Abstract:As the semiconductor manufacturing design rules have been continually shrinking, the requirement in linewidth uniformity, linewidth roughness, line edge roughness, and overlay has been rising to stringent levels [1]. In a FinFET process, the fins are made with 193 nm immersion lithography together with the Self-Aligned Quadruple Patterning (SAQP) techniques. The linewidth uniformity, line edge roughness (LER) and linewidth roughness (LWR) are critical limiting factors in the process of SAQP as LER does not scale down with the dimensions of the devices. Three times the root mean square (3σ) is the most common LER characterization parameter. In this paper, we have conducted a SAQP process study on a typical film stack based on a 5 nm logic process flow. We will make the SAQP patterns with domestically made etching machine and Atomic Layer Deposition (ALD) tools and will characterize all etch steps within the mandrel 1 and spacer 1 of SAQP process in terms of variations. We will benchmark the measured data against required targets in linewidth uniformity and line edge/width roughness. Moreover, we will present and analyze the result of our study.

Impact of Line Edge Roughness and Linewidth Roughness on Critical Dimension Variation

Impacts of gate line edge roughness on sub 100nm MOSFETs

Investigations on Line-Edge Roughness (LER) and Line-Width Roughness (LWR) in Nanoscale CMOS Technology: Part II–Experimental Results and Impacts on Device Variability

Investigations on Line-Edge Roughness (LER) and Line-Width Roughness (LWR) in Nanoscale CMOS Technology: Part I–Modeling and Simulation Method

Full 3-D simulation of gate line edge roughness impact on sub-30nm FinFETs

A New Method to Fin-width Line Edge Roughness Effect of FinFET Performance

Simulation of Correlated Line-Edge Roughness in Multi-Gate Devices

Wafer Level Reliability Evaluation of Gate Oxide for Advanced CMOS Process

Effects of Gate Metal Work Function and Line Edge Roughness on the Variability of Junctionless Field-Effect Transistor

Analysis and Characterization of Line Edge Roughness of Nanostructures

A novel approach to simulate Fin-width Line Edge Roughness effect of FinFET performance

Analysis of Linewidth Uniformity and Line Edge/Width Roughness in a 5 Nm Logic SAQP Process

Impact of channel line-edge roughness on junctionless FinFET

Characterization of Line Edge Roughness and Line Width Roughness of Nano-Scale Typical Structures.

Variability Induced by Line Edge Roughness in Double-Gate Dopant-Segregated Schottky MOSFETs

Impact of Line Edge Roughness on Copper Interconnects

Simulation of line-edge roughness effects in silicon nanowire MOSFETs

Variability induced by Line edge roughness in silicon on thin box (SOTB) MOSFETs

Impact of Line-Edge Roughness on Double-Gate Schottky-Barrier Field-Effect Transistors

Line-Edge Roughness from Extreme Ultraviolet Lithography to Fin-Field-Effect-Transistor: Computational Study

Line-edge Roughness Induced Single Event Transient Variation in SOI FinFETs