Abstract:III-nitrides based high electron-mobility transistors (HEMTs) are well-known excellent candidates for high-power, radio-frequency (rf) and high-temperature applications. However, HEMTs have to face the essential issues of high gate leakage current and drain current collapse (gate-lag), which inevitably limits the device performances and reliability. Here, we fabricate an optimized AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT), by using HfZrOx (HZO) as a gate dielectric, that can improve the interfacial and transport properties. Compared to the conventional high permittivity (high-kappa) gate dielectric HfO2 which has attracted wide attention in recent years, the concentrations of interface traps and the inside fixed oxide defects are obviously reduced by using high quality HZO layer. Through the dielectric engineering of HZO, the MOS-HEMT with HZO dielectric shows an enhanced DC output performance with an increase of 54% at the optimal working condition, which is indeed much higher than that of the HfO2 MOS-HEMT (40%). And the HZO MOS-HEMT exhibits a higher I-on/I-off ratio of 10(6), an excellent subthreshold swing (SS) of 85 mV/decade, and a higher voltage swing (GVS). The gate leakage is reduced by nearly 8 orders of magnitude compared to the conventional unpassivated HEMTs (conv. HEMT) at the gate voltage of -5 V. These results are mainly caused by the replacement of the low-height Schottky barrier (SB) and the reduction of interface traps density. In order to further investigate the interfacial and electric properties of HZO MOS-HEMT, the dynamic gate/drain voltage and high-frequency capacitance-voltage (C-V) measurements are both applied. Remarkably, no measurable current collapse and C-V hysteresis are clearly observed, showing the enhanced interfacial and electric performances of the MOS-HEMT with dielectric engineering of HZO.

Improved Off-State Leakage Current and Cutoff Frequency for AlGaN/GaN HEMT by Using Silicon-on-Insulator

Low Contact Resistance CMOS-Compatible RF GaN-on-Silicon HEMTs

Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiNx Stress-Engineering Technique

Low contact resistance and high breakdown voltage of AlGaN/GaN HEMT grown on silicon using both AlN/GaN superlattice and Al0.07Ga0.93N back barrier layer

Enhanced Performances of AlGaN/GaN HEMTs with Dielectric Engineering of HfZrOx

Effects of AlN/GaN superlattice buffer layer on performances of AlGaN/GaN HEMT grown on silicon for sub-6 GHz applications

Simulation study on electrical properties of p-GaN gate normally-off HEMT devices affected by Al mole fraction in AlGaN barrier layer

8.7 W/mm output power density and 42% power-added-efficiency at 30 GHz for AlGaN/GaN HEMTs using Si-rich SiN passivation interlayer

Improved Electrical and Deep-UV Sensing Characteristics of Al2O3-Dielectric AlGaN/AlN/SiC MOS-HFETs

AlN/GaN/InGaN Coupling-Channel HEMTs for Improved g m and Gain Linearity

Improved Algan/Gan Hemts Grown on Si Substrates Using Stacked Algan/Aln Interlayer by Mocvd

Threshold Voltage Improvement and Leakage Reduction of AlGaN/GaN HEMTs Using Dual-Layer SiNx Stressors

AlN/GaN HEMTs with f max Exceeding 300 GHz by Using Ge-Doped n ++ GaN Ohmic Contacts

Novel T-Shaped Gate With Air Gap for AlGaN/GaN HEMTs on Silicon With High Johnson's Figures of Merit

AlN/GaN HEMTs with Fmax Exceeding 300 GHz by Using Ge-Doped N++gan Ohmic Contacts

Effects of SiON/III-nitride Interface Properties on Device Performances of GaN-based Power Field-Effect Transistors

Improved Interface Properties and Dielectric Breakdown in Recessed AlGaN/GaN MOS-HEMTs Using HfSiO $_{{x}}$ As Gate Dielectric

Current-collapse Suppression and Leakage-Current Decrease in AlGaN/GaN HEMT by Sputter-Tan Gate-Dielectric Layer

Optimization of Contact Resistance and DC Characteristics for AlGaN/GaN HEMTs Utilizing Sub-10 nm Nanohole Etching

Low Leakage Current and High-Cutoff Frequency AlGaN/GaN MOSHEMT Using Submicrometer-Footprint Thermal Oxidized TiO2/NiO As Gate Dielectric

Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator