Abstract:Scaling of GaN high-electron-mobility transistors (HEMTs) usually increases gate leakage current and deteriorates breakdown characteristic, limiting the maximum drain current and output power density. These bottlenecks can be circumvented by inserting a dielectric material under the gate of HEMTs. Doped HfO2 is an excellent dielectric material but unexplored so far as the gate material of HEMTs for high-speed device application. Here we demonstrate that Zr-doped HfO2 (HZO)-gated InAlN/GaN metal-insulator-semiconductor (MIS) HEMTs exhibit remarkable properties. The device with a gate length (Lg) of 50 nm exhibits maximum drain current (Id,max) of 2.15 A/mm, a transconductance (gm) peak of 476 mS/mm, an on/off current ratio (Ion/Ioff) of 9.3*107, a low drain-induced barrier lowing (DIBL) of 45 mV/V. RF characterizations reveal a current gain cutoff frequency (fT) of 155 GHz and a maximum oscillation frequency (fmax) of 250 GHz, resulting in a (fT*fmax)1/2 of 197 <a class="link-external link-http" href="http://GHz.These" rel="external noopener nofollow">this http URL</a> properties, particularly the high (fT/fmax)1/2 and JFOM are highly desirable for the millimeter-wave power applications, demonstrating the great technological potential of HZO/InAlN/GaN MIS-HEMTs.

Microwave noise characteristics of AlGaN/GaN HEMTs on high-resistivity silicon substrate

Direct Current and Microwave Characteristics of Sub-Micron Algan/Gan High-Electron-Mobility Transistors on 8-Inch Si(111) Substrate

1-mm gate periphery AlGaN/AlN/GaN HEMTs on SiC with output power of 9.39W at 8GHz

11.2 W/mm power density AlGaN/GaN high electron-mobility transistors on a GaN substrate

Growth and Characterization of 0.8-Μm Gate Length AlGaN/GaN HEMTs on Sapphire Substrates

AlN/GaN HEMTs with f max Exceeding 300 GHz by Using Ge-Doped n ++ GaN Ohmic Contacts

Novel T-Shaped Gate With Air Gap for AlGaN/GaN HEMTs on Silicon With High Johnson's Figures of Merit

AlN/GaN HEMTs with Fmax Exceeding 300 GHz by Using Ge-Doped N++gan Ohmic Contacts

Broadband Microwave Noise Characteristics of High-Linearity Composite-Channel Al/sub 0.3/ga/sub 0.7/n/al/sub 0.05/ga/sub 0.95/n/gan HEMTs

8.7 W/mm output power density and 42% power-added-efficiency at 30 GHz for AlGaN/GaN HEMTs using Si-rich SiN passivation interlayer

High Frequency Noise Model of AlGaN/GaN HEMTs

Algan/Gan Hemts On Si By Mbe With Regrown Contacts And F(T)=153 Ghz

Demonstration of 16 THz V Johnson's figure-of-merit and 36 THz V f max ·V BK in ultrathin barrier AlGaN/GaN HEMTs with slant-field-plate T-gates

Scaled InAlN/GaN HEMT on Sapphire With f T /f max of 190/301 GHz

High-Temperature Characterization of AlGaN Channel High Electron Mobility Transistor Based on Silicon Substrate

Demonstration of Submicron-Gate AlGaN/GaN High-Electron-Mobility Transistors on Silicon with Complementary Metal–Oxide–Semiconductor-Compatible Non-Gold Metal Stack

AlGaN/GaN HEMTs with thermal oxidation treatment for microwave power applications

0.3-&Amp;#x00b5;m Gate-Length Metamorphic AlInAs/GaInAs HEMTs on Silicon Substrates by MOCVD

High-Performance HZO/InAlN/GaN MIS-HEMT with fT/fmax of 155/250 GHz

Improved Off-State Leakage Current and Cutoff Frequency for AlGaN/GaN HEMT by Using Silicon-on-Insulator

GaN Based HEMT Materials and Devices Fabricated on SiC Substrate