spin-valve devices. We give an overview of challenges and recent advances in the field of device fabrication and discuss two of our fabrication methods in more detail which result in distinctly different device performances. In the first class of devices, Co/MgO electrodes are directly deposited onto graphene which results in rough MgO-to-Co interfaces and favor the formation of conducting pinholes throughout the MgO layer. We show that the contact resistance area product (R$_c$A) is a benchmark for spin transport properties as it scales with the measured spin lifetime in these devices indicating that contact-induced spin dephasing is the bottleneck for spin transport even in devices with large R$_c$A values. In a second class of devices, Co/MgO electrodes are first patterned onto a silicon substrate. Subsequently, a graphene-hBN heterostructure is directly transferred onto these prepatterned electrodes which provides improved interface properties. This is seen by a strong enhancement of both charge and spin transport properties yielding charge carrier mobilities exceeding 20000 cm$^2$/(Vs) and spin lifetimes up to 3.7 ns at room temperature. We discuss several shortcomings in the determination of both quantities which complicates the analysis of both extrinsic and intrinsic spin scattering mechanisms. Furthermore, we show that contacts can be the origin of a second charge neutrality point in gate dependent resistance measurements which is influenced by the quantum capacitance of the underlying graphene layer.

Mesoscale and Nanoscale Physics
Controlled Epitaxial Growth and Atomically Sharp Interface of Graphene/Ferromagnetic Heterostructure via Ambient Pressure Chemical Vapor Deposition

Ruinan Wu,Yueguo Hu,Peisen Li,Junping Peng,Jiafei Hu,Ming Yang,Dixiang Chen,Yanrui Guo,Qi Zhang,Xiangnan Xie,Jiayu Dai,Weicheng Qiu,Guang Wang,Mengchun Pan

DOI: https://doi.org/10.3390/nano11113112

2021-11-18

Abstract:The strong spin filtering effect can be produced by C-Ni atomic orbital hybridization in lattice-matched graphene/Ni (111) heterostructures, which provides an ideal platform to improve the tunnel magnetoresistance (TMR) of magnetic tunnel junctions (MTJs). However, large-area, high-quality graphene/ferromagnetic epitaxial interfaces are mainly limited by the single-crystal size of the Ni (111) substrate and well-oriented graphene domains. In this work, based on the preparation of a 2-inch single-crystal Ni (111) film on an Al2O3 (0001) wafer, we successfully achieve the production of a full-coverage, high-quality graphene monolayer on a Ni (111) substrate with an atomically sharp interface via ambient pressure chemical vapor deposition (APCVD). The high crystallinity and strong coupling of the well-oriented epitaxial graphene/Ni (111) interface are systematically investigated and carefully demonstrated. Through the analysis of the growth model, it is shown that the oriented growth induced by the Ni (111) crystal, the optimized graphene nucleation and the subsurface carbon density jointly contribute to the resulting high-quality graphene/Ni (111) heterostructure. Our work provides a convenient approach for the controllable fabrication of a large-area homogeneous graphene/ferromagnetic interface, which would benefit interface engineering of graphene-based MTJs and future chip-level 2D spintronic applications.
Spin transport in magnetic graphene superlattices

Z. P. Niu,F. X. Li,B. G. Wang,L. Sheng,D. Y. Xing

DOI: https://doi.org/10.1140/epjb/e2008-00413-5

2008-01-01

The European Physical Journal B

Abstract:We study spin transport in normal/ferromagnetic/normal/ferromagnetic.../normal graphene superlattices, which can be realized by putting a series of magnetic insulator bars on top of a graphene sheet. Owing to magnetic proximity effect, local exchange splittings will be induced in the graphene sheet, effectively forming a magnetic graphene superlattice. The spin polarization of tunneling conductance and the magneto resistance (MR) exhibit oscillatory behavior with the gate voltage. The superlattice structure leads to an enhanced spin polarization and MR ratio, making the magnetic graphene superlattice become very promising in spintronics applications.
Towards fully two-dimensional spintronic devices

Alexey A. Kaverzin,Talieh S. Ghiasi,Avalon H. Dismukes,Xavier Roy,Bart J. van Wees

DOI: https://doi.org/10.1088/2053-1583/ac7881

2022-02-21

Abstract:Within the field of spintronics major efforts are directed towards developing applications for spin-based transport devices made fully out of two-dimensional (2D) materials. In this work we present an experimental realization of a spin-valve device where the generation of the spin signal is exclusively attributed to the spin-dependent conductivity of the magnetic graphene resulting from the proximity of an interlayer antiferromagnet, CrSBr. We clearly demonstrate that the usage of the conventional 3D magnetic contacts, that are commonly air-sensitive and incompatible with practical technologies, can be fully avoided when graphene/CrSBr heterostructures are employed. Moreover, apart from providing exceptionally long spin relaxation length, the usage of graphene for both generation and transport of the spin allows to automatically avoid the conductivity mismatch between the source and the channel circuits that has to be considered when using conventional low-resistive contacts. Our results address a necessary step in the engineering of spintronic circuitry out of layered materials and precede further developments in the area of complex spin-logic devices. Moreover, we introduce a fabrication procedure where we designed and implemented a recipe for the preparation of electrodes via a damage-free technique that offers an immediate advantage in the fields of air-sensitive and delicate organic materials.

Mesoscale and Nanoscale Physics
Magnetism and Perfect Spin Filtering Effect in Graphene Nanoflakes.

W. Sheng,Z. Y. Ning,Z. Q. Yang,H. Guo

DOI: https://doi.org/10.1088/0957-4484/21/38/385201

IF: 3.5

2010-01-01

Nanotechnology

Abstract:Magnetic and spin-polarized transport properties in zigzag-edged graphene nanoflakes were investigated from first-principles calculations. Ferrimagnetic structure was found to be the ground state for triangular shaped graphene flakes. Magnetism is weakened by doping B or N atoms into the flakes, and it is enhanced if F atoms are doped in certain sublattices of the flakes. The magnetic properties can be rationalized by the behaviors of dopants as well as interactions between dopants and the host atoms. A perfect (100%) spin filtering effect was achieved for the pure or B doped graphene flake sandwiched between two gold electrodes. The orientation of the spin current is found to be flipped if the flake is doped with N, O, or F atoms. The orientation-tunable spin filtering effect is potentially useful in practical applications.
Electrical spin injection, transport, and detection in graphene-hexagonal boron nitride van der Waals heterostructures: progress and perspectives

Mallikarjuna Gurram,Siddhartha Omar,Bart J. van Wees

DOI: https://doi.org/10.1088/2053-1583/aac34d

2017-12-21

Abstract:The current research in graphene spintronics strives for achieving a long spin lifetime, and efficient spin injection and detection in graphene. In this article, we review how hexagonal boron nitride (hBN) has evolved as a crucial substrate, as an encapsulation layer, and as a tunnel barrier for manipulation and control of spin lifetimes and spin injection/detection polarizations in graphene spin valve devices. First, we give an overview of the challenges due to conventional SiO$_2$ substrate for spin transport in graphene followed by the progress made in hBN based graphene heterostructures. Then we discuss in detail the shortcomings and developments in using conventional oxide tunnel barriers for spin injection into graphene followed by introducing the recent advancements in using the crystalline single/bi/tri-layer hBN tunnel barriers for an improved spin injection and detection which also can facilitate two-terminal spin valve and Hanle measurements, at room temperature, and are of technological importance. A special case of bias induced spin polarization of contacts with exfoliated and chemical vapour deposition (CVD) grown hBN tunnel barriers is also discussed. Further, we give our perspectives on utilizing graphene-hBN heterostructures for future developments in graphene spintronics.

Mesoscale and Nanoscale Physics,Materials Science
Spin filter effect and large magnetoresistance in the zigzag graphene nanoribbons

Z. P. Niu,D. Y. Xing

DOI: https://doi.org/10.1140/epjb/e2009-00401-3

2009-01-01

The European Physical Journal B

Abstract:The spin filter effect and magnetoresistance (MR) in the graphene nanoribbons with zigzag edges have been investigated by the non-equilibrium Green’s function method. Due to the spin-dependent current blocking effect, the ferromagnetic graphene/normal graphene junction can filter the spin in one direction, so a fully spin-polarized current is found. As the on-site energy μ R in the right lead goes from negative to positive, the spin-down transmission would suddenly transforms from an `ON’ state to an `OFF’ state, however the spin-up transmission transforms from an `OFF’ state to an `ON’ state, so we can choose the current’s spin polarized direction by tuning μ R . For the ferromagnetic graphene/ferromagnetic graphene junction the current for the antiparallel magnetization configuration is blocked, a very large MR is obtained. It is expected that these features may serve as a type of useful spintronic devices in future.
Tunable induced magnetic moment and in-plane conductance of graphene in Ni/graphene/Ni nano-spin-valve-like structure: A first principles study

Yusuf Wicaksono,Shingo Teranishi,Kazutaka Nishiguchi,Koichi Kusakabe

DOI: https://doi.org/10.1016/j.carbon.2018.11.075

IF: 10.9

2019-03-01

Carbon

Abstract:This study theoretically investigated the magnetic properties and electronic structure of a graphene-based nano-spin-valve-like structure. Magnetic nickel layers on both sides of the graphene were considered. A spin-polarized generalized-gradient approximation determined the electronic states. In an energetically stable stacking arrangement of graphene and two nickel layers, the anti-parallel spin configuration of the underlayer and overlayer magnetic moments had the lowest energy, which is in agreement with previous experimental studies. The spin density mapping and obtained band-structure results show that when the upper and lower Ni(111) slabs have an anti-parallel (parallel) magnetic-moment configuration, the carbon atoms of sublattices A and B will have an antiferromagnetic (ferromagnetic) spin configuration. A band gap at the Dirac cone was open when the alignment had an anti-parallel configuration and closed when the alignment had a parallel configuration. Therefore, the in-plane conductance of the graphene layer depends on the magnetic alignment of the two nickel slabs when the Fermi level is adjusted at the Dirac point. Both the magnetic properties and electronic structures of the Ni/graphene/Ni nanostructure cause the system to be a new prospective spintronic device showing controllable in-plane magnetoresistance.

materials science, multidisciplinary,chemistry, physical
Spin-Dependent Bandgap Structures and Spin Filtering in Graphene with Multiple Ferromagnetic Barriers

R. L. Zhang,J. J. Li,R. R. Sun,R. W. Peng,R. S. Huang,Mu Wang

DOI: https://doi.org/10.1109/tmag.2015.2439263

IF: 1.848

2015-01-01

IEEE Transactions on Magnetics

Abstract:We investigate spin-dependent bandgap structures and spin filtering in graphene with multiple ferromagnetic barriers. Using the transfer matrix method, we have calculated the spin-dependent transmission coefficients, the spin polarization, the conductance, and the electronic energy spectra of the systems. It is shown that the spinup and spindown electrons possess different bandgap structures. As a result, full spin polarization can be achieved within several separated energy zones. The width of the energy zone with full spin polarization can be effectively manipulated by adjusting the exchange field. Correspondingly, conductance steps with full spin polarization are observed in the systems. Our investigations may have potential applications in the design of carbon-based spin filters.

Disease burden in four populations of dog and cat breeds compared to mixed-breed dogs and European shorthair cats.

Spin Filter and Spin Valve in Ferromagnetic Graphene

Theoretical prediction of perfect spin filtering at interfaces between close-packed surfaces of Ni or Co and graphite or graphene

A seamless graphene spin valve based on proximity to van der Waals magnet Cr$_2$Ge$_2$Te$_6$

Spin inversion in graphene spin valves by gate-tunable magnetic proximity effect at one-dimensional contacts

Spin-Tunneling Magnetoresistive Effects in Bottom-Up-Grown Ni/Graphene/Ni Nanojunctions

Opto-Valleytronic Spin Injection in Monolayer MoS2/Few-Layer Graphene Hybrid Spin Valves

Thermoelectric spin voltage in graphene

Spintronics with graphene

Profile and competences for the European dentist.

Gate Voltage Induced Spin-Filtering Effect in A Junction Based on Zigzag Graphene Nanoribbons

Spin Transport in Graphite and Graphene Spin Valves

Spin and charge transport in graphene-based spin transport devices with Co/MgO spin injection and spin detection electrodes

Controlled Epitaxial Growth and Atomically Sharp Interface of Graphene/Ferromagnetic Heterostructure via Ambient Pressure Chemical Vapor Deposition

Spin transport in magnetic graphene superlattices

Towards fully two-dimensional spintronic devices

Magnetism and Perfect Spin Filtering Effect in Graphene Nanoflakes.

Electrical spin injection, transport, and detection in graphene-hexagonal boron nitride van der Waals heterostructures: progress and perspectives

Spin filter effect and large magnetoresistance in the zigzag graphene nanoribbons

Tunable induced magnetic moment and in-plane conductance of graphene in Ni/graphene/Ni nano-spin-valve-like structure: A first principles study

Spin-Dependent Bandgap Structures and Spin Filtering in Graphene with Multiple Ferromagnetic Barriers