Abstract:The HfOx-based resistive random access memory (RRAM) has been extensively investigated as one of the emerging nonvolatile memory (NVM) candidates due to its excellent memory performance and compatibility with CMOS process. In this study, the influences of deposition ambient, especially the oxygen partial pressure during thin film sputtering, on the resistive switching characteristics are discussed in detail for possible nonvolatile memory applications. The Ni/HfOx/TiN RRAMs are fabricated, and the HfOx films with different oxygen content are deposited by a radio frequency magnetron sputtering at room temperature under different oxygen partial pressures. The oxygen partial pressures in the sputter deposition process are 2%, 4% and 6% relative to engineer oxygen content in the HfOx film. Current-voltage (I-V) measurements, X-ray photoelectron spectroscopy, and atomic force microscopy are performed to explain the possible nature of the stable resistive switching phenomenon. Through the current-voltage measurement, typical resistive switching behavior is observed in Ni/HfOx/TiN device cells. It is found that with the increase of the oxygen partial pressure during the preparation of HfOx films, the stoichiometric ratio of O in the film is improved, the root mean square (RMS) of the surface roughness of the film slightly decreases due to the slower deposition rate under a higher oxygen partial pressure, and the high resistance state (HRS) current decreases. In addition, by controlling the oxygen content of the device, the endurance performance of the device is improved, which reaches up to 10 3 under a 6% oxygen partial pressure. The HfOx films prepared at a higher oxygen partial pressure supply enough oxygen ions to preserve the switching effect. As the oxygen partial pressure increases, the uniformity of the switching voltage is improved, which can be attributed to the fact that better oxidation prevents the point defects (oxygen vacancies) from aggregating into extended defects. Through the linear fitting and temperature test, it is found that the conduction mechanism of Ni/HfOx/TiN RRAM device cells in low resistance state is an ohmic conduction mechanism, while in high resistance state it is a Schottky emission mechanism. The interface between TE and the oxide layer (HfOx) is expected to influence the resistive switching phenomenon. The activation energy of the device is investigated based on the Arrhenius plots in HRS. A switching model is proposed according to the theory of oxygen vacancy conductive filament. Furthermore, the self-compliance behavior is found and explained.

Inert Pt electrode switching mechanism after controlled polarity-forming process in In2O3-based resistive random access memory

Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory

A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memory

Oxygen-ion-migration-modulated Bipolar Resistive Switching and Complementary Resistive Switching in Tungsten/indium Tin Oxide/gold Memory Device

Influence Of Electrode Material On The Resistive Memory Switching Property Of Indium Gallium Zinc Oxide Thin Films

Electrode-Dependent Resistive Switching Characteristics of Sr(Ti,Sn)O-3 Thin Films

Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition

Engineering Interface-Type Resistance Switching Based on Forming Current Compliance in ITO/Ga2O3:ITO/TiN Resistance Random Access Memory: Conduction Mechanisms, Temperature Effects, and Electrode Influence

Modifying Indium-Tin-Oxide by Gas Cosputtering for Use As an Insulator in Resistive Random Access Memory

Resistance Switching Characteristics Induced By O-2 Plasma Treatment Of An Indium Tin Oxide Film For Use As An Insulator In Resistive Random Access Memory

Studies on nonvolatile resistance memory switching behaviors in InGaZnO thin films

Enhanced Resistive Switching Performance in Bilayer Pt/TiO2/Co3O4/Pt Memory Device

Influneces of Different Oxygen Partial Pressures on Switching Properties of Ni/HfOx/TiN Resistive Switching Devices

Activation Energy and Bipolar Switching Properties for the Co-Sputtering of ITOX:SiO2 Thin Films on Resistive Random Access Memory Devices

Unipolar Resistive Switching and Mechanism in Gd-doped-TiO2-based Resistive Switching Memory Devices

EFFECTS OFTiOxINTERLAYER ON RESISTANCE SWITCHING OFPt/TiOx/ZnO/n+-SiSTRUCTURES

Characteristics and Mechanism of Conduction/set Process in TiN∕ZnO∕Pt Resistance Switching Random-Access Memories

Insights to the influences of electroforming process on resistive switching types in Pt/InGaZnO/W memory device

Interfacial reaction induced digital-to-analog resistive switching in TiO2-based memory devices

Resistive Switching Characteristics of Resistive Random Access Memory Based on a Ba X Sr 1-X TiO 3 Thin Film Grown by a Hydrothermal Method

Multilevel Resistive Switching in Ag/Sio2/Pt Resistive Switching Memory Device