Nonlinear Dispersion in Silicon Photonic Wires

Nicolae C. Panoiu,Xiaoping Liu,Richard M. Osgood

DOI: https://doi.org/10.1109/cleo.2008.4552082

2008-01-01

Abstract:We present the first full theoretical and numerical analysis of the influence of the waveguide geometry and intrinsic material frequency dispersion of the nonlinearity, on the Si wires effective third-order nonlinearity and its frequency dispersion.

What problem does this paper attempt to address?

Influence of the Frequency Dispersion of the Nonlinearity of Si Wires on Dynamics of Ultra-short Optical Pulses

Nicolae C. Panoiu,Xiaoping Liu,Richard M. Osgood

DOI: https://doi.org/10.1364/fio.2008.fthl2

2008-01-01

Abstract:We present the first full theoretical and numerical analysis of the influence of the frequency dispersion of the effective optical nonlinearity of Si photonic wire waveguides on the dynamics of ultra-short optical pulse propagation.
Engineering Nonlinearities In Nanoscale Optical Systems: Physics And Applications In Dispersion-Engineered Silicon Nanophotonic Wires

R. M. Osgood,N. C. Panoiu,J. I. Dadap,Xiaoping Liu,Xiaogang Chen,I-Wei Hsieh,E. Dulkeith,W. M. J. Green,Y. A. Vlasov

DOI: https://doi.org/10.1364/AOP.1.000162

IF: 24.75

2009-01-01

Advances in Optics and Photonics

Abstract:The nonlinear optics of Si photonic wires is discussed. The distinctive features of these waveguides are that they have extremely large third-order susceptibility chi((3)) and dispersive properties. The strong dispersion and large third-order nonlinearity in Si photonic wires cause the linear and nonlinear optical physics in these guides to be intimately linked. By carefully choosing the waveguide dimensions, both linear and nonlinear optical properties of Si wires can be engineered. We review the fundamental optical physics and emerging applications for these Si wires. In many cases, the relatively low threshold powers for nonlinear optical effects in these wires make them potential candidates for functional on-chip nonlinear optical devices of just a few millimeters in length; conversely, the absence of nonlinear optical impairment is important for the use of Si wires in on-chip interconnects. In addition, the characteristic length scales of linear and nonlinear optical effects in Si wires are markedly different from those in commonly used optical guiding systems, such as optical fibers or photonic crystal fibers, and therefore guiding structures based on Si wires represent ideal optical media for investigating new and intriguing physical phenomena.
Nonlinear-optical Phase Modification in Dispersion-Engineered Si Photonic Wires.

J. I. Dadap,N. C. Panoiu,Xiaogang Chen,I-Wei Hsieh,Xiaoping Liu,Cheng-Yun Chou,E. Dulkeith,S. J. McNab,Fengnian Xia,W. M. J. Green,L. Sekaric,Y. A. Vlasov,R. M. Osgood

DOI: https://doi.org/10.1364/oe.16.001280

IF: 3.8

2008-01-01

Optics Express

Abstract:The strong dispersion and large third-order nonlinearity in Si photonic wires are intimately linked in the optical physics needed for the optical control of phase. By carefully choosing the waveguide dimensions, both linear and nonlinear optical properties of Si wires can be engineered. In this paper we provide a review of the control of phase using nonlinear-optical effects such as self-phase and cross-phase modulation in dispersion-engineered Si wires. The low threshold powers for phase-changing effects in Si-wires make them potential candidates for functional nonlinear optical devices of just a few millimeters in length.
Nonlinear Third Order Silicon Photonics Enabled by Dispersion and Subwavelength Engineering

Christian Lafforgue,Samuel Serna,Sylvain Guerber,Hongtao Lin,Joan Manel Ramirez,Guillaume Marcaud,Carlos Alonso-Ramos,Xavier Le Roux,Kathleen A. Richardson,Nicolas Dubreuil,Delphine Marris-Morini,Juejun Hu,Frédéric Boeuf,Sébastien Cremer,Stéphane Monfray,Eric Cassan,Laurent Vivien

DOI: https://doi.org/10.1364/oedi.2019.ow1c.2

2019-01-01

Abstract:Integrated photonics has for several years included in its panoply the development of functions based on third-order non-linear optical phenomena, from the generation of supercontinuum or frequency comb sources to metrology or spectroscopy on chip applications. This natural evolution, after the development of high-speed transceivers in the last few years, particularly in silicon photonics, is based on a number of compromises and still has to solve problems, particularly concerning the integration of nonlinear materials on silicon and their exploitation. The work we present addresses two directions. The first is oriented towards the development of a supercontinuum source using Nitrogen-rich photonic circuits from an industrial CMOS platform, while the second aims at the development of hybrid highly nonlinear waveguides significantly reducing the impact of twophoton absorption in the telecom window around 1,55μm by exploiting silicon slot waveguides infiltrated by chalcogenide glasses (As2S3).
Dispersion Engineering in Silicon Photonic Wires Using Thin Si 3 N 4 Conformal Dielectric Coating

Xiaoping Liu,William M. J. Green,I-Wei Hsieh,Jerry I. Dadap,Yurii A. Vlasov,Richard M. Osgood

DOI: https://doi.org/10.1364/ipnra.2008.imc7

2008-01-01

Abstract:We investigate numerically dispersion engineering in silicon photonic wires using conformal Si3N4coatings. We analyze the impact of coating thickness upon the group-velocity-dispersion and effective waveguide nonlinearity, and show broadband four-wave-mixing gain in engineered waveguides.
Conformal Dielectric Overlayers for Engineering Dispersion and Effective Nonlinearity of Silicon Nanophotonic Wires.

Xiaoping Liu,William M. J. Green,Xiaogang Chen,I-Wei Hsieh,Jerry I. Dadap,Yurii A. Vlasov,Richard M. Osgood

DOI: https://doi.org/10.1364/ol.33.002889

2008-01-01

Abstract:We introduce and study numerically a method for dispersion engineering of Si nanophotonic wires using a thin conformal silicon nitride film deposited around the Si core. Simulations show that this approach may be used to achieve the dispersion characteristics required for broadband, phase-matched, four-wave mixing processes, while simultaneously maintaining strong modal confinement within the Si core for high effective nonlinearity.
Nonlinear Optics In Si Wires On An Soi Platform

Richard M. Osgood,Oliver Chen,Andy Hsieh,Jerry Dadap,Nicolae Panoiu,Xiaoping Liu,Will Green,Yurii Hasov

DOI: https://doi.org/10.1109/GROUP4.2008.4638158

2008-01-01

Abstract:We discuss measurement of the nonlinear-optical properties of Si-wire waveguides and the design of these wires for use in on-chip waveguide applications.
Nonlinear-Optic Silicon-Nanowire Waveguides

Hirohito Yamada,Masayuki Shirane,Tao Chu,Hiroyuki Yokoyama,Satomi Ishida,Yasuhiko Arakawa

DOI: https://doi.org/10.1143/JJAP.44.6541

2005-01-01

Abstract:Using a 4-mm-long compact silicon-nanowire waveguide, we demonstrated nonlinear-optic effects such as the spectral broadening of optical short pulses due to self-phase modulation and nonlinear transmittance due to two-photon absorption. At a 12W input power level, we observed a 1.5-pi nonlinear phase shift and a strong saturation of optical output power in a sample. We also estimated the third-order nonlinear coefficient 112 and the two-photon absorption coefficient beta, and compared them with those previously reported.
Impact of Nonlinear Effects on the Silicon-Based Waveguides and Microring Resonators

Xiaozhi Liu,Bei Chen,Li'ao Ye,Lianghao Su,Yuehai Wang,Jianyi Yang

DOI: https://doi.org/10.1117/12.2662914

2023-01-01

Abstract:In the silicon-based devices, the third-order nonlinear effects containing Kerr effects, two-photon absorption (TPA), free carrier absorption (FCA) and free carrier dispersion (FCD) play the important role in the physical characteristics. In this paper, taking consideration of the linear and nonlinear effects, a comprehensive numerical analysis model based on the finite-difference-time-domain (FDTD) method is built and demonstrated. The nonlinear characteristics of the silicon-based waveguides and micro ring resonators are further discussed in the simulated results. The proposed model might provide an effective analysis method for all silicon-based devices, due to its good compatibility and accuracy.
Self-Phase Modulation and Nonlinear Loss in Silicon Nanophotonic Wires Near the Mid-Infrared Two-Photon Absorption Edge

Xiaoping Liu,Jeffrey B. Driscoll,Jerry I. Dadap,Richard M. Osgood,Solomon Assefa,Yurii A. Vlasov,William M. J. Green

DOI: https://doi.org/10.1364/oe.19.007778

IF: 3.8

2011-01-01

Optics Express

Abstract:We report an experimental study of picosecond pulse propagation through a 4-mm-long Si nanophotonic wire with normal dispersion, at excitation wavelengths from 1775 to 2250 nm. This wavelength range crosses the mid-infrared two-photon absorption edge of Si at ~2200 nm. Significant reduction in nonlinear loss due to two-photon absorption is measured as excitation wavelengths approach 2200 nm. At high input power, self-phase modulation is clearly demonstrated by the development of power-dependant spectral fringes. Asymmetry and blue-shift in the appearance of the spectral fringes at 1775 nm versus 2200 nm is further shown to originate from a strong reduction in the intra-pulse density of two-photon absorption-generated free carriers and the associated free-carrier dispersion. Analysis of experimental data and comparison with numerical simulations illustrates that the two-photon absorption coefficient β(TPA) obtained here from nanophotonic wire measurements is in reasonable agreement with prior measurements of bulk silicon crystals, and that bulk Si values of the nonlinear refractive index n(2) can be confidently incorporated in the modeling of pulse propagation in deeply-scaled waveguide structures.
Nonlinear Optics in Silicon Wire Waveguides: Towards Integrated Long Wavelength Light Sources

Kuyken Bart,Liu Xiaoping,Osgood Richard M.,Baets Roel,Roelkens Gunther,Green William M.

DOI: https://doi.org/10.1557/opl.2012.1323

2012-01-01

Abstract:Most of the research on silicon-on-insulator integrated circuits so far has been focused on applications for telecommunication. By using the large refractive index of silicon, compact complex photonic functions have been integrated on a silicon chip. However, the transparency of silicon up to 8.5 μm enables the use of the platform for the mid infrared wavelength region, albeit limited by the absorption in silicon oxide from 4 μm on. This could lead to a whole new set of integrated photonics circuits for sensing, given the distinct absorption bands of many molecules in this wavelength region. These long wavelength integrated photonic circuits would preferably need broadband or widely tunable sources to probe these absorption bands. We propose the use of nonlinear optics in silicon wire waveguides to generate light in this wavelength range. Nonlinear interactions in just a few cm of silicon wire waveguides can be very efficient as a result of both the high nonlinear index of silicon and the high optical confinement obtained in these waveguides. We demonstrate the generation of a supercontinuum spanning from 1.53 μm up to 2.55 μm in a 2 cm dispersion engineered silicon nanowire waveguide by pumping the waveguide with strong picoseconds pulses at 2.12 μm [1]. Furthermore we demonstrate broadband nonlinear optical amplification in the mid infrared up to 50 dB [2] in these silicon waveguides. By using this broadband parametric gain a silicon-based synchronously pumped optical parametric oscillator (OPO) is constructed [3]. This OPO is tunable over 70 nm around a central wavelength of 2080 nm. Finally, we also demonstrate the use of higher order dispersion terms to get phase matching between optical signals at very different optical frequencies in silicon wire waveguides. In this way we demonstrate conversion of signals at 2.44 μm to the telecommunication band with efficiencies up to +19.5 dB [4]. One particularly attractive application of such wide conversion is the possibility of converting weak signals in the mid-IR to the telecom window after which they can be detected by a high-sensitivity telecom-band optical receiver.
Linear And Nonlinear Characterization Of Silicon/Silicon-Rich Nitride Hybrid Waveguides

Xiaoyan Wang,Xiaowei Guan,Shiming Gao,Leif K. Oxenloweand,Lars H. Frandsen

2016-01-01

Abstract:Silicon/silicon-rich nitride hybrid waveguides have been proposed and experimentally demonstrated. The waveguides were measured to have a linear loss of similar to 5.60 dB/cm and a nonlinear parameter of similar to 32.3 W(-1)m(-1).
Investigation on the Interplay Between Dispersion and Nonlinearity in Subwavelength‐diameter Silica Fibers

Juan,Perry Ping Shum,Guobin Ren,Xia Yu,Guanghui Wang,Chao Lu

DOI: https://doi.org/10.1002/mop.23552

IF: 1.311

2008-01-01

Microwave and Optical Technology Letters

Abstract:A theoretical study of optical properties of subwavelength‐diameter silica fibers is presented, with an emphasis on the interplay between dispersion and nonlinearity. The normalized dispersion and effective nonlinearity are used to analyze the diameter‐dependent relative strength at all wavelengths. The dispersion and nonlinearity length are calculated for guiding waveguide dimension design for possible applications. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 2086–2090, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23552
Dispersion Engineering of Silicon Nanophotonic Wires Using a Thin Film Cladding

William M. J. Green,Xiaoping Liu,Xiaogang Chen,I-Wei Hsieh,Richard M. Osgood,Yurii A. Vlasov,Jerry I. Dadap

DOI: https://doi.org/10.1109/cleo.2008.4551614

2008-01-01

Abstract:Numerical simulations and experiments are performed to investigate the use of thin conformal silicon nitride cladding layers to engineer the dispersion properties of silicon nanophotonic waveguides.
Silicon/silicon-rich Nitride Hybrid-Core Waveguide for Nonlinear Optics

Xiaoyan Wang,Xiaowei Guan,Shiming Gao,Hao Hu,Leif K. Oxenlowe,Lars H. Frandsen

DOI: https://doi.org/10.1364/oe.27.023775

IF: 3.8

2019-01-01

Optics Express

Abstract:A silicon/silicon-rich nitride hybrid-core waveguide has been proposed and experimentally demonstrated for nonlinear applications to fill the gap between the pure silicon waveguide and the pure silicon nitride waveguide with respect to the nonlinear properties. The hybrid-core waveguide presented here leverages the advantages of the silicon and the silicon-rich nitride waveguide platforms, showing a large nonlinearity γ of 72 ± 5 W-1 m-1 for energy-efficient four-wave mixing wavelength conversion. At the same time, the drawbacks of the material platforms are dramatically mitigated, exhibiting a reduced two-photon absorption coefficient βTPA of 0.023 cm/GW resulting in an increased nonlinear figure-of-merit as large as 21.6. A four-wave-mixing conversion efficiency as large as -5.3 dB has been achieved with the promise to be larger than 0 dB. These findings are strong arguments supporting the silicon/silicon-rich nitride hybrid-core waveguide to be used for energy-efficient nonlinear photonic applications.
Dispersion Characteristics of Nonreciprocal Silicon-on-insulator Waveguide with YIG Layer

Huiying Wang,Zhi Wang,Zhiyong Li,Qiang Li,Lanlan Liu,Chongqing Wu

2019-01-01

Abstract:A C-band nonreciprocal waveguide with YIG(Bi:YIG/Ce:YIG) is designed to study nonreciprocal propagation of surface magnetoplasmons. The dispersion equation is calculated to analyze nonreciprocal dispersion relation and time-delay characteristics. The minimum group velocity can reach 1.25×10 −4 c.
Adjusting Third-Order Nonlinear Properties in Silicon Triply Resonant Nanobeam Cavities

Xin Cui,Weiwei Zhang,Samuel Serna,Carlos Alonso-Ramos,Delphine Marris-Morini,Laurent Vivien,Jian-Jun He,Eric Cassan

DOI: https://doi.org/10.1364/josab.35.000636

2018-01-01

Abstract:We propose the use of triply resonant silicon photonic structures, based on a set of three coupled silicon nanobeam cavities, to engineer third-order nonlinearities. We show that a judicious selection of the opto-geometrical parameters allows a nearly independent tuning of the linear and nonlinear properties of the system. We demonstrate that longitudinally shifting the central cavity weakly affects the system nonlinear properties while strongly changing its resonance wavelengths. In contrast, longitudinally shifting one of the side cavities leads to a significant variation of the self-phase modulation, cross-phase modulation, and four-wave mixing nonlinear overlaps, while the linear properties of the three-cavity photonic molecule are then only moderately tuned. This geometrical control of the nonlinear properties of photonic molecules opens new degrees of freedom for the realization of small footprint and efficient optical switching and frequency conversion devices.
Silicon Coupled Cavities As a Flexible Platform for Integrated Nonlinear Photonics

Xin Cui,Weiwei Zhang,Samuel Serna,Xavier Le Roux,Carlos Alonso-Ramos,Delphine Marris-Morini,Laurent Vivien,Jian-Jun He,Eric Cassan

DOI: https://doi.org/10.1117/12.2305909

2018-01-01

Abstract:Multiply resonant silicon photonic devices based on three coupled nanobeam cavities are proposed engineer third order nonlinearities at wavelengths around lambda = 1.55 mu m. We show that varying the geometrical parameters allows a flexible tuning of linear properties of the system, especially the deviations between the cavity resonance wavelengths. Based on the linear regime results, the nonlinear properties of the system are studied using coupled mode expressions of the super-modes given by the Tight-Binding method for the calculation of the nonlinear integrals controlling the intensity of the third-order nonlinear effects of the photonic molecules. We geometrically control the self-phase modulation (SPM), the cross-phase modulation (XPM), and the degenerate four-wave mixing (DFWM) nonlinear coefficients of the three coupled nanobeam cavities and identify general trends for nonlinear applications such as optical switching and frequency conversion devices.
Si-wire Waveguide Nonlinear-Optic Device with Strong Optical Field Confinement

H. Yamada,M. Shirane,T. Chu,S. Ishida,Y. Arakawa,H. Yokoyama

DOI: https://doi.org/10.1364/nlo.2004.tha5

2004-01-01

Abstract:Spectral broadening of optical pulses based on the nonlinear effect in a Si-wire waveguide was demonstrated for the first time. Spectra of 2-ps optical pulses from a mode-locked laser diode were obviously broadened in a 4-mm long Si-wire waveguide.

Nonlinear Dispersion in Silicon Photonic Wires

Influence of the Frequency Dispersion of the Nonlinearity of Si Wires on Dynamics of Ultra-short Optical Pulses

Engineering Nonlinearities In Nanoscale Optical Systems: Physics And Applications In Dispersion-Engineered Silicon Nanophotonic Wires

Nonlinear-optical Phase Modification in Dispersion-Engineered Si Photonic Wires.

Nonlinear Third Order Silicon Photonics Enabled by Dispersion and Subwavelength Engineering

Dispersion Engineering in Silicon Photonic Wires Using Thin Si 3 N 4 Conformal Dielectric Coating

Conformal Dielectric Overlayers for Engineering Dispersion and Effective Nonlinearity of Silicon Nanophotonic Wires.

Nonlinear Optics In Si Wires On An Soi Platform

Nonlinear-Optic Silicon-Nanowire Waveguides

Impact of Nonlinear Effects on the Silicon-Based Waveguides and Microring Resonators

Self-Phase Modulation and Nonlinear Loss in Silicon Nanophotonic Wires Near the Mid-Infrared Two-Photon Absorption Edge

Nonlinear Optics in Silicon Wire Waveguides: Towards Integrated Long Wavelength Light Sources

Linear And Nonlinear Characterization Of Silicon/Silicon-Rich Nitride Hybrid Waveguides

Investigation on the Interplay Between Dispersion and Nonlinearity in Subwavelength‐diameter Silica Fibers

Dispersion Engineering of Silicon Nanophotonic Wires Using a Thin Film Cladding

Silicon/silicon-rich Nitride Hybrid-Core Waveguide for Nonlinear Optics

Dispersion Characteristics of Nonreciprocal Silicon-on-insulator Waveguide with YIG Layer

Adjusting Third-Order Nonlinear Properties in Silicon Triply Resonant Nanobeam Cavities

Silicon Coupled Cavities As a Flexible Platform for Integrated Nonlinear Photonics

Si-wire Waveguide Nonlinear-Optic Device with Strong Optical Field Confinement