Abstract:In this study, the degradation characteristics of radio frequency (RF)-low-noise amplifiers (LNA) due to a total ionizing dose (TID) is investigated. As a device-under-test (DUT), sample LNAs were prepared using silicon–germanium (SiGe) heterojunction bipolar transistors (HBTs) as core elements. The LNA was based on a cascode stage with emitter degeneration for narrowband applications. By using a simplified small-signal model of a SiGe HBT, design equations such as gain, impedance matching, and noise figure (NF) were derived for analyzing TID-induced degradations in the circuit-level performance. To study radiation effects in circuits, the SiGe-RF-LNAs fabricated in a commercial 350 nm SiGe technology were exposed to 10-keV X-rays to a total ionizing dose of up to 3 Mrad(SiO2). The TID-induced performance changes of the LNA were modeled by applying degradation to device parameters. In the modeling process, new parameter values after irradiation were estimated based on information in the literature, without direct measurements of SiGe HBTs used in the LNA chip. As a result, the relative contributions of parameters on the circuit metrics were compared, identifying dominant parameters for degradation modeling. For the TID effects on input matching (S11) and NF, the base resistance (RB) and the base-to-emitter capacitance (Cπ) of the input transistor were mostly responsible, whereas the transconductances (gm) played a key role in the output matching (S22) and gain (S21). To validate the proposed approach, it has been applied to a different LNA in the literature and the modeling results predicted the TID-induced degradations within reasonable ranges.

Immunity Analysis and Experimental Investigation of a Low-Noise Amplifier Using a Transient Voltage Suppressor Diode under Direct Current Injection of HPM Pulses

Comparisons of power to failure for low-noise amplifiers under high-power microwave pulses

Experiments and Comparisons of Power to Failure for SiGe-Based Low-Noise Amplifiers under High-Power Microwave Pulses

Electrothermal breakdown of an intentional electromagnetic pulse injected into Ku-band gaas Mesfet-based low noise amplifier(LNA)

Susceptibility analysis of wideband RF receiving channel in the presence of an electromagnetic pulse (EMP)

Experimental Investigation and Analysis of the LDMOS FET Breakdown Under HPM Pulses

Transient Voltage Suppressor Diode Array Protection Circuits with Reducing Loading Effect under High-Power Microwave Pulse Injection

Protection Effects Using Transient Voltage Suppressor Diodes Based Circuits under High-Power Microwave Pulses

Analysis and Design of Wideband Low Noise Amplifier with Digital Control

Multiple Transient Voltage Suppressor Diodes-Based Protection Circuits with Decreasing Loading Effect under High-Power Microwave Pulses

Electro-Thermal-Stress analysis of a LDMOS FET Breakdown under High Power Microwave pulses

Analysis And Design Of Inductorless Wideband Low-Noise Amplifier With Noise Cancellation Technique

Improvement in Cavity and Model Designs of LDMOS Power Amplifier for Suppressing Metallic Shielding Cover Effects

Electro-thermal-stress interaction of GaN HEMT breakdown induced by high power microwave pulses

Vulnerability of L-Band LNA to the Out-of-Band HPM

Investigating A Thermal Breakdown Model and Experiments on A Silicon-Based Low-Noise Amplifier under High-Power Microwave Pulses

Mechanism of AlGaAs/InGaAs pHEMT Nonlinear Response Under High-Power Microwave Radiation

Analysis of LNA under multi-pulses IEMI

Experiment on Ka-band Amplifiers Degraded and Damaged by Electromagnetic Waves

Simple Modeling and Analysis of Total Ionizing Dose Effects on Radio-Frequency Low-Noise Amplifiers

Design and Failure Mechanism Analysis of a High-Power Limiter at DC-6 GHz with GaAs PIN Technology