Subsurface Damage Distribution of Ground Silicon Wafers

Yan Debao,Qin Fei,Sun Jinglong,Wang Zhongkang,Tang Liang
DOI: https://doi.org/10.1109/icept.2014.6922786
2014-01-01
Abstract:The subsurface damage (SSD) distributions in different crystal orientations and radial locations of silicon wafers (100) are analyzed through cross-section microscopy method. The experimental results show that the subsurface damage depth is non-uniform in the ground wafer. Along the radial direction, the subsurface damage depth increases from the center to the edge of the wafer, and the depth in <;110> crystal orientation is larger than that in <;100> crystal orientation.
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