Abstract:Owing to the high mobility, narrow bandgap, strong spin-orbit coupling and large g-factor, Sb-based III-V nanowires (NWs) attracted significant interests in high speed electronics, long-wavelength photodetectors and quantum superconductivity in the past decade. In this review, we aim to give an integrated summarization about the recent advances in binary as well as ternary Sb-based III-V NWs, starting from the fundamental properties, NWs growth mechanism, typical synthetic methods to their applications in transistors, photodetectors, and Majorana fermions detection. Up to now, famous NWs growth techniques of solid-source chemical vapor deposition (CVD), molecular beam epitaxy, metal organic vapor phase epitaxy and metal organic CVD etc have been adopted and developed for the controllable growth of Sb-based III-V NWs. Several parameters including heating temperature, III/V ratio of source materials, growth temperature, catalyst size and kinds, and growth substrate play important roles on the morphology, position, diameter distribution, growth orientation and crystal phase of Sb-based III-V NWs. Furthermore, we discuss the photoelectrical applications of Sb-based III-V NWs such as field-effect-transistors, tunnel diode, low-power inverter, and infrared detectors etc. Importantly, due to the strongest spin-orbit interaction and giant g-factor among all III-V semiconductors, InSb with the geometry of one-dimension NW is considered as the most promising candidate for the detection of Majorana fermions. In the end, we also summarize the main challenges remaining in the field and put forward some suggestions for the future development of Sb-based III-V NWs.

Iii-Nitride Nanowires Research

III-NlTRIDE NANOWIRES RESEARCH

Bottom-Up Formation of III-Nitride Nanowires: Past, Present, and Future for Photonic Devices

Engineering III–V Semiconductor Nanowires for Device Applications

III–V Nanowires: Synthesis, Property Manipulations, and Device Applications

III–V nanowires and nanowire optoelectronic devices

Recent Progress in Synthesis, Growth Mechanisms, Properties, and Applications of Silicon Nitride Nanowires

Synthesis, Characterization and Device Applications of InGaAs Nanowires

Growth of III-V Semiconductor Nanowires and Their Heterostructures

Synthetic Strategies and Applications of GaN Nanowires

Recent Progress in III-nitride Nanosheets: Properties, Materials and Applications

Recent Progress in Group III-nitride Nanostructures: from Materials to Applications

General Synthetic Strategies For Iii-V Nanowires

Synthesis and characterizations of ternary InGaAs nanowires by a two-step growth method for high-performance electronic devices.

Recent Advances in Sb-based III–V Nanowires

III-V Nanowires for Optoelectronic Applications

Nanowires for Optoelectronic Device Applications

Compositional and Structural Engineering of Inorganic Nanowires Toward Advanced Properties and Applications

Nanowires

Nanofabrication of III-Nitride Emitters for Solid-State Lighting

Growth and characterization of III–V compound semiconductor nanowires