Abstract:Lattice matched n-type AlInP(100) charge selective contacts are commonly grown on n-p GaInP(100) top absorbers in high-efficiency III-V multijunction solar or photoelectrochemical cells. The cell performance can be greatly limited by the electron selectivity and valance band offset at this heterointerface. Understanding of the atomic and electronic properties of the GaInP/AlInP heterointerface is crucial for the reduction of photocurrent losses in III-V multijunction devices. In our paper, we investigated chemical composition and electronic properties of n-GaInP/n-AlInP heterostructures by X-ray photoelectron spectroscopy (XPS). To mimic an in-situ interface experiment with in-situ stepwise deposition of the contact material, 1 nm - 50 nm thick n-AlInP(100) epitaxial layers were grown on n-GaInP(100) buffer layer on n-GaAs(100) substrates by metal organic vapor phase epitaxy. We observed (2x2)/c(4x2) low-energy electron diffraction patterns with characteristic diffuse streaks along the [01-1] direction due to P-P dimers on both AlInP(100) and GaInP(100) as-prepared surfaces. Atomic composition analysis confirmed P-rich termination on both surfaces. Angle-resolved XPS measurements revealed a surface core level shift of 0.9 eV in P 2p peaks and the absence of interface core level shifts. We assigned the surface chemical shift in the P2p spectrum to P-P bonds on a surface. We found an upward surface band bending on the (2x2)/c(4x2) surfaces most probably caused by localized mid-gap electronic states. Pinning of the Fermi level by localized electronic states remained in n-GaInP/n-AlInP heterostructures. A valence band offset of 0.2 eV was derived by XPS and band alignment diagram models for the n-n junctions were suggested.

Measurements of InGaP electron ionization coefficient using InGaP-GaAs-InGaP double HBTs

InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor

Unified Explanation for Suppressed Electron Ionization Coefficient and Its Weak Temperature Dependence in InGaP

Growth of Ingan and Double Heterojunction Structure with Ingan Back Barrier

Current Transport Mechanism In Inp/Inalas/Gaassb/Inp Double Heterojunction Bipolar Transistors

Impact ionization coefficients and excess noise in Al0.55Ga0.45As0.56Sb0.44 lattice matched to InP

Avalanche Multiplication in InP/InGaAs Double Heterojunction Bipolar Transistors with Composite Collectors

Surface Recombination in InP/InAlAs/GaAsSb/InP Double Heterojunction Bipolar Transistors

Calculation of the Electron and Hole Impact Ionization Rate for Wurtzite AlN and GaN

Probing Semiconductor Band Structures and Heterojunction Interface Properties with Ballistic Carrier Emission: Gaas/Alxga1-Xas As A Model System

Band energy diagrams of n-GaInP/n-AlInP(100) surfaces and heterointerfaces studied by X-ray photoelectron spectroscopy

Nondestructive Determination of Beryllium Outdiffusion in Algaas/Gaas Heterojunction Bipolar Transistor Structures by Low-Temperature Photoluminescence

Direct Injection Tunnel Spectroscopy of a P-N Junction

Measurement and Analysis of Annealing Factor and Typical Dc Electronic Parameters for SiGe HBT Irradiated by Neutrons and Gamma Rays in a Pulsed Reactor

Direct parameter extraction method for InP heterojunction bipolar transistors based on the combination of <i>T</i>- and -models up to 110GHz

Bandgap and Band Offsets Determination of Semiconductor Heterostructures Using Three-Terminal Ballistic Carrier Spectroscopy

GaN-Based Double-Heterojunction Bipolar Transistors With a Composition Graded p-InGaN Base

Nonparabolic Multivalley Balance-Equation Approach to Impact Ionization: Application to Wurtzite GaN

Effect of Low-Energy Implantation of In+ Ions on the Composition and Electronic Structure of Single-Crystal GaP(111)

Growth and characteristics of InP/InXGa1-XAs/In0.53Ga0.47As HEMTs

Ion implantation in InGaAs/InP and novel HPT