Abstract:A typical method for normally-off operation, the metal-insulator-semiconductor-high electron mobility transistor (MIS-HEMT) has been investigated. Among various approaches, gate recessed MIS-HEMT have demonstrated a high gate voltage sweep and low leakage current characteristics. Despite their high performance, obtaining low-damage techniques in gate recess processing has so far proven too challenging. In this letter, we demonstrate a high current density and high breakdown down voltage of a MIS-HEMT with a recessed gate by the low damage gate recessed etching of atomic layer etching (ALE) technology. After the remaining 3.7 nm of the AlGaN recessed gate was formed, the surface roughness (Ra of 0.40 nm) was almost the same as the surface without ALE (no etching) as measured by atomic force microscopy (AFM). Furthermore, the devices demonstrate state-of-the-art characteristics with a competitive maximum drain current of 608 mA/mm at a VG of 6 V and a threshold voltage of +2.0 V. The devices also show an on/off current ratio of 109 and an off-state hard breakdown voltage of 1190 V. The low damage of ALE technology was introduced into the MIS-HEMT with the recessed gate, which effectively reduced trapping states at the interface to obtain the low on-resistance (Ron) of 6.8 Ω·mm and high breakdown voltage performance.

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Low-temperature Grown GaAs Insulators for GaAs FET Applications

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LT-GaAs with high breakdown strength at low temperature for power MISFET applications

Effective Suppression of MIS Interface Defects Using Boron Nitride Toward High-Performance Ta-Doped-β-Ga2O3 MISFETs.

Characteristics of InAs/GaSb Line-Tunneling FETs with Buried Drain Technique

Electrical Characterization Of Gaas-Layers Grown By Molecular-Beam Epitaxy At Low-Temperature

1500 V AlGaN/GaN MIS-HEMTs Employing LPCVD-Si3N4 as Gate Insulator

Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device Applications

Improved breakdown performance in recessed-gate normally off GaN MIS-HEMTs by regrown fishbone trench

The improvement of breakdown-voltage (¿2000 V) in GaN based HFETs by using double polarization junctions

The GaN Trench Gate MOSFET with Floating Islands: High Breakdown Voltage and Improved BFOM

High Voltage InAlN/GaN HFETs Achieved by Schottky-Contact Technology for Power Applications

Study of the Breakdown Failure Mechanisms for Power AlGaN/GaN HEMTs Implemented Using a RF Compatible Process

Schottky-Contact Technology in InAlN/GaN HEMTs for Breakdown Voltage Improvement

Ultra-thin AlGaN/GaN HFET with a high breakdown voltage on sapphire substrates

Integration of Lpcvd-Sinx Gate Dielectric with Recessed-Gate E-Mode Gan Mis-Fets: Toward High Performance, High Stability and Long Tddb Lifetime

Improved High-Temperature Device Transport Properties and Off-State Characteristics of Algan/Gan Power Devices with Atomic Layer Deposition (ald) Hfalo High-K Dielectric

16.8 A/600 V AlGaN/GaN MIS-HEMTs employing LPCVD-Si3N4 as gate insulator

Study on High Breakdown Voltage GaN-based Vertical Field Effect Transistor with Interfacial Charge Engineering for Power Applications

Reduction of Saturation Voltage in InGaAs-Channel/lnGaN-Drain Vertical FETs and the Role of Traps at the InGaAs/lnGaN Junction