Abstract:The direct observation of the Ni‐assisted GaP nanowire growth process via transmission electron microscopy reveals two different growth mechanisms by Trimethylgallium (TMGa) precursor supply variations. The decrease of TMGa flow results in the formation of Ni2P phase as growth promoters with cation exchange reaction in addition to interface diffusion as the mass transport pathway, leading to a much higher growth rate. Vapor–solid–solid (VSS) growth of III‐V semiconductor nanowires (NWs) has long been considered an alternative for the vapor–liquid–solid (VLS) growth mode, with the potential to avoid the incorporation of deep‐level impurities into semiconductors and to form compositionally abrupt interfaces. Most research however indicates that VSS growth has a much lower growth rate than observed in the VLS growth regime, explained by the very slow mass transport at the solid seed particle‐NW interface. In this study, the direct observation of the VSS growth of GaP NWs under different mechanisms is reported, by using Ni as a seed material inside an environmental transmission electron microscope. These results reveal that when NWs are grown from seed particles exhibiting the NiGa and Ni2Ga3 phases, classic VSS growth occurs with slow NW growth and interface diffusion as the dominant mass transport pathway. In contrast, when NWs are grown by seed particles containing Ni2P phase, rapid NW growth is observed together with a continuous reshaping of the seed particle. A cation exchange reaction is proposed as the predominant growth mechanism. This research results demonstrate an entirely new variant of the VSS growth mode, opening up new degrees of freedom for tuning NW properties.

General Synthetic Strategies For Iii-V Nanowires

A General Synthetic Route to Iii-V Compound Semiconductor Nanowires

Generic Technique to Grow Iii-V Semiconductor Nanowires in A Closed Glass Vessel

Engineering III–V Semiconductor Nanowires for Device Applications

Silicon Nanowire Synthesis by Chemical Vapor Deposition

Iii-Nitride Nanowires Research

From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

Tiny silicon nano-wires synthesis on silicon wafers

Phase Selection Enabled Formation of Abrupt Axial Heterojunctions in Branched Oxide Nanowires.

The effect of V/III ratio on the morphology and structure of GaAs nanowires by MOCVD

III-NlTRIDE NANOWIRES RESEARCH

Facile Five-Step Heteroepitaxial Growth of GaAs Nanowires on Silicon Substrates and the Twin Formation Mechanism.

Vapor–liquid–solid growth of highly stoichiometric gallium phosphide nanowires on silicon: restoration of chemical balance, congruent sublimation and maximization of band-edge emission

Growth and optical properties of axial hybrid III-V/Si nanowires

General Synthetic Methods

Plausible Colloidal Methods to Synthesize Semiconductor Nanowires: Deep Study From ZnSe Nanorods

Synthesis and Phase Transformation of In2se3 and Cuinse2 Nanowires

In Situ Manipulation of Growth Mechanisms in the Vapor–Solid–Solid Growth of GaP Nanowires

ChemInform Abstract: A General Synthetic Route to III—V Compound Semiconductor Nanowires.

Silver-assisted growth of high-quality InAs 1- x Sb x nanowires by molecular-beam epitaxy

Influence of the group V element on the chemical potential and crystal structure of Au-catalyzed III-V nanowires