High-performance uniform stepper-based InP double-heterojunction bipolar transistor (DHBT) on a 3-inch InP substrate
Seung Heon Shin,Hyeon-Seok Jeong,Yong-Hyun Kim,Yong-Soo Jeon,Ji-Min Beak,Wan-Soo Park,In-Geun Lee,Jacob Yun,Ted Kim,Jae-Hak Lee,Hyuk-Min Kwon,Dae-Hyun Kim
DOI: https://doi.org/10.1016/j.sse.2024.108933
IF: 1.916
2024-04-18
Solid-State Electronics
Abstract:In this paper, InP Double-Heterojunction Bipolar Transistors (DHBTs) on a 3-inch InP substrate is demonstrated through stepper-based photolithography. The performance of the fabricated InP DHBTs such as DC characteristics, high-frequency characteristics, and uniformity of the 3-inch wafer is investigated to verify the stepper-based fabrication process. To improve the high-frequency characteristics, the self-aligned base-emitter contact is realized by using the high height-to-width ratio and vertical sidewall emitter profile of the Au electroplating process. The fabricated DHBTs with W E = 0.6 μm and L E = 15 μm exhibits current gain ( β ) = 50 at V CE = 1.0 V and an open-base common-emitter breakdown voltage ( BV CEO ) of 5.7 V at J C = 0.01 mA/μm 2 and 7.5 V at J C = 0.1 mA/μm 2 , respectively. Moreover, the fabricated DHBTs with W E = 0.6 μm and L E = 15 μm show excellent f T of 244 GHz and f max of 221 GHz at J C = 4.4 mA/μm 2 and V CE = 1.6 V. In order to evaluate the uniformity of the fabricated DHBTs, we measure current gain ( β ) and high-frequency characteristics with W E = 0.6 μm and L E = 15 μm and the average values and standard deviation of the β, f T , and f max are β = 49.3 ± 1.9, f T = 241.4 ± 3.8 GHz, and f max = 221.5 ± 4.0 GHz, respectively. Thanks to the optimized stepper-based fabrication process, the fabricated InP DHBTs exhibit well-balanced high-frequency characteristics and excellent uniformity.
physics, condensed matter, applied,engineering, electrical & electronic