Abstract:Based on the self-terminating thermal oxidation-assisted wet etching technique, two kinds of enhancement mode Al2O3/GaN MOSFETs (metal–oxide–semiconductor field-effect transistors) separately with sapphire substrate and Si substrate are prepared. It is found that the performance of sapphire substrate device is better than that of silicon substrate. Comparing these two devices, the maximum drain current of sapphire substrate device (401 mA/mm) is 1.76 times that of silicon substrate device (228 mA/mm), and the field-effect mobility (μ FEmax) of sapphire substrate device (176 cm2/V⋅s) is 1.83 times that of silicon substrate device (96 cm2/V⋅s). The conductive resistance of silicon substrate device is 21.2Ω ⋅mm, while that of sapphire substrate device is only 15.2Ω ⋅mm, which is 61% that of silicon substrate device. The significant difference in performance between sapphire substrate and Si substrate is related to the differences in interface and border trap near Al2O3/GaN interface. Experimental studies show that (i) interface/border trap density in the sapphire substrate device is one order of magnitude lower than in the Si substrate device, (ii) Both the border traps in Al2O3 dielectric near Al2O3/GaN and the interface traps in Al2O3/GaN interface have a significantly effect on device channel mobility, and (iii) the properties of gallium nitride materials on different substrates are different due to wet etching. The research results in this work provide a reference for further optimizing the performances of silicon substrate devices.

Investigation of Oxidation Process in Self-Terminating Gate Recess Wet Etching Technique for Algan/Gan Normally-Off Mosfets

Locally non-uniform oxidation in self-terminating thermal oxidation assisted wet etching technique for AlGaN/GaN heterostructure

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Oxidation-based wet-etching method for AlGaN/GaN structure with different oxidation times and temperatures

Fabrication of Normally off Algan/Gan Mosfet Using A Self-Terminating Gate Recess Etching Technique

A Novel Oxidation-Based Wet Etching Method For Algan/Gan Heterostructures

An "Ohmic-First" Self-Terminating Gate-Recess Technique for Normally-off Al2O3/GaN MOSFET

Enhanced Device Performance of AlGaN/GaN HEMTs Using Thermal Oxidation of Electron-Beam Deposited Aluminum for Gate Oxide

Enhanced Device Performance Of Algan/Gan High Electron Mobility Transistors With Thermal Oxidation Treatment

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Physical Analysis of Normally-off ALD Al2O3/GaN MOSFET with Different Substrates Using Self-Terminating Thermal Oxidation-Assisted Wet Etching Technique

Reliability Improvement of Ge Pmosfets with Al2O3 Dielectric by Ozone Post Annealing

High V th and Improved Gate Reliability in P-GaN Gate HEMTs with Oxidation Interlayer

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Investigation of Electrical Property and Thermal Stability in Enhancement-Mode InxAl1–xN/AlN/GaN MOS-HEMTs Fabricated by Using NiOx Gate and Fluorine Treatment

300°C operation of normally-off AlGaN/GaN MOSFET with low leakage current and high on/off current ratio

Improved Fabrication of Fully-Recessed Normally-off SiN/SiO2/GaN MISFET Based on the Self-Terminated Gate Recess Etching Technique

Gate-Recessed Normally OFF GaN MOSHEMT With High-Temperature Oxidation/Wet Etching Using LPCVD Si3N4 as the Mask

Current Transport Dynamics and Stability Characteristics of the NiO X Based Gate Structure for Normally-off GaN HEMTs

Normally-off P-Gan/algan/gan High-Electron-mobility Transistors Using Oxygen Plasma Treatment

O-3-Sourced Atomic Layer Deposition of High Quality Al2o3 Gate Dielectric for Normally-Off Gan Metal-Insulator-Semiconductor High-Electron-Mobility Transistors