Electroluminescence refrigeration in semiconductors

shuiqing yu,dongyan ding,jiangbo wang,s r johnson,yonghang zhang

DOI: https://doi.org/10.1109/CLEO.2006.4628594

2006-01-01

Abstract:An InGaAs light emitting diode monolithically integrated with a suspended lens is proposed as a prototype semiconductor electroluminescence refrigeration device. Simulations predict that a temperature drop up to 6degC is achievable in this device.

What problem does this paper attempt to address?

Investigations on Coupling Between Performance and External Operational Conditions for a Semiconductor Refrigeration System

Yijian He,Chao Cao,Jie Wu,Guangming Chen

DOI: https://doi.org/10.1016/j.ijrefrig.2019.09.021

IF: 4.14

2020-01-01

International Journal of Refrigeration

Abstract:Semiconductor refrigeration utilizes Peltier effects to achieve cooling, and does not use any refrigerants. Due to its simple and compact structure, semiconductor refrigeration has become one of the most promising cooling technologies. However, as a semiconductor refrigeration system, the interactions among the main external factors that affect its performance are complicated. Based on experimental results and thermodynamic models, deeper insights are presented into semiconductor refrigeration in this study. Broader coupling between performance and main external parameters are analyzed, including the driving voltage of fans at both the hot and cold sides, and the working voltage of the semiconductor refrigeration chip. Optimal external parameters corresponding to a maximum COP and a maximum cooling capacity are obtained. For example, under the optimal working voltage of a semiconductor refrigeration chip with a fan driving voltage of 4 V at the hot side and 6 V at the cold side, Q(c,max) was increased by 60%, and was 326% higher than chips under 2 V and 10 V working voltages. Under the optimal fan driving voltage at the hot side with a 6 V fan driving voltage at the cold side and a 3 V working voltage of the chip, the maximum value of COP was respectively 140.3% and 104.3% larger than those with 0 V and 12 V fan driving voltages at the hot side. It is also found that the driving voltage of fans at the hot side has a greater influence on the optimal working voltage of a semiconductor refrigeration chip. This investigation could be applied in the optimization of the design and operational control of semiconductor refrigeration systems. (C) 2019 Elsevier Ltd and IIR. Allrights reserved.
Electroluminescence from Si Nanocrystal/c-Si Heterojunction Light-Emitting Diodes

Dawei Di,Ivan Perez-Wurfl,Lingfeng Wu,Yidan Huang,Alessandro Marconi,Andrea Tengattini,Aleksei Anopchenko,Lorenzo Pavesi,Gavin Conibeer

DOI: https://doi.org/10.1063/1.3671671

IF: 4

2011-01-01

Applied Physics Letters

Abstract:Silicon nanocrystals have shown attractive properties for photonic and photovoltaic applications. We demonstrate all-Si light-emitting diodes based on boron-doped Si nanocrystal/c-Si p-n heterojunction structure, which show electroluminescence in the visible/infrared regions. The electroluminescence spectra of these diodes can be modified by changing the quantum confining barriers from SiO2 to Si3N4. Our results are an important demonstration of electroluminescence from boron-doped Si nanocrystals—a wide band gap absorber material for third generation photovoltaics.
Reduced Surface Recombination in Extended-Perimeter LEDs toward Electroluminescent Cooling

Luc M. van der Krabben,Natasha Gruginskie,Maarten van Eerden,Jasper van Gastel,Peter Mulder,Gerard J. Bauhuis,Dinar Khusyainov,Dima Afanasiev,Elias Vlieg,John J. Schermer

DOI: https://doi.org/10.1021/acsaelm.3c01816

IF: 4.494

2024-02-13

ACS Applied Electronic Materials

Abstract:III-V semiconductor light-emitting diodes (LEDs) are a promising candidate for demonstrating electroluminescent cooling. However, exceptionally high internal quantum efficiency designs are paramount to achieving this goal. A significant loss mechanism preventing unity internal quantum efficiency in GaAs-based devices is nonradiative surface recombination at the perimeter sidewall. To address this issue, an unconventional LED design is presented, in which the distance from the central current injection area to the device's perimeter is extended while maintaining a constant front contact grid size. This approach effectively moves the perimeter beyond the lateral spread of current at an operating current density of 101-102 A/cm2. In p-i-n GaAs/InGaP double heterojunction LEDs fabricated with varying sizes and perimeter extensions, a 19% relative increase in external quantum efficiency is achieved by extending the perimeter-to-contact distance from 25 to 250 μm for a front contact grid size of 450 × 450 μm2. Utilizing an in-house developed Photon Dynamics model, the corresponding relative increase in internal quantum efficiency is estimated to be 5%. These results are ascribed to a significant reduction in perimeter recombination due to a lower perimeter-to-surface area (P/A) ratio. However, in contrast to lowering the P/A ratio by increasing the front contact grid size of LEDs, the present method enables these improvements without affecting the required maximum current density in the microscopic active LED area under the front contact grid. These findings aid in the advancement of electroluminescent cooling in LEDs and could prove useful in other dedicated semiconductor devices where perimeter recombination is limiting.

materials science, multidisciplinary,engineering, electrical & electronic
Microfluidic cooling of semiconductor light emission diodes

Z. M. Wang,K. Bao,L. P. Xu,C. X. Luo,B. Zhang,H. Ji,Q. Ouyang,Y. Chen

DOI: https://doi.org/10.1016/j.mee.2007.01.188

IF: 2.3

2007-01-01

Microelectronic Engineering

Abstract:Optical properties of GaN-based light emission diode (LED) cooled with microfluidics have been studied as a function of injection currents at different water flow rates. Without cooling, the quantum efficiency of the LED emission degrades for large injection currents because of the limited heat dissipation. With microfluidic cooling, the maximum achievable injection current and the maximum light emission intensity increase with the water flow rate. Correspondingly, the red-shifts of the emission peaks are reduced in the whole range of the injection currents when the LED is cooled. Such a simple technique should also be applicable to other types of LEDs or high density LED arrays.
Charge and thermal modeling of a semiconductor-based optical refrigerator

Yurii V. Morozov,Shubin Zhang,Boldizsar Janko,Masaru Kuno

DOI: https://doi.org/10.1063/1.5049376

IF: 4

2018-10-29

Applied Physics Letters

Abstract:Despite multiple attempts to achieve optical refrigeration in very high (99.5%) external quantum efficiency (EQE) GaAs, no cooling has been observed to date. In this study, we investigate optical refrigeration in GaAs by numerically solving the transient drift-diffusion equation coupled to Poisson's equation. The charge carrier distributions we obtain, together with the heat diffusion equation, allow us to observe the spatial and temporal evolution of cooling/heating within GaAs. Our results indicate that maximum cooling occurs at a laser intensity different from that which maximizes EQE. An 11-fold difference in intensity exists with a corresponding 6-fold difference in cooling power. We ultimately find that samples suspended in vacuum using a 250 μm SiO2 fiber cool to 88 K, starting from room temperature. These results emphasize the critical importance of choosing an appropriate laser excitation intensity to achieve optical refrigeration along with minimizing the conductive heat load on the refrigerator. Furthermore, results of this study are applicable towards analyzing the optical response of other optoelectronic systems where accurate charge and/or heat diffusion modeling is critical.

physics, applied
Unusual Strategies For Using Indium Gallium Nitride Grown On Silicon (111) For Solid-State Lighting

Hoon-sik Kim,Eric Brueckner,Jizhou Song,Yuhang Li,Seok Kim,Chaofeng Lu,Joshua Sulkin,Kent Choquette,Yonggang Huang,Ralph G Nuzzo,John A Rogers

DOI: https://doi.org/10.1073/pnas.1102650108

2011-01-01

Abstract:Properties that can now be achieved with advanced, blue indium gallium nitride light emitting diodes (LEDs) lead to their potential as replacements for existing infrastructure in general illumination, with important implications for efficient use of energy. Further advances in this technology will benefit from reexamination of the modes for incorporating this materials technology into lighting modules that manage light conversion, extraction, and distribution, in ways that minimize adverse thermal effects associated with operation, with packages that exploit the unique aspects of these light sources. We present here ideas in anisotropic etching, microscale device assembly/integration, and module configuration that address these challenges in unconventional ways. Various device demonstrations provide examples of the capabilities, including thin, flexible lighting "tapes" based on patterned phosphors and large collections of small light emitters on plastic substrates. Quantitative modeling and experimental evaluation of heat flow in such structures illustrates one particular, important aspect of their operation: small, distributed LEDs can be passively cooled simply by direct thermal transport through thin-film metallization used for electrical interconnect, providing an enhanced and scalable means to integrate these devices in modules for white light generation.
Laser Cooling of Germanium Semiconductor Nanocrystals

Manuchehr Ebrahimi,Wei Sun,Amr S. Helmy,Nazir P. Kherani

DOI: https://doi.org/10.48550/arXiv.2101.04833

2021-01-13

Mesoscale and Nanoscale Physics

Abstract:Laser cooling of matter through anti-Stokes photoluminescence, where the emitted frequency of light exceeds that of the impinging laser by virtue of absorption of thermal vibrational energy, has been successfully realized in condensed media, and in particular with rare earth doped systems achieving sub-100K solid state optical refrigeration. Studies suggest that laser cooling in semiconductors has the potential of achieving temperatures down to ~10K and that its direct integration can usher unique high-performance nanostructured semiconductor devices. While laser cooling of nanostructured II-VI semiconductors has been reported recently, laser cooling of indirect bandgap semiconductors such as group IV silicon and germanium remains a major challenge. Here we report on the anomalous observation of dominant anti-Stokes photoluminescence in germanium nanocrystals. We attribute this result to the confluence of ultra-high purity nanocrystal germanium, generation of high density of electron-hole plasma, the inherent degeneracy of longitudinal and transverse optical phonons in non-polar indirect bandgap semiconductors, and commensurate spatial confinement effects. At high laser intensities, laser cooling with lattice temperature as low as ~50K is inferred.
Thermodynamic analysis of optical refrigeration in semiconductors

dongyan ding,j b wang,s q yu,s r johnson,y h zhang

DOI: https://doi.org/10.1109/QELS.2005.1549320

2005-01-01

Abstract:The cooling efficiency and optimum bandgap energy for semiconductor optical refrigeration are investigated from the standpoint of both the first and second laws of thermodynamics.
Laser Cooling Of A Semiconductor By 40 Kelvin: An Optical Refrigerator Based On Cadmium Sulfide Nanoribbons

Jun Zhang,Dehui Li,Renjie Chen,Qihua Xiong

DOI: https://doi.org/10.1117/12.2002713

2013-01-01

Abstract:We have demonstrated the first net laser cooling of semiconductors using CdS nanoribbons (or nanobelts) in this work. This net cooling effect is found to be facilitated by resonant high order annihilation of longitudinal optical (LO) phonons due to a strong exciton-LO phonon Frohlich interactions. Using a pump-probe luminescence thermometry technique to measure the local temperature change, we have achieved as large as 40 K cooling temperature from room temperature pumped by a 514 nm laser while a 532 nm laser pumping led to a cooling of 20 K. At 100 K, only the 532 nm laser pumping can lead to a net cooling of around 15 K. Our work opens new directions to search laser cooling semiconductors and makes it feasible to achieve all solid-state cryocoolers based on semiconductors.
Current Driving Er-Doped Electroluminescence Devices With Long-Term Reliability

Jie Hu,Houwei Pang,Yuan Wang,Deren Yang,Dongsheng Li

DOI: https://doi.org/10.1109/LED.2023.3235716

IF: 4.8157

2023-01-01

IEEE Electron Device Letters

Abstract:An Erbium doped light emitting device characterized with long-term reliability has been realized. The devices are based on npn heterojunction structure which are composed of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${n}^{+}$ </tex-math></inline-formula> -Si/ <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -Si/Er-doped <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${n}$ </tex-math></inline-formula> -ZnO. The electroluminescence intensity of Er3+ ions has a well linear relation with operating currents. Meanwhile, the Er3+ ions electroluminescence device with a 3 V onset voltage can keep on operating for more than 1200 hours, attributed to the separation of supply and acceleration of electrons which excite Er3+ ions. Electrons originated from the former <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${n}^{+}{p}$ </tex-math></inline-formula> junction diffuse through <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -Si layer, then they are accelerated in the following space charge region of the latter pn junction to collide with Er3+ ions in ZnO layer. Moreover, the npn heterojunction device structure is also applicable to other rare earths such as Tm, Eu, etc. This strategy will pave a way to electroluminescence of rare earths, and also provide a monolithic silicon light source to integrated silicon photonics.
Breakthrough of optical refrigeration: Laser cools a semiconductor by 40 K

Jun Zhang,Dehui Li,Qihua Xiong

2013-01-01

Laser focus world

Abstract:Optical refrigeration has reached a new stage in which semiconductors can be substantially cooled by laser light. This process could become practical for cooling electronics and optoelectronics, possibly leading to athermal lasers.
Advances in Research on Semiconductor Super-lattice Micro-refrigerators

RUAN Lei,WU Yun-feng,CHEN Zhen-long,Liu Lin,WANG Yu-lin,YE Yu-tang

DOI: https://doi.org/10.3969/j.issn.1672-8785.2007.10.001

2007-01-01

Abstract:A new kind of semiconductor device,a super-lattice micro-refrigerator,was introduced and analyzed.Three aspects of its development:theory,experiment and the integration with elec- tronic/optoelectronic devices were introduced.Furthermore,the foreground and fields of its application were analyzed.
A Thermal Analysis of the Operation of Microscale, Inorganic Light-Emitting Diodes

Chaofeng Lu,Yuhang Li,Jizhou Song,Hoon-Sik Kim,Eric Brueckner,Bo Fang,Keh-Chih Hwang,Yonggang Huang,Ralph G. Nuzzo,John A. Rogers

DOI: https://doi.org/10.1098/rspa.2012.0225

2012-01-01

Abstract:An analytical model is developed to study the thermal properties of microscale, inorganic light-emitting diodes (μ-ILEDs) with ultra-thin geometries and layouts. The predicted surface and μ-ILED temperatures agree well with experiments and finite-element simulations. A simple scaling law is obtained for the normalized μ-ILED temperature versus the normalized μ-ILED size. This study provides a theory to guide the design of layouts that minimize adverse thermal effects on the performance of μ-ILEDs not only for solid-state lighting but also for applications integrating μ-ILED devices on complex/soft substrate as are currently of interest in optogenetics and other emerging areas in biology.
Cryogenic Characteristics of GaAs-based Near-Infrared Light Emitting Diodes

Peng Bai,Yueheng Zhan,Tianmeng Wang,Zhiwen Shi,Xueqi Bai,Chaoying Zhou,Yaning Xie,Lujie Du,Mengting Pu,Zhanglong Fu,Juncheng Cao,Xuguang Guo,Wenzhong Shen

DOI: https://doi.org/10.1088/1361-6641/ab6dbf

IF: 2.048

2020-01-01

Semiconductor Science and Technology

Abstract:High performance infrared light emitting diodes (LEDs) have drawn wide attention because of their significant applications in biomedicine, agriculture, aquaculture, night vision security systems and scientific researches. Due to the rapid development of infrared up-conversion devices, especially in the terahertz region, the studies on the GaAs-based infrared LEDs operating at low temperature (<20 K) are quite needed. In this paper, two representative GaAs-based LEDs (GaAs/AlGaAs double heterostructure LED (DH-LED) and GaAs (InGaAs)/AlGaAs quantum well infrared LED (QW-LED)) are fabricated and characterized with electroluminescence (EL) spectroscopy and electroluminescence efficiency (ELE) at different temperatures. The ELE of the QW-LED is about 70% higher at low temperatures (<150 K) but lower at high temperatures (>150 K) than that of the DH-LED. A developed rate equation method is used to analyze the ELE superiority of the QW-LED. Finally, the surface EL uniformity of the two LEDs is studied by using the charge coupled devices imaging. This study provides a guidance to choose and design LED structures for different operation temperatures.
AC-Driven Multicolor Electroluminescence from a Hybrid WSe2 Monolayer/AlGaInP Quantum Wells Light-Emitting Device

Ya-Hui Chang,Yen-Shou Lin,Konthoujam James Singh,Hsiang-Ting Lin,Chiao-Yun Chang,Zheng-Zhe Chen,Yu-Wei Zhang,Shih-Yen Lin,Hao-Chung Kuo,Min-Hsiung Shih

DOI: https://doi.org/10.1039/d2nr03725d

IF: 6.7

2022-12-10

Nanoscale

Abstract:Light-emitting diodes (LEDs) are used widely, but when operated on low-voltage direct current (DC), they consume unnecessary power because a converter must be used to convert alternating current (AC). DC flow across devices also causes charge accumulation under high current density, leading to lowered LED reliability. By contrast, gallium-nitride-based LEDs can be operated without an AC–DC converter being required, potentially leading to greater energy efficiency and reliability. This study developed a multicolor AC-driven light-emitting device by integrating the WSe2 monolayer and AlGaInP–GaInP multiple quantum well (MQW) structures. The CVD-grown WSe2 monolayer was placed on the top of an AlGaInP-based light-emitting diode (LED) wafer to create a two-dimensional/three-dimensional heterostructure. The interfaces of the hybrid devices are characterized and verified through transmission electron microscopy and energy-dispersive X-ray spectroscopy techniques. More than 20% energy conversion from the AlGaInP MQWs to the WSe2 monolayer was observed to boost the WSe2 monolayer emissions. The voltage dependence of the electroluminescence intensity was characterized. Electroluminescence intensity–voltage characteristic curves indicated that thermionic emission was the mechanism underlying carrier injection across the potential barrier at the Ag–WSe2 monolayer interface under low voltage, whereas Fowler–Nordheim emission was the mechanism at voltages higher than approximately 8.0 V. This multi-color hybrid light-emitting devices both expand the wavelength range of 2-D TMDC-based light emitters and support their implementation in such applications as chip-scale optoelectronic integrated systems, broad-band LEDs, and quantum display systems.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Solid-State Semiconductor Optical Cryocooler Based on CdS Nanobelts

Dehui Li,Jun Zhang,Xinjiang Wang,Baoling Huang,Qihua Xiong

DOI: https://doi.org/10.1021/nl501831f

IF: 10.8

2014-07-29

Nano Letters

Abstract:We demonstrate the laser cooling of silicon-on-insulator (SOI) substrate using CdS nanobelts. The local temperature change of the SOI substrate exactly beneath the CdS nanobelts is deduced from the ratio of the Stokes and anti-Stokes Raman intensities from the Si layer on the top of the SOI substrate. We have achieved a 30 and 20 K net cooling starting from 290 K under a 3.8 mW 514 nm and a 4.4 mW 532 nm pumping, respectively. In contrast, a laser heating effect has been observed pumped by 502 and 488 nm lasers. Theoretical analysis based on the general static heat conduction module in the Ansys program package is conducted, which agrees well with the experimental results. Our investigations demonstrate the laser cooling capability of an external thermal load, suggesting the applications of II-VI semiconductors in all-solid-state optical cryocoolers.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Analysis of Optothermionic Refrigeration Based on Semiconductor Heterojunction

P Han,KJ Jin,YL Zhou,X Wang,ZS Ma,SF Ren,AG Mal'shukov,KA Chao

DOI: https://doi.org/10.1063/1.2188249

IF: 2.877

2006-01-01

Journal of Applied Physics

Abstract:We have examined the theory of optothermionic refrigeration combining the ideas of laser cooling and thermionic cooling [Mal’shukov and Chao, Phys. Rev. Lett. 86, 5570 (2001)] and its estimation on thermal energy extraction by using self-consistent calculations with the drift-diffusion model in this paper. Both the Auger and the Shockley-Read-Hall dissipation processes are considered. For GaAs∕AlGaAs systems with various impurity concentrations and different widths of quantum well, it is found that the optothermionic cooler can extract thermal energy at a rate as much as 10W∕cm2. The information to perform optothermionic refrigeration in real devices have also been provided.
A semiconductor refrigerator

肖长亮,王铭,李春阳,李鹏,张进

2015-01-06

Abstract:The present invention provides a semiconductor refrigerator. The refrigerator includes a semiconductor substrate and a plurality of semiconductor cooling systems for supplying power to a plurality of semiconductor coolers, refrigerators provided with a plurality of semiconductor temperature zones, each temperature zone by one or more peltier cooling sheet; power supply systems configured to supply power to the semiconductor substrate a plurality of cooling zone, respectively. With the present embodiment of the invention, a plurality of semiconductor coolers are a plurality of cooling temperature zone, the power supply system and the use of a semiconductor substrate a plurality of cooling zone, respectively, by applying different voltages to the semiconductor cooling plate such that different temperature zones peltier different cooling capacity of the sheet, so that the different temperature zones to achieve different temperature storage environment, different types of storage to meet the requirements of the article. And may also be selected from a plurality of power conversion apparatus having a different voltage output range of the power conversion apparatus in compliance with the requirements of the power semiconductor cooling sheet supply power, to improve the energy efficiency of the semiconductor refrigerator.

Engineering,Materials Science
Demonstration of Net Laser Cooling in a Semiconductor

Dehui Li,Jun Zhang,Qihua Xiong

DOI: https://doi.org/10.1142/s2251158x1300026x

2013-01-01

Asia Pacific Physics Newsletter

Abstract:Laser cooling of solids was first proposed by Pringsheim in 1929, more than 30 years before the invention of laser. With the advantages of being compact and free of vibration and cryogen, the laser cooling of solids shows very promising applications such as all solid-state cryocoolers and atheraml lasers. The basic principle of laser cooling in solids is based on the anti-Stokes luminescence, during which the emitted photons carry more energy than the incident photons. The thermal energy contained in lattice vibrations in solids is carried away by the emitted photons during the anti-Stokes luminescence processes resulting in the cooling of solids. To achieve net laser cooling, there are very strict requirements for materials: high external quantum efficiency, high crystalline quality and properly spaced energy levels. So far, the materials suitable for laser cooling are confined to rare-earth doped glasses or direct band gap semiconductors due to those special requirements.
Using a laser to cool a semiconductor

Danhong Huang,T. Apostolova,P. M. Alsing,D. A. Cardimona

DOI: https://doi.org/10.48550/arXiv.cond-mat/0404367

2004-04-16

Abstract:A nonlocal energy-balance equation is derived for the optical absorption, photoluminescence and inelastic electron-phonon scattering, which determines the electron and hole temperatures for any given lattice temperature. The evolution of the lattice temperature is found to be determined by the difference between the power-loss density due to photoluminescence and the power-gain density due to optical absorption, as well as by the initial lattice temperature. We find that in addition to the expected decrease in the lattice temperature, the electron temperature also decreases with time. A laser-cooling power as high as 380 eV/s is predicted for the wide bandgap semiconductor AlN initially at room temperature when the pump-laser field is only 10 V/cm. Laser cooling is found to be more efficient for a large bandgap material, a weaker laser field, and a high initial lattice temperature. The laser-cooling rate then decreases as the lattice cools. The theory presented here provides quantitative predictions that can guide future experiments.

Other Condensed Matter

Electroluminescence refrigeration in semiconductors

Investigations on Coupling Between Performance and External Operational Conditions for a Semiconductor Refrigeration System

Electroluminescence from Si Nanocrystal/c-Si Heterojunction Light-Emitting Diodes

Reduced Surface Recombination in Extended-Perimeter LEDs toward Electroluminescent Cooling

Microfluidic cooling of semiconductor light emission diodes

Charge and thermal modeling of a semiconductor-based optical refrigerator

Unusual Strategies For Using Indium Gallium Nitride Grown On Silicon (111) For Solid-State Lighting

Laser Cooling of Germanium Semiconductor Nanocrystals

Thermodynamic analysis of optical refrigeration in semiconductors

Laser Cooling Of A Semiconductor By 40 Kelvin: An Optical Refrigerator Based On Cadmium Sulfide Nanoribbons

Current Driving Er-Doped Electroluminescence Devices With Long-Term Reliability

Breakthrough of optical refrigeration: Laser cools a semiconductor by 40 K

Advances in Research on Semiconductor Super-lattice Micro-refrigerators

A Thermal Analysis of the Operation of Microscale, Inorganic Light-Emitting Diodes

Cryogenic Characteristics of GaAs-based Near-Infrared Light Emitting Diodes

AC-Driven Multicolor Electroluminescence from a Hybrid WSe2 Monolayer/AlGaInP Quantum Wells Light-Emitting Device

Solid-State Semiconductor Optical Cryocooler Based on CdS Nanobelts

Analysis of Optothermionic Refrigeration Based on Semiconductor Heterojunction

A semiconductor refrigerator

Demonstration of Net Laser Cooling in a Semiconductor

Using a laser to cool a semiconductor