Abstract:OBJECTIVE To explore the effect of prostaglandin E2 (PGE2) on the expression of high mobility group box-1 protein (HMGB1) in peritoneal macrophages of septic mice and its possible mechanisms.  Methods: The mouse peritoneal macrophages were isolated and cultured by conventional methods.The model of inflammation was established by using lipopolysaccharide (LPS) to incubate with mouse peritoneal macrophages. The PGE2, prostaglandin E receptor (EP) 4 agonist, EP4 RNAi, and DN.CREB inhibitory plasmid were used to interfere with the LPS-treated mouse peritoneal macrophage. The levels of HMGB1 was determined by Western blot.  Results: Compared with LPS alone treatment, the expression of HMGB1 in peritoneal macrophages was increased obviously after 24 h by treatment with PGE2 and LPS, and it was also increased after the combined treatment of EP4 receptor agonist with LPS for 24 h (both P<0.05); compared with the PGE2+LPS treatment, the level of HMGB1 was decreased after knockdown of EP4 receptor expression (P<0.05); compared with EP4 receptor agonist +LPS treatment, there was no difference in HMGB1 levels in mice after the treatment with DN.CREB plasmid to suppress CREB function (P>0.05); compared with LPS alone treatment, the combined treatment of EP4 receptor agonist with LPS for 24 h could up-regulate the phosphorylation of epidermal growth factor receptor (EGFR) and protein kinase B (Akt) thr308 (P<0.05), which were blocked by EGFR inhibitor. Once Akt specific inhibitor was used before EP4 and LPS treatment, the expression of HMGB1 was declined (P<0.05).  Conclusion: PGE2 can up-regulate the expression of HMGB1 in sepsis of peritoneal macrophages through EP4 receptor, which may be related to the activation of EGFR/PI3K/Akt signaling pathway.

Studies on nonvolatile resistance memory switching behaviors in InGaZnO thin films

Resistive switching in Nb-doped SrZrO3 memory films: An effective approach with a Cu modulation layer

Reversible Transition of Volatile to Non-Volatile Resistive Switching in Cu/SiNx/ZnO/Pt Memristor

Resistance switching study of stoichiometric ZrO2 films for non-volatile memory application

[Mechanisms for the regulatory effect of prostaglandin E2/prostaglandin E receptor 4 on high mobility group box-1 protein in lipopolysaccharide-induced sepsis in mouse peritoneal macrophage].

Bipolar Resistance Switching Characteristics in Tin/Zno:Mn/Pt Junctions Developed for Nonvolatile Resistive Memory Application

A flexible nonvolatile resistive switching memory device based on ZnO film fabricated on a foldable PET substrate

Bipolar Switching Behavior in TiN/ZnO/Pt Resistive Nonvolatile Memory with Fast Switching and Long Retention

Engineering Interface-Type Resistance Switching Based on Forming Current Compliance in ITO/Ga2O3:ITO/TiN Resistance Random Access Memory: Conduction Mechanisms, Temperature Effects, and Electrode Influence

Inert Pt electrode switching mechanism after controlled polarity-forming process in In2O3-based resistive random access memory

Highly Transparent Bipolar Resistive Switching Memory in Zr0.5Hf0.5O2 Films with Amorphous Semiconducting In–Ga–Zn–O As Electrode

Reproducible Unipolar Resistance Switching in Stoichiometric ZrO2 Films

Characteristics And Mechanism Of Conduction/Set Process In Tin/Zno/Pt Resistance Switching Random-Access Memories

Influence of Metal Electrode on the Performance of ZnO Based Resistance Switching Memories

Improvement of resistive switching characteristics in ZrO2 film by embedding a thin TiOx layer.

Activation Energy and Bipolar Switching Properties for the Co-Sputtering of ITOX:SiO2 Thin Films on Resistive Random Access Memory Devices

Resistance Switching Characteristics Induced By O-2 Plasma Treatment Of An Indium Tin Oxide Film For Use As An Insulator In Resistive Random Access Memory

Highly Uniform Resistive Switching Characteristics of Tin/Zro2/Pt Memory Devices

Bipolar Resistive Switching Characteristics Of Low Temperature Grown Zno Thin Films By Plasma-Enhanced Atomic Layer Deposition

Bistable Resistance Switching of Cu/Ti:ZrO2/Pt for Nonvolatile Memory Application

Studies on Al-doped ZnO Thin-Film Transistors with Pb(Zr0.3Ti0.7)O3 Gate Insulator