2Kv Low Leakage Vertical NiO/β-Ga2O3 Hetero-Junction Diode and Its Thermal/Electrical Stability
Jiangbin Wan,Hengyu Wang,Haoyuan Cheng,Ce Wang,Qianqian Que,Yanjun Li,Chi Zhang,Jiabao Sun,Dong Liu,Kuang Sheng
DOI: https://doi.org/10.1109/ispsd59661.2024.10579688
2024-01-01
Abstract:This work demonstrates a vertical NiO/beta-Ga2O3 Heterojunction Diode (HJD) with a deep trench termination. The 7 mu m deep trench is etched using a self-aligned technique to reduce electric field at the anode edge. Additionally, a combined SiO2/PI/SiO2 dielectric structure is used to fill the trench and an additional field plate is also used to reduce the electric field in Ga2O3. TCAD simulations demonstrate a significant reduction in the electric field at the anode edge. The Mesa-HJD is fabricated along with the DT-HJD. The specific on resistance of them are both 2.4m Omega center dot cm(2). The fabricated DT-HJD shows a high breakdown voltage of >2kV with a doping concentration of 3x10(16)cm(-3). Consequently, a high-Power Figure of Merit (PFOM) of 1.75GW/cm(2) is hence achieved. Moreover, a remarkably low leakage current of 10(-5) A/cm(2) at 1700 reverse bias is also achieved, which is among the lowest in multi-kilovolts Ga2O3 HJDs. The results demonstrate the promising potential of Ga2O3 HJD for power electronics applications.