Abstract:Memristive devices are entering in our lives.They have started to be commercialized as non-volatile electronic memory, and despite their market size is still small, it is expected to increase up to 5.6 billion USD by 2026. [1]Moreover, recent investigations have shown that memristors hold great potential for applications in the fields of brain-inspired neuromorphic engineering, cryptography, and 5G/6G telecommunications. [2]This is surprising because such applications require figures-of-merit that are completely different and sometimes even opposite.For example, memristors used as non-volatile memory must exhibit very low variations of switching parameters to ensure a very high yield; [3] and, on the contrary, memristors for cryptography must exhibit very high and unpredictable variations of those same switching parameters. [4]he clue behind the versatility of memristors relies on the materials employed.Memristors are materials systems with two or three (sometimes even more) electrodes separated by an insulating or semiconducting material. [5]The use of different types of materials is a valuable tool allowing to adjust the electrical characteristics and figures-of-merit of the memristors.The reason is that different materials use different physical and chemical reactions to produce the resistance change, and those phenomena have associated different speed, energy, variability, and reliability.For example, one can find in the market memristive memories made of magnetic materials, phase-change materials, or metaloxide materials, all of them showing strengths and weaknesses, [1] as shown in Figure 1.Intense research in the field of memristors is highly necessary for two reasons.The first one is to optimize the properties of those memristors that exhibited potential for some applications.Many articles have claimed that memristors could be useful for diverse applications but bringing them to the market requires intense work to optimize not only performance, variability, and yield. [2][3 And the second reason is to discover new functionalities, not only in terms of electrical figures-ofmerit but also mechanical, optical, and thermal properties that could enable their use in different objects and environments.

New Materials for Memristive Switching

Reversible Transition of Volatile to Non-Volatile Resistive Switching in Cu/SiNx/ZnO/Pt Memristor

In-situ Study of Understanding the Resistive Switching Mechanisms of Nitride-based Memristor Devices

Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems

Engineering Oxide Resistive Switching Materials for Memristive Device Application

Tuning Analog Resistive Switching and Plasticity in Bilayer Transition Metal Oxide Based Memristive Synapses

Switching Layer Engineering for Memristive Devices

Nonvolatile Resistive Switching in Nanocrystalline Molybdenum Disulfide with Ion-Based Plasticity

Transition from synaptic simulation to nonvolatile resistive switching behavior based on an Ag/Ag:ZnO/Pt memristor.

Materials for Memristors

Memristor Based on Inorganic and Organic Two-Dimensional Materials: Mechanisms, Performance, and Synaptic Applications

High-Performance Resistive Switching in Solution-Derived IGZO:N Memristors by Microwave-Assisted Nitridation

Memristive Switching: Magneto‐Memristive Switching in a 2D Layer Antiferromagnet (Adv. Mater. 2/2020)

Memristive Switching Mechanism in Colloidal InP/ZnSe/ZnS Quantum Dot-Based Synaptic Devices for Neuromorphic Computing

MoS2-Based Memristor: Robust Resistive Switching Behavior and Reliable Biological Synapse Emulation

Controlled Memory and Threshold Switching Behaviors in a Heterogeneous Memristor for Neuromorphic Computing

Improved resistive switching performance and mechanism analysis of MoO 3 nanorods based memristors

Recent advancements in carbon-based materials for resistive switching applications

Novel 2D MXene-based materials in memristors: fundamentals, resistive switching properties and applications

Memristors Based on 2D Materials as an Artificial Synapse for Neuromorphic Electronics

Metal/TiO 2 Interfaces for Memristive Switches