Thermal Annealing Effects of InGaAs (1.0 Ev) and InGaAs (0.7 Ev) Sub-Cells of Inverted Metamorphic Four Junction (IMM4J) Solar Cells under 1 MeV Electron Irradiation
Zhang Yan-Qing,Qi Chun-Hua,Zhou Jia-Ming,Liu Chao-Ming,Ma Guo-Liang,Tsai Hsu-Sheng,Wang Tian-Qi,Huo Ming-Xue
DOI: https://doi.org/10.7498/aps.69.20200557
IF: 0.906
2020-01-01
Acta Physica Sinica
Abstract:In this work, thermal annealing effects of InGaAs (1.0 eV) and InGaAs (0.7 eV) sub-cells for inverted metamorphic four junction (IMM4J) solar cells after being irradiated by 1 MeV electrons are investigated by using light I-V characteristic, dark I-V characteristic and spectral response. Annealing temperature range is 60–180 ℃ and annealing time is 0-180 min. The results indicate that the open-circuit voltage Voc, short-circuit current Isc, and maximum power Pmax of two sub-cells are gradually recovered with annealing time increasing, and the rate of recovery increases with annealing temperature increasing. Besides, the recovery rate of InGaAs (1.0 eV) sub-cell is less than that of InGaAs (0.7 eV) sub-cell under the same annealing temperature and time. Double exponential model is used to fit the dark I-V curve for the key parameters (the serial resistant Rs, the parallel resistant Rsh, the diffusion current Is1 and the recombination current Is2). It is found that Rs, Is1 and Is2 of two sub-cells decrease gradually and Rsh increases during annealing and the rate of recovery increases with annealing temperature rising. However, the recovery of Is1 and Is2 of InGaAs(1.0 eV) are much greater than that of InGaAs(0.7 eV). The equivalent model between short-circuit current density (Jsc) and defect concentration (N) induced by irradiation and annealing is established. N changes follow the first reaction kinetics, and the rate constant follows the Arrhenius equation with the annealing temperature. Therefore, the thermal annealing activation energy of InGaAs(1.0 eV) and InGaAs(0.7 eV) sub-cells are 0.38 eV and 0.26 eV, respectively. These efforts will contribute to the IMM4J solar cells, in particular, to space-based applications.