Abstract:In advancing the study of magnetization dynamics in STT-MRAM devices, we employ the spin drift–diffusion model to address the back-hopping effect. This issue manifests as unwanted switching either in the composite free layer or in the reference layer in synthetic antiferromagnets—a challenge that becomes more pronounced with device miniaturization. Although this miniaturization aims to enhance memory density, it inadvertently compromises data integrity. Parallel to this examination, our investigation of the interface exchange coupling within multilayer structures unveils critical insights into the efficacy and dependability of spintronic devices. We particularly scrutinize how exchange coupling, mediated by non-magnetic layers, influences the magnetic interplay between adjacent ferromagnetic layers, thereby affecting their magnetic stability and domain wall movements. This investigation is crucial for understanding the switching behavior in multi-layered structures. Our integrated methodology, which uses both charge and spin currents, demonstrates a comprehensive understanding of MRAM dynamics. It emphasizes the strategic optimization of exchange coupling to improve the performance of multi-layered spintronic devices. Such enhancements are anticipated to encourage improvements in data retention and the write/read speeds of memory devices. This research, thus, marks a significant leap forward in the refinement of high-capacity, high-performance memory technologies.

Interconnects Scaling Challenge for Sub-20Nm Spin Torque Transfer Magnetic Random Access Memory Technology

Readability Challenges in Deeply Scaled STT-MRAM

Variability Study of Toggle Spin Torques Magnetic Random Access Memory

A Study of Write Margin of Spin Torque Transfer Magnetic Random Access Memory Technology

Status and Outlook of Stt-Mram Development

Multi-level cell Spin Transfer Torque MRAM based on stochastic switching

Reconfigurable Codesign of Stt-Mram under Process Variations in Deeply Scaled Technology

Architectural Exploration to Enable Sufficient MTJ Device Write Margin for STT-RAM Based Cache

A statistical study of magnetic tunnel junctions for high-density spin torque transfer-MRAM (STT-MRAM)

Dynamic Reference Sensing Scheme for Deeply Scaled STT-MRAM

Advanced Modeling and Simulation of Multilayer Spin–Transfer Torque Magnetoresistive Random Access Memory with Interface Exchange Coupling

Read disturbance issue and design techniques for nanoscale STT-MRAM.

Quantitative Evaluation of Reliability and Performance for STT-MRAM

Design Considerations and Strategies for High-Reliable STT-MRAM

Addressing the Thermal Issues of STT-MRAM from Compact Modeling to Design Techniques

Failure and reliability analysis of STT-MRAM.

The fabrication of STT-MRAM memory cell with ultra-low switching power

Channel Modeling and Reliability Enhancement Design Techniques for STT-MRAM

Interfacial Perpendicular Magnetic Anisotropy in Sub-20 Nm Tunnel Junctions for Large-Capacity Spin-Transfer Torque Magnetic Random-Access Memory

Design Techniques to Improve the Device Write Margin for MRAM-based Cache Memory

Cross-Point Architecture for Spin-Transfer Torque Magnetic Random Access Memory