Abstract:Exquisite improvements are witnessed for MXene memristors. Conventional memory cells confront the demands of future data‐intensive computing applications. This sortation has led the research on constructing the memristors with novel 2D functional materials for advanced applications of next‐generation memory technology. MXene for high‐density computing and synapse functionality at low power (among all Ti3C2) with edge detection applicability are manifested. With the demand for low‐power‐operating artificial intelligence systems, bio‐inspired memristor devices exhibit potential in terms of high‐density memory functions and the emulation of the synaptic dynamics of the human brain. The 2D material MXene attracts considerable interest for use in resistive‐switching memory and artificial synapse devices owing to its excellent physicochemical properties in memristor devices. However, few memristive and synaptic MXene devices that display increased switching performances are reported, with no significant results. Herein, the conductivity of MXene (Ti3C2Tx) is engineered via etching and oxidation to enhance the switching performance of the device. The exceptional properties of partially oxidized MXene memristors include large memory windows and low threshold biases, and the complex spike‐timing‐dependent plasticity synaptic rules are also emulated. The low threshold potential distribution, reliable retention time (104 s), and distinct resistance states with a high ON–OFF ratio (>104) are the main memory‐related features of this device. The experimentally determined switching potentials of the optimized device are also uniformly distributed, according to a statistical probability‐based approach. This investigation may promote the essential material properties for use in high‐density non‐volatile memory storage and artificial synapse systems in the field of innovative nanoelectronic devices.

Novel 2D MXene-based materials in memristors: fundamentals, resistive switching properties and applications

Memristors with Tunable Characteristics Based on the Tellurene/nb-Doped MoS2 Heterojunction Toward Bio-Realistic Synaptic Emulation

A New Memristor with 2D Ti3 C2 Tx MXene Flakes As an Artificial Bio-Synapse.

Memristor Based on Inorganic and Organic Two-Dimensional Materials: Mechanisms, Performance, and Synaptic Applications

Recent advances in memristors based on two-dimensional ferroelectric materials

Metal–Organic Frameworks–Based Memristors: Materials, Devices, and Applications

Electronic and Photoelectronic Memristors Based on 2D Materials

Two-Dimensional Materials Based Memtransistors: Integration Strategies, Switching Mechanisms and Advanced Characterizations

MXenes for memristive and tactile sensory systems

Towards an universal artificial synapse using MXene-PZT based ferroelectric memristor

Facile synthesis of MXene−Polyvinyl alcohol hybrid material for robust flexible memristor

Surface Modification of a Titanium Carbide MXene Memristor to Enhance Memory Window and Low‐Power Operation

A review of memristor: material and structure design, device performance, applications and prospects

Emerging of two-dimensional materials in novel memristor

Recent Advances in Resistive Switching Materials and Devices: from Memories to Memristors

A novel nonvolatile memory device based on oxidized Ti3C2Tx MXene for neurocomputing application

Current Status and Prospects of Memristors Based on Novel 2D Materials

Inserted Effects of MXene on Switching Mechanisms and Characteristics of SiO 2 -Based Memristor: Experimental and First-Principles Investigations

MXene Quantum Dot/Polymer Hybrid Structures with Tunable Electrical Conductance and Resistive Switching for Nonvolatile Memory Devices

Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems

Solid-State Electrochemical Process and Performance Optimization of Memristive Materials and Devices