CMOS-Compatible Ti/TiN/Al Refractory Ohmic Contact for GaAs Heterojunction Bipolar Transistors Grown on Ge/Si Substrate
Yue Wang,Wan Khai Loke,Yu Gao,Kwang Hong Lee,Kenneth Eng Kian Lee,Chee Lip Gan,Chuan Seng Tan,Eugene A. Fitzgerald,Soon Fatt Yoon
DOI: https://doi.org/10.1109/ted.2021.3119557
IF: 3.1
2021-12-01
IEEE Transactions on Electron Devices
Abstract:In this article, we demonstrate the Ti/TiN/Al (15/50/50 nm) ohmic contact on InGaP/GaAs heterojunction bipolar transistors (HBTs) epitaxially grown on 200-mm Si substrate. We study the rapid thermal annealing (RTA) effect of the metal stack on both n-type InGaAs and p-type GaAs. The dc characteristics of the HBT devices fabricated using the Ti/TiN/Al metal contacts have been analyzed. Contact resistances ${(}{R}_{c}{)} < 0.1~Omega cdot $ mm for n-InGaAs and $0.8~Omega cdot $ mm for p-GaAs can be achieved. A dc current gain of 45 with a collector–base breakdown voltage (BVcbo) of 15.65 V is achieved. The ideality factor of the emitter–base current (${n}_{b}$ ) and base–collector current (${n}_{c}$ ) is 1.03 and 1.44, respectively, after RTA at 450 °C. The dc characteristics remain stable upon prolonged annealing at 450 °C for 45 min. This high thermal budget non-gold ohmic contact is suitable for Si-CMOS integration and enables the potential for hybrid III-V CMOS technology for 5G and mm-wave applications.
engineering, electrical & electronic,physics, applied