III-V Nanowires for Optoelectronic Applications

H. H. Tan,N. Jiang,Y. H. Lee,D. Saxena,P. Parkinson,Q. Gao,L. Fu,C. Jagadish

DOI: https://doi.org/10.1117/12.692715

2013-01-01

Abstract:The growth of III-V semiconductor core-shell nanowires by Au-catalyzed metal organic chemical vapor deposition is described. The effect of growth conditions on the properties of the nanowires is discussed. Results nanowire solar cells and lasers are also presented.

What problem does this paper attempt to address?

III–V nanowires and nanowire optoelectronic devices

yunyan zhang,jiang wu,martin aagesen,huiyun liu

DOI: https://doi.org/10.1088/0022-3727/48/46/463001

2015-01-01

Abstract:III-V nanowires (NWs) have been envisioned as nanoscale materials for next-generation technology with good functionality, superior performance, high integration ability and low cost, because of their special growth modes and unique 1D structure. In this review, we summarize the main challenges and important progress of the fabrication and applications of III-V NWs. We start with the III-V NW growth, that significantly influences the NW morphology and crystal quality. Attention is then given to the fabrication of some advanced III-V structures composed of axial and radial junctions. After that, we review the advantages, challenges, and major breakthroughs of using III-V NWs as solar energy harvesters and light emitters. Finally, we attempt to give a perspective look on the future development trends and the remaining challenges in the research field of III-V NWs.
Growth and characterization of III–V compound semiconductor nanowires

qiang gao,h h tan,howard e jackson,l m smith,jan m yarrisonrice,jin zou,michael b johnston,c jagadish

2011-01-01

Abstract:We review various III-V compound semiconductor nanowires grown by metalorganic chemical vapor deposition. Transmission and scanning electron microscopy, micro-photolumine-scence and micro-Raman spectroscopy have been used to understand the crystal structure, light emission and band structure.
Growth of III-V Nanowires and Nanowire Heterostructures by Metalorganic Chemical Vapor Deposition

Hannah J. Joyce,Yong Kim,Qiang Gao,Hark Hoe Tan,Chennupati Jagadish

DOI: https://doi.org/10.1109/nems.2007.352082

2007-01-01

Abstract:We have investigated the structural and optical properties of III-V nanowires, and axial and radial nanowire heterostructures, fabricated by metalorganic chemical vapor deposition. In addition to binary nanowires, such as GaAs, InAs, and InP, we have demonstrated ternary InGaAs and AlGaAs nanowires. Core-shell nanowires consisting of GaAs cores with AlGaAs shells, and core-multishell nanowires with alternating shells of AlGaAs and GaAs, exhibit strong photoluminescence. Axial segments of InGaAs have been incorporated within GaAs nanowires to form GaAs/InGaAs nanowire superlattices. We have developed a two-temperature growth procedure to optimize nanowire morphology. An initial high temperature step promotes nucleation and epitaxial growth of straight (111)B-oriented nanowires. Lower temperatures are employed subsequently, to minimise radial growth.
III-V Compound Semiconductor Nanowires for Optoelectronic Applications

Hannah J. Joyce,Qiang Gao,H. Hoe Tan,C. Jagadish,Yong Kim,Jin Zou,Leigh M. Smith,Howard E. Jackson,Jan M. Yarrison-Rice,Patrick Parkinson,Michael B. Johnston

DOI: https://doi.org/10.1016/j.pquantelec.2011.03.002

2011-01-01

Abstract:Summary form only given. In the last few years, semiconductor nanowires (NWs) have attracted intensive attention due to both the intriguing fundamental properties and their potential applications in optoelectronic devices. GaAs NWs grown by metalorganic chemical vapor deposition (MOCVD) often exhibit tapered and kinked morphologies, depending on growth temperature. However, straight NWs of uniform diameter are preferred for device applications. We have developed a two-temperature growth procedure using MOCVD to simultaneously minimize adatom diffusion, tapering and kinking. GaAs NWs grown by this procedure have shown no planar defects and smooth sidewalls. This procedure should enable the development of ternary NWs with uniform composition and shape. Compared with a large amount of studies on GaAs, InP and GaN based III-V NWs, the antimonide III-V NWs have received little attention, despite their great potential for near- and mid-infrared device applications. Recently, GaSb subwavelength-wire lasers emitting near 1.55 mum have been demonstrated which opened the possibility to use NWs for telecommunications. In this talk, we report a successful growth of GaSb/GaAs heterostructure NWs on GaAs (111) B substrate by MOCVD. No misfit dislocations can be observed in the GaSb NW part from HRTEM, which suggests a complete strain relaxation of the GaSb NW on the GaAs NW.
Epitaxy of Iii-V Semiconductor Nanowires Towards Optoelectronic Devices

Q. Gao,H. J. Joyce,S. Paiman,H. H. Tan,Y. Kim,L. M. Smith,H. E. Jackson,J. M. Yarrison-Rice,X. Zhang,J. Zou,C. Jagadish

DOI: https://doi.org/10.1109/oecc.2009.5219756

2009-01-01

Abstract:GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by MOCVD via VLS mechanism. In this paper, I will give an overview of nanowire research activities in our group.
Engineering III–V Semiconductor Nanowires for Device Applications

Jennifer Wong‐Leung,Inseok Yang,Ziyuan Li,Siva Krishna Karuturi,Lan Fu,Hark Hoe Tan,Chennupati Jagadish

DOI: https://doi.org/10.1002/adma.201904359

IF: 29.4

2019-10-17

Advanced Materials

Abstract:<p>III–V semiconductor nanowires offer potential new device applications because of the unique properties associated with their 1D geometry and the ability to create quantum wells and other heterostructures with a radial and an axial geometry. Here, an overview of challenges in the bottom‐up approaches for nanowire synthesis using catalyst and catalyst‐free methods and the growth of axial and radial heterostructures is given. The work on nanowire devices such as lasers, light emitting nanowires, and solar cells and an overview of the top‐down approaches for water splitting technologies is reviewed. The authors conclude with an analysis of the research field and the future research directions.</p>

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
III–V Nanowires: Synthesis, Property Manipulations, and Device Applications

Ming Fang,Ning Han,Fengyun Wang,Zai-xing Yang,SenPo Yip,Guofa Dong,Jared J. Hou,Yulun Chueh,Johnny C. Ho

DOI: https://doi.org/10.1155/2014/702859

IF: 3.791

2014-01-01

Journal of Nanomaterials

Abstract:III–V semiconductor nanowire (NW) materials possess a combination of fascinating properties, including their tunable direct bandgap, high carrier mobility, excellent mechanical flexibility, and extraordinarily large surface-to-volume ratio, making them superior candidates for next generation electronics, photonics, and sensors, even possibly on flexible substrates. Understanding the synthesis, property manipulation, and device integration of these III–V NW materials is therefore crucial for their practical implementations. In this review, we present a comprehensive overview of the recent development in III–V NWs with the focus on their cost-effective synthesis, corresponding property control, and the relevant low-operating-power device applications. We will first introduce the synthesis methods and growth mechanisms of III–V NWs, emphasizing the low-cost solid-source chemical vapor deposition (SSCVD) technique, and then discuss the physical properties of III–V NWs with special attention on their dependences on several typical factors including the choice of catalysts, NW diameters, surface roughness, and surface decorations. After that, we present several different examples in the area of high-performance photovoltaics and low-power electronic circuit prototypes to further demonstrate the potential applications of these NW materials. Towards the end, we also make some remarks on the progress made and challenges remaining in the III–V NW research field.
Nanowires for Optoelectronic Device Applications

Q. Gao,H. J. Joyce,S. Paiman,J. H. Kang,H. H. Tan,Y. Kim,L. M. Smith,H. E. Jackson,J. M. Yarrison-Rice,X. Zhang,J. Zou,C. Jagadish

DOI: https://doi.org/10.1002/pssc.200982528

2009-01-01

Abstract:GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by metalorganic chemical vapor deposition using Au nanoparticles as catalyst. In this paper, we will give an overview of nanowire research activities in our group. In particular, the effects of growth parameters for GaAs and InP nanowires on the crystal quality were studied in detail. We demonstrated the ability to obtain defect-free GaAs nanowires via either two-temperature procedure, or by controlling V/III ratio or growth rate. The crystal structure of InP nanowires, ie, WZ or ZB, can also be engineered by just controlling the V/III ratio. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Growth and Properties of III–V Compound Semiconductor Heterostructure Nanowires

Q. Gao,H. H. Tan,H. E. Jackson,L. M. Smith,J. M. Yarrison-Rice,Jin Zou,C. Jagadish

DOI: https://doi.org/10.1088/0268-1242/26/1/014035

2012-01-01

ChemInform

Abstract:We review various GaAs-based axial and radial nanowire heterostructures grown on (1 1 1) B GaAs substrates by metal organic chemical vapor deposition via vapor-liquid-solid mechanism. Transmission electron microscopy, time-resolved photoluminescence and micro-Raman spectroscopy have been used to understand the crystal structure, non-radiative surface and bulk defects, carrier lifetime and strain effects on the bandgap energy.
3D Atomic-Scale Insights into Anisotropic Core-Shell-Structured InGaAs Nanowires Grown by Metal-Organic Chemical Vapor Deposition.

Jiangtao Qu,Sichao Du,Tim Burgess,Changhong Wang,Xiangyuan Cui,Qiang Gao,Weichao Wang,Hark Hoe Tan,Hui Liu,Chennupati Jagadish,Yingjie Zhang,Hansheng Chen,Mansoor Khan,Simon Ringer,Rongkun Zheng

DOI: https://doi.org/10.1002/adma.201701888

IF: 29.4

2017-01-01

Advanced Materials

Abstract:III-V ternary InGaAs nanowires have great potential for electronic and optoelectronic device applications; however, the 3D structure and chemistry at the atomic-scale inside the nanowires remain unclear, which hinders tailoring the nanowires for specific applications. Here, atom probe tomography is used in conjunction with a first-principles simulation to investigate the 3D structure and chemistry of InGaAs nanowires, and reveals i) the nanowires form a spontaneous core-shell structure with a Ga-enriched core and an In-enriched shell, due to different growth mechanisms in the axial and lateral directions; ii) the shape of the core evolves from hexagon into Reuleaux triangle and grows larger, which results from In outward and Ga inward interdiffusion occurring at the core-shell interface; and iii) the irregular hexagonal shell manifests an anisotropic growth rate on {112}A and {112}B facets. Accordingly, a model in terms of the core-shell shape and chemistry evolution is proposed, which provides fresh insights into the growth of these nanowires.
Growth of III-V Semiconductor Nanowires and Their Heterostructures

Ang Li,Jin Zou,Xiaodong Han

DOI: https://doi.org/10.1007/s40843-016-0119-9

2016-01-01

Science China Materials

Abstract:In this paper, we present a review about recent progress on the growth of III-V semiconductor homo- and heterostructured nanowires. We will first deliver a general discussion on the crystal structure and the conventional growth mechanism of one dimensional nanowires. Then we provide a review about most widely used growth techniques, sample preparation and the cutting edge characterization techniques including advanced electron microscopy, in situ electron diffraction, micro-Raman spectroscopy, and atom probe tomography. In the end, the growth of different heteostructured III-V semiconductor nanowires will be reviewed. We will focus on the morphology dependence, temperature influence, and III/V flux ratio dependent growth. The perspective and an outlook of this field is discussed in order to foresee the future of the fundamental research and application of these one dimensional nanostructures.
Self-Seeded MOCVD Growth and Dramatically Enhanced Photoluminescence of InGaAs/InP Core–Shell Nanowires

Xianghai Ji,Xiren Chen,Xiaoguang Yang,Xingwang Zhang,Jun Shao,Tao Yang

DOI: https://doi.org/10.1186/s11671-018-2690-3

2018-01-01

Nanoscale Research Letters

Abstract:We report on the growth and characterization of InGaAs/InP core–shell nanowires on Si–(111) substrates by metal-organic chemical vapor deposition (MOCVD). The strain at the core–shell interface induced by the large lattice mismatch between the InGaAs core and InP shell materials has strong influence on the growth behavior of the InP shell, leading to the asymmetric growth of InP shell around the InGaAs core and even to the bending of the nanowires. Transmission electron microscopy (TEM) measurements reveal that the InP shell is coherent with the InGaAs core without any misfit dislocations. Furthermore, photoluminescence (PL) measurements at 77 K show that the PL peak intensity from the InGaAs/InP core−shell nanowires displays a ∼ 100 times enhancement compared to the only InGaAs core sample without InP shell due to the passivation of surface states and effective carrier confinement resulting from InP shell layer. The results obtained here further our understanding of the growth behavior of strained core–shell heterostructure nanowires and may open new possibilities for applications in InGaAs/InP heterostructure nanowire-based optoelectronic devices on Si platform.
Structural and Optical Properties of Axial and Radial Heterostructure Ill-V Nanowires Grown by Metalorganic Chemical Vapour Deposition

H. J. Joyce,Q. Gao,Y. Kim,H. H. Tan,C. Jagadish

DOI: https://doi.org/10.1109/omems.2007.4373903

2006-01-01

Abstract:We have investigated the structural and optical properties of III-V nanowires grown by metalorganic chemical vapour deposition. Binary GaAs, InAs and InP nanowires, and ternary InGaAs and AlGaAs nanowires, have been fabricated and characterised. A variety of axial and radial heterostructures have also been fabricated, including GaAs/AlGaAs core-multishell and GaAs/InGaAs superlattice nanowires. GaAs/AlGaAs core-shell nanowires exhibit strong photoluminescence as the AlGaAs shell passivates the GaAs nanowire surface reducing the surface nonradiative recombination.
Growth and optical properties of axial hybrid III-V/Si nanowires

Moïra Hocevar,George Immink,Marcel Verheijen,Nika Akopian,Val Zwiller,Leo Kouwenhoven,Erik Bakkers

DOI: https://doi.org/10.1038/ncomms2277

2012-10-31

Abstract:Hybrid silicon nanowires with an integrated light-emitting segment can significantly advance nanoelectronics and nanophotonics. They would combine transport and optical characteristics in a nanoscale device, which can operate in the fundamental single-electron and single-photon regime. III-V materials, such as direct bandgap gallium-arsenide, are excellent candidates for such optical segments. However, interfacing them with silicon during crystal growth is a major challenge, because of the lattice mismatch, different expansion coefficients and the formation of anti-phase boundaries. Here, we demonstrate a silicon nanowire with an integrated gallium-arsenide segment. We precisely control the catalyst composition and surface chemistry to obtain dislocation-free interfaces. The integration of gallium-arsenide of high optical quality with silicon is enabled by short gallium phosphide buffers. We anticipate that such hybrid silicon/III-V nanowires open practical routes for quantum information devices, where for instance electronic and photonic quantum bits are manipulated in a III-V segment and stored in a silicon section.

Materials Science,Optics
General Synthetic Strategies For Iii-V Nanowires

Jianye Li,Hongmin Zhu

DOI: https://doi.org/10.2174/978160805052910003

2011-01-01

Abstract:III-V semiconductor nanowires are expected to play a significant role in future nanoscale electronic and optoelectronic devices. In this chapter, we attempt to review the general synthetic strategies for III-V compound nanowires. We first summarize various III-V nanowire growth techniques such as chemical vapor deposition, laser ablation, metal-organic chemical vapor deposition, molecular beam epitaxy, chemical beam epitaxy, hydride vapour phase epitaxy, wafer annealing, and low-temperature solution methods. Subsequently, we discuss mechanisms involved to generate III-V nanowires from different synthetic schemes and conditions, including vapor-liquid-solid, vapor-solid-solid, solution-liquid-solid, vapor-solid (self-catalytic, oxide-assisted, and axial screw dislocation), ligand-aided solution-solid, and reactive Si-assisted growth.
Design and Growth of III–V Nanowire Solar Cell Arrays on Low Cost Substrates

Anjia Gu,Yijie Huo,Shu Hu,Tomas Sarmiento,Evan Pickett,Dong Liang,Shuang Li,Angie Lin,Shruti Thombare,Zongfu Yu,Shanhui Fan,Paul McIntyre,Yi Cui,James Harris

DOI: https://doi.org/10.1109/pvsc.2010.5614801

2010-01-01

Abstract:State-of-the-art III-V multijunction cells have achieved a record efficiency of 42.8%, which has fueled great interest in the utility sector for large-scale deployment. However, III-V solar cells have thus far proven too expensive for widespread terrestrial applications due to the combined cost of substrates, growth processes, and materials. Here, we propose a novel III-V solar cell based on the epitaxial growth of AlGaAs/GaAs on Ge nanowires, pre-patterned on low cost substrates to achieve cost-effective, large-scale deployment. This approach is based on our recent discovery that the surface kinetics and epitaxial growth by MBE and MOCVD are dramatically altered when growing on nanostructures instead of planar surfaces. These growth kinetics enable uniform, single crystal growth of low-defect, lattice mismatched materials on nanostructures with high aspect ratios. We present the device design, TCAD simulation results, and experimental growth results for GaAs/Ge core-shell nanowires on silicon substrates. Finite-difference time-domain (FDTD) simulation results show that this GaAs/Ge nanowire array has reduced reflection and wider incident angle acceptance than its planar counterpart, and outperforms planar anti-reflective coatings under some conditions. GaAs is epitaxially grown on Ge nanowires via MBE and MOCVD. TEM measurements on the wires confirm that the GaAs/Ge core-shell structure is single crystal. Based on these results, we are in the process of fabricating GaAs/Ge nanowire solar cell arrays. We will present further characterization of these core-shell arrays as well as electrical measurements of solar cell devices.
Iii-Nitride Nanowires Research

Ho-Young Cha,Huaqiang Wu

2009-01-01

Abstract:Semiconductor nanowires have great potential for highly integrated nanoscale systems, high efficiency sensors, and advanced optical and electronic applications due to their reduced dimensionality incorporated with inherent doping capability and defect free material quality. Due to their unique properties, intensive research efforts have been made on III-nitride nanowires. Research progress has been impressive, both n-type and p-type doped III-nitride nanowires have been fabricated, and heterostructure nanowires have also been successfully synthesized. This chapter reviews various methods of III-nitride nanowire synthesis, and outstanding research on optical and electronic device demonstration.
Ternary Self-Catalyzed GaAsP Nanowire Grown by Molecular Beam Epitaxy

Peng Yu,Jiang Wu,Zhiming Wang

DOI: https://doi.org/10.1088/1755-1315/170/4/042049

2018-01-01

IOP Conference Series Earth and Environmental Science

Abstract:III-V nanowires demonstrate controlled dimensions, high aspect ratio, high carrier mobility and light trapping ability, making them promising blocks for next generation electronic and photonic devices. GaAsP nanowire has been widely investigated for light-emitting diodes, solar cells due to its tunable bandgap. However, it is a very immature field and significant growth development need to be made for optimising their properties and further for a range of applications. In this paper, self-catalyzed GaAsP nanowires were grown on Si substrate without introducing contamination from metallic nanoparticles. Surface passivation technology was applied on nanowires to boosts their optical performance.
Growth of High-Quality Self-Catalyzed Core-Shell Gaasp Nanowires on Si Substrates

Yunyan Zhang,Martin Aagesen,Ana M. Sanchez,Jiang Wu,Richard Beanland,Thomas Ward,Dongyoung Kim,Pamela Jurczak,Suguo Huo,Huiyun Liu

DOI: https://doi.org/10.1117/12.2210983

2016-01-01

Abstract:Self-catalyzed GaAsP nanowires (NWs) have a band gap that is capable of covering the working wavelengths from green to infrared. However, the difficulties in controlling P and the complexities of the growth of ternary NWs make it challenging to fabricate them. In this work, self-catalyzed GaAsP NWs were successfully grown on Si substrates by solid-source molecular beam epitaxy and demonstrated almost stacking fault free zinc blend crystal structure, Growth of high-quality shell has been realized on the core NWs. In the shell, a quasi-3-fold composition symmetry has been observed for the first time. Moreover, these growth techniques have been successfully applied for growth on patterned Si substrates after some creative modifications such as high-temperature substrate cleaning and Ga pre-deposition. These results open up new perspectives for integrating III−V nanowire photovoltaics and visible light emitters on the silicon platform using self-catalyzed GaAsP core−shell nanowires.
The effect of V/III ratio and catalyst particle size on the crystal structure and optical properties of InP nanowires

S Paiman,Q Gao,H H Tan,C Jagadish,K Pemasiri,M Montazeri,H E Jackson,L M Smith,J M Yarrison-Rice,X Zhang,J Zou

DOI: https://doi.org/10.1088/0957-4484/20/22/225606

IF: 3.5

2009-05-13

Nanotechnology

Abstract:InP nanowires were grown on 111B InP substrates by metal-organic chemical vapour deposition in the presence of colloidal gold particles as catalysts. Transmission electron microscopy and photoluminescence measurements were carried out to investigate the effects of V/III ratio and nanowire diameter on structural and optical properties. Results show that InP nanowires grow preferably in the wurtzite crystal structure than the zinc blende crystal structure with increasing V/III ratio or decreasing diameter. Additionally, time-resolved photoluminescence (TRPL) studies have revealed that wurtzite nanowires show longer recombination lifetimes of approximately 2500 ps with notably higher quantum efficiencies.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology

III-V Nanowires for Optoelectronic Applications

III–V nanowires and nanowire optoelectronic devices

Growth and characterization of III–V compound semiconductor nanowires

Growth of III-V Nanowires and Nanowire Heterostructures by Metalorganic Chemical Vapor Deposition

III-V Compound Semiconductor Nanowires for Optoelectronic Applications

Epitaxy of Iii-V Semiconductor Nanowires Towards Optoelectronic Devices

Engineering III–V Semiconductor Nanowires for Device Applications

III–V Nanowires: Synthesis, Property Manipulations, and Device Applications

Nanowires for Optoelectronic Device Applications

Growth and Properties of III–V Compound Semiconductor Heterostructure Nanowires

3D Atomic-Scale Insights into Anisotropic Core-Shell-Structured InGaAs Nanowires Grown by Metal-Organic Chemical Vapor Deposition.

Growth of III-V Semiconductor Nanowires and Their Heterostructures

Self-Seeded MOCVD Growth and Dramatically Enhanced Photoluminescence of InGaAs/InP Core–Shell Nanowires

Structural and Optical Properties of Axial and Radial Heterostructure Ill-V Nanowires Grown by Metalorganic Chemical Vapour Deposition

Growth and optical properties of axial hybrid III-V/Si nanowires

General Synthetic Strategies For Iii-V Nanowires

Design and Growth of III–V Nanowire Solar Cell Arrays on Low Cost Substrates

Iii-Nitride Nanowires Research

Ternary Self-Catalyzed GaAsP Nanowire Grown by Molecular Beam Epitaxy

Growth of High-Quality Self-Catalyzed Core-Shell Gaasp Nanowires on Si Substrates

The effect of V/III ratio and catalyst particle size on the crystal structure and optical properties of InP nanowires