High-performance Van Der Waals Antiferroelectric CuCrP2S6-based Memristors.
Yinchang Ma,Yuan Yan,Linqu Luo,Sebastian Pazos,Chenhui Zhang,Xiang Lv,Maolin Chen,Chen Liu,Yizhou Wang,Aitian Chen,Yan Li,Dongxing Zheng,Rongyu Lin,Hanin Algaidi,Minglei Sun,Jefferson Zhe Liu,Shaobo Tu,Husam N. Alshareef,Cheng Gong,Mario Lanza,Fei Xue,Xixiang Zhang
DOI: https://doi.org/10.1038/s41467-023-43628-x
IF: 16.6
2023-01-01
Nature Communications
Abstract:Abstract Layered thio- and seleno-phosphate ferroelectrics, such as CuInP2S6, are promising building blocks for next-generation nonvolatile memory devices. However, because of the low Curie point, the CuInP2S6-based memory devices suffer from poor thermal stability (<42 °C). Here, exploiting the electric field-driven phase transition in the rarely studied antiferroelectric CuCrP2S6 crystals, we develop a nonvolatile memristor showing a sizable resistive-switching ratio of ~ 1000, high switching endurance up to 20,000 cycles, low cycle-to-cycle variation, and robust thermal stability up to 120 °C. The resistive switching is attributed to the ferroelectric polarization-modulated thermal emission accompanied by the Fowler–Nordheim tunneling across the interfaces. First-principles calculations reveal that the good device performances are associated with the exceptionally strong ferroelectric polarization in CuCrP2S6 crystal. Furthermore, the typical biological synaptic learning rules, such as long-term potentiation/depression and spike amplitude/spike time-dependent plasticity, are also demonstrated. The results highlight the great application potential of van der Waals antiferroelectrics in high-performance synaptic devices for neuromorphic computing.