Abstract:Exquisite improvements are witnessed for MXene memristors. Conventional memory cells confront the demands of future data‐intensive computing applications. This sortation has led the research on constructing the memristors with novel 2D functional materials for advanced applications of next‐generation memory technology. MXene for high‐density computing and synapse functionality at low power (among all Ti3C2) with edge detection applicability are manifested. With the demand for low‐power‐operating artificial intelligence systems, bio‐inspired memristor devices exhibit potential in terms of high‐density memory functions and the emulation of the synaptic dynamics of the human brain. The 2D material MXene attracts considerable interest for use in resistive‐switching memory and artificial synapse devices owing to its excellent physicochemical properties in memristor devices. However, few memristive and synaptic MXene devices that display increased switching performances are reported, with no significant results. Herein, the conductivity of MXene (Ti3C2Tx) is engineered via etching and oxidation to enhance the switching performance of the device. The exceptional properties of partially oxidized MXene memristors include large memory windows and low threshold biases, and the complex spike‐timing‐dependent plasticity synaptic rules are also emulated. The low threshold potential distribution, reliable retention time (104 s), and distinct resistance states with a high ON–OFF ratio (>104) are the main memory‐related features of this device. The experimentally determined switching potentials of the optimized device are also uniformly distributed, according to a statistical probability‐based approach. This investigation may promote the essential material properties for use in high‐density non‐volatile memory storage and artificial synapse systems in the field of innovative nanoelectronic devices.

A novel nonvolatile memory device based on oxidized Ti3C2Tx MXene for neurocomputing application

A New Memristor with 2D Ti3 C2 Tx MXene Flakes As an Artificial Bio-Synapse.

Surface Modification of a Titanium Carbide MXene Memristor to Enhance Memory Window and Low‐Power Operation

Surface Functionalization of Single-Layered Ti3C2Tx MXene and Its Application in Multilevel Resistive Memory.

MXene Hybrid Nanocomposites Enable High Performance Memory Devices and Artificial Synapse Applications

Facile Synthesis of Ti3C2Tx-Poly(vinylpyrrolidone) Nanocomposites for Nonvolatile Memory Devices with Low Switching Voltage.

Towards an universal artificial synapse using MXene-PZT based ferroelectric memristor

Monolayer Vacancy‐Induced MXene Memory for Write‐Verify‐Free Programming

Facile synthesis of MXene−Polyvinyl alcohol hybrid material for robust flexible memristor

Novel 2D MXene-based materials in memristors: fundamentals, resistive switching properties and applications

Electrical performance study of carbon-based memristor with additional MXene capping layer

High-speed ionic synaptic memory based on two-dimensional titanium carbide MXene

Electrical-Light Coordinately Modulated Synaptic Memristor Based on Ti3C2 MXene for Near-Infrared Artificial Vision Applications

Synaptic Plasticity Realized by Selective Oxidation of TiS3 Nanosheet for Neuromorphic Devices.

Synaptic Memory Devices from CoO/Nb:SrTiO3 Junction.

An artificial synaptic thin-film transistor based on 2D MXene–TiO2

Ferroelectric MXene-assisted BiFeO 3 based free-standing memristors for multifunctional non-volatile memory storage

TaOx Based Memristors with Recessed Bottom Electrodes and Built-in Ion Concentration Gradient As Electronic Synapses

Electrical-Light Coordinately Modulated Synaptic Memristor Based on Ti 3 C 2 MXene for Near-Infrared Artificial Vision Applications

Inserted Effects of MXene on Switching Mechanisms and Characteristics of SiO 2 -Based Memristor: Experimental and First-Principles Investigations

Exploration of threshold and resistive-switching behaviors in MXene/BaFe12O19 ferroelectric memristors