Abstract:Electronic-structure calculations play a fundamental role in predicting important physical (optical, electrical, etc) properties of condensed matter. Based on density functional theory (DFT), Kohn-Sham (KS) equation replaces the interacting many-body (electrons) problem by an equivalent set of self-consistent single-particle equations. Different from well-adopted basis set approach, we present a real-space finite-difference method to discretize the KS equation where the Laplacian operator is represented by high-order differences. After spatial discretization, a derived nonlinear eigenvalue problem is solved by a self-consistent field (SCF) iteration scheme with the update of electron density and potentials. In spite of the simplicity and versatility of the finite-difference method, one has to perform large-scale calculations of both eigenvalue and electrostatic problems at each iteration step. For eigenvalue problems, we minimize the Rayleigh quotients by the conjugate gradient method; and find minimum eigenvalues of interest through subspace diagonalization without Gram-Schmidt procedure. For obtaining electrostatic potentials, we use Dirichlet boundary condition to truncate the computational domain after inserting electron density and Gaussian compensating charge density together into Poisson's equation. Then a preconditioned Krylov subspace solver is employed to solve the Poisson's equation. A three-dimensional quantum dot with few spin-polarized electrons (each electron has spin up) is simulated by the real-space DFT incorporating local spin density (LSD) approximation. Wave function, electron density, eigen-energy, and total energy are calculated and compared to published results. The real-space finite-difference method produces reliable simulation results with a high computational efficiency. This work is fundamentally important to quantum-mechanical ab-initio calculation.

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Assessment of hole mobility in strained InSb, GaSb and InGaSb based ultra-thin body pMOSFETs with different surface orientations

Influence of Channel Length, Thickness, and Crystal Orientation in Ultra-Scaled Double-Gate Pmosfets

Self-Consistent Solution Of Kohn-Sham Equation By Real-Space Finite-Difference Method

A finite volume method for the multi subband Boltzmann equation with realistic 2D scattering in double gate MOSFETs

A Self-Consistent Simulation of Insb Double-Gate Mosfets Using Full-Band Tight-Binding Approach

Investigation of Hole Mobility in Strained InSb Ultrathin Body Pmosfets

Computationally Efficient Band Structure-Based Approach for Accurately Determining Electrostatics and Source-to-Drain Tunneling Current in UTB MOSFETs

Hole Mobility Enhancements In Strained Inxga1-Xsb Heterostructure P-Channel Mosfets

Monte Carlo Simulation Of Hole Non-Stationary Transports In Utb Soi Rpmosfet

Multi subband deterministic simulation of an ultra-thin double gate MOSFET with 2D electron gas

Hole mobility in InSb-based devices: Dependency on surface orientation, body thickness and strain

Quantitative Evaluation of Mobility Scattering Mechanisms in Ultra-Thin-Body Ge-OI pMOSFETs

Coulomb Scattering Induced Mobility Degradation in Ultrathin-body SOI MOSFETs with High-K Gate Stack

Revealing the Scattering Mechanisms of Mobility Degradation in Ultrathin Body SOI Pmosfets

Monte Carlo Simulation of Electron Transport in Silicon Carbide

Hole Mobility in the Ultra-Thin-body Junctionless Germanium-on-insulator P-Channel Metal-Oxide-semiconductor Field-Effect Transistors

A Finite Element Method with Energy-Adaptive Grids for the Coupled Schrödinger-Poisson-drift-diffusion Model

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Comprehensive Understanding of the Mobility Scattering Mechanisms and Evaluation of the Universal Mobility in Ultra-Thin-Body Ge-OI p- and n-MOSFETs

Quantum Mechanical Simulation of Electronic Transport in Nanostructured Devices by Efficient Self-consistent Pseudopotential Calculation