Abstract:As the dominated composition of Si3N4 ceramics,α-silicon nitride(α-Si3N4)can satisfy the strength and fracture toughness demand in the applications.However,α-Si3N4 is oxygen-sensitive at high tempera-tures,which limits its high-temperature performance.To improve the oxidation resistance of α-Si3N4 ce-ramics,it is necessary to shed light on the oxidation mechanism.Herein,the initial oxidation of α-Si3N4 was systematically studied at the atomic and molecular levels.The density functional theory(DFT)calcu-lation denotes that the(001)surface of α-Si3N4 has the best stability at both room temperature and high temperature.Besides,the oxidation process of the α-Si3N4(001)surface consists of O adsorption and N desorption,and the consequent formation of nitrogen-vacancy(VN)is the key step for further oxidation.Moreover,the molecular dynamics(MD)simulation indicates that the oxidation rate of α-Si3N4(100)surface is slower than that of α-Si3N4(001)surface due to the lower N concentration at the outermost layer.Therefore,the oxidation resistance of α-Si3N4 can be improved by regulating the(100)surface as the dominant exposure surface.In addition,reducing the concentration of N on the final exposed sur-face of α-Si3N4 by mean of constructing the homojunction of the Si-terminal(100)surface and other N-containing surfaces(such as(001)surface)should be also a feasible approach.

Existence of Silicon Oxynitride in Silicon Dioxide Grown by Rapid Thermal Oxidation in a Mixture of N/sub 2//o/sub 2/

Properties of "stoichiometric" Silicon Oxynitride Films

Growth Rate and Characterization of Silicon Oxide Films Grown in N 2 O Atmosphere in a Rapid Thermal Processor

FT-IR study of silicon dioxide films fabricated by rapid thermal oxidation

Silicon nanowires fabricated by thermal evaporation of silicon monoxide

Deposition of SiOxNy films as gate insulator via r.f. reactive sputtering

Effect Of Nitrogen Doping On The Dissolution Of Oxygen Precipitates In Czochralski Silicon During Rapid Thermal Annealing

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Grown-In Oxygen Precipitates in Czochralski Silicon Investigated by Transmission Electron Microscopy

New Design Concept for Stable Α-Silicon Nitride Based on the Initial Oxidation Evolution at the Atomic and Molecular Levels

Transmission Electron Microscopic Observation of Oxygen Precipitates in Nitrogen-Doped Silicon

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Infrared Spectra of Silicon Nanowires

Enhanced Oxygen Precipitation In Neutron-Irradiated Nitrogen-Doped Czochralski Silicon Crystal

Nitrogen Enhanced Oxygen Precipitation in Czochralski Silicon Wafers Coated with Silicon Nitride Films

Oxygen-related Vacancy-Type Defects in Ion-Implanted Silicon

Oxygen Precipitation in Nitrogen Doped Czochralski Silicon Wafers. I. Formation Mechanisms of Near-Surface and Bulk Defects

Ab initio calculation of the evolution of [SiN<sub>4-</sub><i><sub>n</sub></i>O<i><sub>n</sub></i>] tetrahedron during <i></i>-Si<sub>3</sub>N<sub>4</sub>(0001) surface oxidation

Thermal Acceptor Formation in Nitrogen-Doped Silicon

Reactions of Silicon Atoms with NO. Experimental and Theoretical Characterization of Molecules Containing Si, N, and O

Oxidation-Induced Stacking Faults and Related Grown-In Oxygen Precipitates in Nitrogen-Doped Czochralski Silicon